APTGT150DA60T1G Boost chopper Trench + Field Stop IGBT3 Power Module 5 6 VCES = 600V IC = 150A* @ Tc = 80°C Application 11 CR1 Features 3 4 NTC Q2 CR2 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction 12 Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits Pins 1/2 ; 3/4 ; 5/6 must be shorted together Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C TC = 80°C TC = 25°C TC = 25°C Reverse Bias Safe Operating Area Tj = 150°C Max ratings 600 225 * 150 * 350 ±20 480 Unit V A V W 300A @ 550V Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTGT150DA60T1G – Rev 1 October, 2012 Symbol VCES APTGT150DA60T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 150A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V 5.0 Typ 1.5 1.7 5.8 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 150A RG = 3.3 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 150A RG = 3.3 Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn on Energy Eoff Turn off Energy Min VGE = ±15V VBus = 300V IC = 150A RG = 3.3 Typ 9200 580 270 115 45 225 pF ns 55 130 50 ns 300 70 0.85 1.5 4.1 5.3 Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C mJ mJ Chopper diode ratings and characteristics IRM IF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy IF = 150A VGE = 0V IF = 150A VR = 300V di/dt =3000A/µs www.microsemi.com Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 150 1.6 1.5 130 225 6.9 Tj = 150°C Tj = 25°C Tj = 150°C 14.5 1.6 3.5 Max 250 500 Unit V µA A 2 V ns µC mJ 2–6 APTGT150DA60T1G – Rev 1 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT150DA60T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 4000 -40 -40 -40 2 Max 0.31 0.52 Unit °C/W V 175 125 100 3 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT Min Typ 50 3952 Max Unit k K R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTGT150DA60T1G – Rev 1 October, 2012 SP1 Package outline (dimensions in mm) APTGT150DA60T1G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 300 300 TJ=25°C TJ = 150°C VGE=19V 250 250 150 VGE=15V 150 100 100 50 50 VGE=9V TJ=25°C 0 0 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 10 TJ=25°C 250 E (mJ) 150 TJ=125°C TJ=25°C 6 7 Er 4 8 9 0 10 11 0 12 50 100 200 250 300 Reverse Bias Safe Operating Area Eon 300 Eoff Eoff 250 IF (A) E (mJ) 150 IC (A) 350 VCE = 300V VGE =15V IC = 150A TJ = 150°C 8 3.5 6 Switching Energy Losses vs Gate Resistance 10 3 Eoff VGE (V) 12 2.5 2 0 5 1.5 2 VCE (V) Eon TJ=150°C 50 1 VCE = 300V VGE = 15V RG = 3.3Ω TJ = 150°C 8 200 100 0.5 Energy losses vs Collector Current Transfert Characteristics 300 IC (A) VGE=13V 200 TJ=150°C IC (A) IC (A) TJ=125°C 200 6 4 150 100 Er 2 200 VGE=15V TJ=150°C RG=3.3Ω 50 Eon 0 0 0 5 10 15 20 Gate Resistance (ohms) 25 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.9 0.25 0.7 0.2 0.15 0.1 0.05 IGBT 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4–6 APTGT150DA60T1G – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.35 APTGT150DA60T1G Forward Characteristic of diode 300 100 ZCS 80 VCE=300V D=50% RG=3.3Ω TJ=150°C ZVS 250 200 Tc=85°C IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 60 150 TJ=125°C 100 40 Hard switching 20 TJ=150°C 50 TJ=25°C 0 0 0 50 100 IC (A) 150 0 200 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Diode Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5–6 APTGT150DA60T1G – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.6 APTGT150DA60T1G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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