APTGL40H120T1G Full bridge Trench + Field Stop IGBT4 Power Module 3 4 Q3 Q1 CR1 CR3 2 5 6 1 Q4 Q2 CR2 CR4 9 7 8 11 10 NTC 12 VCES = 1200V IC = 40A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Low tail current - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Pins 3/4 must be shorted together Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 65 40 70 ±20 220 Tj = 150°C 70A @ 1100V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGL40H120T1G – Rev 1 October, 2012 Symbol VCES APTGL40H120T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Test Conditions Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 35A Tj = 150°C VGE = VCE , IC = 1.2mA VGE = 20V, VCE = 0V Min Typ 5.0 1.85 2.25 5.8 Min Typ Max Unit 250 2.25 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=35A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 35A RG = 12 Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 35A RG = 12 TJ = 25°C VGE = ±15V VCE = 600V TJ = 150°C IC = 35A TJ = 25°C RG = 12 TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Rise Time Turn-off Delay Time Fall Time Td(off) Tf Test Conditions Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data 1950 155 115 pF 0.27 µC 130 20 300 ns 45 150 35 350 80 2.6 4 2 3 ns mJ mJ 140 A Reverse diode ratings and characteristics VRRM IRM IF VF Test Conditions Min VR=1200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ IF = 30A VR = 800V di/dt =200A/µs www.microsemi.com V Tj = 25°C Tj = 150°C Tc = 80°C IF = 30A IF = 60A IF = 30A Unit 100 500 Tj = 125°C Tj = 25°C 30 2.6 3.2 1.8 300 Tj = 125°C Tj = 25°C Tj = 125°C 380 360 1700 µA A 3.1 V ns nC 2-6 APTGL40H120T1G – Rev 1 October, 2012 Symbol Characteristic APTGL40H120T1G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min Typ 50 5 3952 4 Max Unit k % K % Min Typ Max 0.68 1.2 Unit T25 = 298.15 K TC=100°C RT R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 4000 -40 -40 -40 2 °C/W V 175 125 100 3 80 °C N.m g See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGL40H120T1G – Rev 1 October, 2012 SP1 Package outline (dimensions in mm) APTGL40H120T1G Typical Performance Curve Output Characteristics (VGE=15V) 70 Output Characteristics 70 60 TJ=25°C VGE=19V 50 TJ=150°C 40 IC (A) IC (A) 50 30 VGE=15V 40 30 20 20 10 10 0 VGE=9V 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 70 E (mJ) 8 40 30 TJ=150°C 4 Eon Eoff 2 10 0 0 5 6 7 8 9 10 11 12 0 13 10 20 30 40 50 60 70 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 10 80 70 VCE = 600V VGE =15V IC = 35A TJ = 150°C 6 Eon 60 IC (A) 8 E (mJ) 3 6 4 20 2 VCE (V) VCE = 600V VGE = 15V RG =12 Ω TJ = 150°C 10 50 1 Energy losses vs Collector Current 12 TJ=25°C 60 IC (A) TJ = 150°C 60 Eoff 4 50 40 30 VGE=15V TJ=150°C RG=12 Ω 20 2 10 0 0 0 10 20 30 40 Gate Resistance (ohms) 50 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.9 IGBT 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTGL40H120T1G – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.7 APTGL40H120T1G Forward Characteristic of diode VCE=600V D=50% RG=12 Ω TJ=150°C Tc=75°C ZVS 120 80 70 60 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 160 80 TJ=125°C 50 40 30 40 Hard switching 10 0 0 0 10 TJ=25°C 20 ZCS 20 30 40 IC (A) 50 60 0.0 70 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.8 Diode 0.9 0.7 0.5 0.6 0.4 0.2 0 0.00001 0.3 Single Pulse 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-6 APTGL40H120T1G – Rev 1 October, 2012 Thermal Impedance (°C/W) 1.4 APTGL40H120T1G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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