APTGT35X120T3G 3 Phase bridge Trench + Field Stop IGBT3 Power Module 15 VCES = 1200V IC = 35A @ Tc = 80°C Application Motor control 31 16 19 20 23 29 25 30 18 11 10 14 22 8 4 7 3 28 R1 13 12 2 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together. 28 27 26 25 Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 Features Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring 10 11 12 Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 55 35 70 ±20 208 Tj = 125°C [email protected] TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGT35X120T3G – Rev 1 October, 2012 Symbol VCES APTGT35X120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min Tj = 25°C Tj = 125°C Tj = 25°C VGE = 15V IC = 35A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Typ VGE = 0V VCE = 1200V 5.0 1.7 2.0 5.8 Max 250 500 2.1 Unit µA V 6.5 400 V nA Max Unit Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 35A RG = 27 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 35A RG = 27 VGE = ±15V VBus = 600V Tj = 125°C IC = 35A RG = 27 Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 2.5 0.15 90 30 420 nF ns 70 90 50 ns 520 90 3.5 mJ 4.1 Reverse diode ratings and characteristics VRRM IRM IF VF Test Conditions Min Maximum Reverse Leakage Current VR=1200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ Max 1200 Maximum Peak Repetitive Reverse Voltage IF = 30A VR = 800V di/dt =200A/µs www.microsemi.com V Tj = 25°C Tj = 150°C Tc = 80°C IF = 30A IF = 60A IF = 30A Unit 100 500 Tj = 125°C Tj = 25°C 30 2.6 3.2 1.8 300 Tj = 125°C Tj = 25°C Tj = 125°C 380 360 1700 µA A 3.1 V ns nC 2-6 APTGT35X120T3G – Rev 1 October, 2012 Symbol Characteristic APTGT35X120T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K RT Min Typ 50 3952 Max Unit k K Min Typ Max 0.6 1.2 Unit R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 4000 -40 -40 -40 2 °C/W V 150 125 100 3 110 °C N.m g See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT35X120T3G – Rev 1 October, 2012 SP3 Package outline (dimensions in mm) APTGT35X120T3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 70 80 70 50 TJ=125°C 40 30 VGE=15V 40 30 VGE=9V 10 10 0 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 0 3.5 8 TJ=25°C 60 50 1 VCE = 600V VGE = 15V RG = 27Ω TJ = 125°C 7 6 E (mJ) TJ=125°C 40 30 5 2 1 Eoff Eon 0 0 5 6 7 8 9 10 11 0 12 10 20 30 40 50 60 70 80 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 80 VCE = 600V VGE =15V IC = 35A TJ = 125°C 70 Eon 60 5 IC (A) 6 4 3 10 7 3 4 20 8 2 VCE (V) Energy losses vs Collector Current Transfert Characteristics 70 E (mJ) VGE=13V 20 20 IC (A) VGE=17V 50 IC (A) IC (A) 60 TJ = 125°C 60 TJ=25°C Eoff 50 40 30 4 VGE=15V TJ=125°C RG=27Ω 20 3 10 2 0 25 45 65 85 Gate Resistance (ohms) 105 0 400 800 VCE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTGT35X120T3G – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.7 APTGT35X120T3G Forward Characteristic of diode 80 VCE=600V D=50% RG=27Ω TJ=125°C TC=75°C 30 20 70 60 40 30 hard switching 10 TJ=125°C 50 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 40 TJ=25°C 20 10 0 0 0 10 20 30 40 0 50 1 IC (A) 2 VF (V) 3 4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 Diode 0.9 0.7 0.8 0.6 0.4 0.2 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-6 APTGT35X120T3G – Rev 1 October, 2012 Thermal Impedance (°C/W) 1.4 APTGT35X120T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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