APTGT100DH60TG Asymmetrical - Bridge Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 100A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control VBUS VBUS SENSE Q1 G1 CR3 E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBU S SENSE NTC1 0/VBU S NTC2 Features Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 150 100 200 ±20 340 Tj = 150°C 200A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGT100DH60TG – Rev 2 October, 2012 Symbol VCES APTGT100DH60TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V 5.0 Typ 1.5 1.7 5.8 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3 VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 100A Tj = 25°C RG = 3.3 Tj = 150°C Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Min Typ 6100 390 190 115 45 225 pF ns 55 130 50 ns 300 70 0.4 0.875 2.5 3.5 mJ mJ Diode ratings and characteristics IRM IF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy IF = 100A VGE = 0V IF = 100A VR = 300V di/dt =2000A/µs www.microsemi.com Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 100 1.6 1.5 125 220 4.7 Tj = 150°C Tj = 25°C 9.9 1.1 Tj = 150°C 2.4 Max 250 500 Unit V µA A 2 V ns µC mJ 2-6 APTGT100DH60TG – Rev 2 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT100DH60TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K RT Min Typ 50 3952 Max Unit k K Min Typ Max 0.44 0.77 Unit R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 4000 -40 -40 -40 2.5 °C/W V 175 125 100 4.7 160 °C N.m g ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT100DH60TG – Rev 2 October, 2012 SP4 Package outline (dimensions in mm) APTGT100DH60TG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 200 200 TJ=25°C 175 TJ=150°C 125 IC (A) IC (A) 150 TJ=125°C 150 100 50 50 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 7 175 1 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 3.3Ω TJ = 150°C 6 TJ=25°C 150 5 E (mJ) 125 100 TJ=125°C 75 0.5 TJ=150°C TJ=25°C 4 Er 3 5 6 7 Eon 0 0 8 9 10 11 0 12 25 50 75 100 125 150 175 200 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 250 VCE = 300V VGE =15V IC = 100A TJ = 150°C 200 Eoff Eon IF (A) E (mJ) 3.5 Eoff 1 25 6 3 2 50 8 2.5 Energy losses vs Collector Current Transfert Characteristics 200 IC (A) VGE=9V 25 TJ=25°C 0 VGE=15V 100 75 0 VGE=13V 125 75 25 VGE=19V TJ = 150°C 175 4 150 100 2 Er VGE=15V TJ=150°C RG=3.3Ω 50 Eon 0 0 0 5 10 15 20 25 Gate Resistance (ohms) 30 0 100 200 300 400 VCE (V) 500 600 700 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 IGBT 0.9 0.7 0.3 0.5 0.2 0.1 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-6 APTGT100DH60TG – Rev 2 October, 2012 Thermal Impedance (°C/W) 0.5 APTGT100DH60TG Forward Characteristic of diode 200 VCE=300V D=50% RG=3.3Ω TJ=150°C 100 ZCS 80 150 125 Tc=85°C ZVS 60 175 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 100 TJ=125°C 75 40 TJ=150°C 50 Hard switching 20 25 TJ=25°C 0 0 0 25 50 75 100 125 0 150 0.4 IC (A) 0.8 1.2 1.6 VF (V) 2 2.4 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.9 Diode 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-6 APTGT100DH60TG – Rev 2 October, 2012 Thermal Impedance (°C/W) 0.8 APTGT100DH60TG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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