APTGT35X120T3G-Rev1.pdf

APTGT35X120T3G
3 Phase bridge
Trench + Field Stop IGBT3
Power Module
15
VCES = 1200V
IC = 35A @ Tc = 80°C
Application
 Motor control
31
16
19
20
23
29
25
30
18
11
10
14
22
8
4
7
3
28
R1
13
12
2
It is recommended to connect a decoupling capacitor
between pins 31 & 2 to reduce switching overvoltages, if DC
Power is connected between pins 15, 16 & 12.
Pins 15 & 16 must be shorted together.
28 27 26 25
Benefits
 Outstanding performance at high frequency
operation
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Solderable terminals both for power and signal
for easy PCB mounting
 Low profile
 RoHS compliant
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
Features
 Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
 Kelvin emitter for easy drive
 Very low stray inductance
 High level of integration
 Internal thermistor for temperature monitoring
10 11 12
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
55
35
70
±20
208
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-6
APTGT35X120T3G – Rev 1 October, 2012
Symbol
VCES
APTGT35X120T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
Tj = 25°C
Tj = 125°C
Tj = 25°C
VGE = 15V
IC = 35A
Tj = 125°C
VGE = VCE , IC = 1.5mA
VGE = 20V, VCE = 0V
Typ
VGE = 0V
VCE = 1200V
5.0
1.7
2.0
5.8
Max
250
500
2.1
Unit
µA
V
6.5
400
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Cies
Cres
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 35A
RG = 27
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 35A
RG = 27
VGE = ±15V
VBus = 600V
Tj = 125°C
IC = 35A
RG = 27
Fall Time
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
2.5
0.15
90
30
420
nF
ns
70
90
50
ns
520
90
3.5
mJ
4.1
Reverse diode ratings and characteristics
VRRM
IRM
IF
VF
Test Conditions
Min
Maximum Reverse Leakage Current
VR=1200V
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Typ
Max
1200
Maximum Peak Repetitive Reverse Voltage
IF = 30A
VR = 800V
di/dt =200A/µs
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V
Tj = 25°C
Tj = 150°C
Tc = 80°C
IF = 30A
IF = 60A
IF = 30A
Unit
100
500
Tj = 125°C
Tj = 25°C
30
2.6
3.2
1.8
300
Tj = 125°C
Tj = 25°C
Tj = 125°C
380
360
1700
µA
A
3.1
V
ns
nC
2-6
APTGT35X120T3G – Rev 1 October, 2012
Symbol Characteristic
APTGT35X120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Resistance @ 25°C
R25
B 25/85 T25 = 298.15 K
RT 
Min
Typ
50
3952
Max
Unit
k
K
Min
Typ
Max
0.6
1.2
Unit
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T
 
exp  B25 / 85 
 T25 T 

Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
4000
-40
-40
-40
2
°C/W
V
150
125
100
3
110
°C
N.m
g
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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3-6
APTGT35X120T3G – Rev 1 October, 2012
SP3 Package outline (dimensions in mm)
APTGT35X120T3G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
70
80
70
50
TJ=125°C
40
30
VGE=15V
40
30
VGE=9V
10
10
0
0
0
0.5
1
1.5
2
VCE (V)
2.5
3
0
3.5
8
TJ=25°C
60
50
1
VCE = 600V
VGE = 15V
RG = 27Ω
TJ = 125°C
7
6
E (mJ)
TJ=125°C
40
30
5
2
1
Eoff
Eon
0
0
5
6
7
8
9
10
11
0
12
10
20
30
40
50
60
70
80
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
80
VCE = 600V
VGE =15V
IC = 35A
TJ = 125°C
70
Eon
60
5
IC (A)
6
4
3
10
7
3
4
20
8
2
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
70
E (mJ)
VGE=13V
20
20
IC (A)
VGE=17V
50
IC (A)
IC (A)
60
TJ = 125°C
60
TJ=25°C
Eoff
50
40
30
4
VGE=15V
TJ=125°C
RG=27Ω
20
3
10
2
0
25
45
65
85
Gate Resistance (ohms)
105
0
400
800
VCE (V)
1200
1600
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5
0.4
0.3
0.2
0.1
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-6
APTGT35X120T3G – Rev 1 October, 2012
Thermal Impedance (°C/W)
0.7
APTGT35X120T3G
Forward Characteristic of diode
80
VCE=600V
D=50%
RG=27Ω
TJ=125°C
TC=75°C
30
20
70
60
40
30
hard
switching
10
TJ=125°C
50
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
40
TJ=25°C
20
10
0
0
0
10
20
30
40
0
50
1
IC (A)
2
VF (V)
3
4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.2
1
Diode
0.9
0.7
0.8
0.6
0.4
0.2
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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5-6
APTGT35X120T3G – Rev 1 October, 2012
Thermal Impedance (°C/W)
1.4
APTGT35X120T3G
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6-6
APTGT35X120T3G – Rev 1 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.