APTGL60H120T3G Full bridge Trench + Field Stop IGBT4 Power module VCES = 1200V IC = 60A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring 20 19 18 23 22 16 30 15 31 14 13 32 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Easy paralleling due to positive TC of VCEsat Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS compliant TC = 25°C Max ratings 1200 80 60 100 ±20 280 Tj = 150°C 100A @ 1100V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGL60H120T3G – Rev 1 October, 2012 28 27 26 25 29 APTGL60H120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 50A Tj = 150°C VGE = VCE , IC = 1.6mA VGE = 20V, VCE = 0V Min Typ 5.0 1.85 2.25 5.8 Min Typ Max Unit 250 2.25 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Rise Time Turn-off Delay Time Fall Time Td(off) Tf Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=50A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2 Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 50A RG = 8.2 TJ = 25°C VGE = ±15V VCE = 600V TJ = 150°C IC = 50A TJ = 25°C RG = 8.2 TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 2770 205 160 pF 0.38 µC 130 20 300 ns 45 150 35 350 80 3.8 5.5 2.5 4.5 ns mJ mJ 200 A Reverse diode ratings and characteristics IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions VR=1200V IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/µs Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 Tj = 125°C 60 2.5 3 1.8 Tj = 25°C 265 Tj = 125°C Tj = 25°C Tj = 125°C 350 560 2890 www.microsemi.com Max Unit V µA A 3 V ns nC 2-6 APTGL60H120T3G – Rev 1 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGL60H120T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 4000 -40 -40 -40 2 Max 0.53 0.9 Unit °C/W V 175 125 100 3 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T T 25 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGL60H120T3G – Rev 1 October, 2012 SP3 Package outline (dimensions in mm) APTGL60H120T3G Typical Performance Curve Output Characteristics (VGE=15V) 100 Output Characteristics 100 TJ = 150°C 80 TJ=25°C 60 VGE=19V 60 TJ=150°C IC (A) IC (A) 80 40 20 VGE=15V 40 VGE=9V 20 0 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 100 VCE = 600V VGE = 15V RG = 8.2 Ω TJ = 150°C 60 12 E (mJ) IC (A) TJ=25°C 16 40 3 4 Eon 8 Eoff TJ=150°C 4 0 0 5 6 7 8 9 10 11 12 0 13 20 40 60 80 100 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 12 120 100 10 VCE = 600V VGE =15V IC = 50A TJ = 150°C 8 6 80 IC (A) Eon E (mJ) 2 VCE (V) Energy losses vs Collector Current 20 80 20 1 Eoff 60 40 4 VGE=15V TJ=150°C RG=8.2 Ω 20 2 0 0 10 20 30 Gate Resistance (ohms) 0 40 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 IGBT Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTGL60H120T3G – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.6 APTGL60H120T3G Forward Characteristic of diode 140 VCE=600V D=50% RG=8.2 Ω TJ=150°C Tc=75°C ZCS 100 75 50 IF, Forward Current (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 125 ZVS 25 Hard switching TJ=125°C 120 100 80 TJ=25°C 60 40 20 0 0 10 20 30 40 50 60 IC (A) 70 80 90 0 0.5 1 1.5 2 2.5 3 3.5 VF, Anode to Cathode Voltage (V) 1 0.8 0.9 DIODE 0.7 0.6 0.4 0.2 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration in Seconds www.microsemi.com 1 10 5-6 APTGL60H120T3G – Rev 1 October, 2012 Thermal Impedance (°C/W) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration APTGL60H120T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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