APTGT50X60T3G 3 Phase bridge Trench + Field Stop IGBT3 Power Module 15 VCES = 600V IC = 50A* @ Tc = 80°C Application Motor control 31 16 19 20 23 29 25 30 18 11 10 14 22 8 4 7 3 28 R1 13 12 2 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together. 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 Features Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Absolute maximum ratings IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 80* 50* 100 ±20 176 100A @ 550V Unit V A V W * Specification of IGBT device but output current must be limited to 40A at Tc=80°C and 65A at Tc=25°C not to exceed a connectors temperature greater than 120°C. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGT50X60T3G – Rev 1 October, 2012 Symbol VCES APTGT50X60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Test Conditions Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 3150 200 95 Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 50A Tj = 25°C RG = 8.2 Tj = 150°C 110 45 200 Tf Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy pF ns 40 120 50 250 ns 60 0.3 0.43 1.35 1.75 mJ mJ Reverse diode ratings and characteristics VRRM IRM Test Conditions Min IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Max 600 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ V VR=600V Tj = 25°C Tj = 150°C IF = 50A VGE = 0V Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C 50 1.6 1.5 100 Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C 150 2.6 5.4 0.6 1.2 IF = 50A VR = 300V di/dt =1800A/µs www.microsemi.com Unit 250 500 µA A 2 V ns µC mJ 2-6 APTGT50X60T3G – Rev 1 October, 2012 Symbol Characteristic APTGT50X60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K RT Min Typ 50 3952 Max Unit k K Min Typ Max 0.85 1.42 Unit R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 4000 -40 -40 -40 2 °C/W V 175 125 100 3 110 °C N.m g See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT50X60T3G – Rev 1 October, 2012 SP3 Package outline (dimensions in mm) APTGT50X60T3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ=25°C TJ=125°C 60 VGE=15V 40 40 20 20 TJ=25°C 0 0 0.5 1 1.5 VCE (V) VGE=9V 0 2 2.5 0 3 3.5 60 E (mJ) IC (A) 2.5 40 1 1.5 2 VCE (V) 2.5 VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 3 TJ=25°C 80 0.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 100 VGE=19V VGE=13V TJ=150°C 60 IC (A) IC (A) 80 TJ = 150°C 80 TJ=125°C Eoff 2 Er 1.5 1 TJ=150°C 20 0 0 5 6 7 Eon 0.5 TJ=25°C 8 9 10 11 0 12 20 40 Switching Energy Losses vs Gate Resistance 3 VCE = 300V VGE =15V IC = 50A TJ = 150°C 2.5 80 100 Reverse Bias Safe Operating Area 125 Eoff 100 Eon IC (A) E (mJ) 2 60 IC (A) VGE (V) 1.5 75 50 1 Er 0.5 VGE=15V TJ=150°C RG=8.2Ω 25 Eon 0 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 0.6 IGBT 0.9 0.7 0.5 0.4 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-6 APTGT50X60T3G – Rev 1 October, 2012 Thermal Impedance (°C/W) 1 APTGT50X60T3G Forward Characteristic of diode 100 70 80 VCE=300V D=50% RG=8.2Ω TJ=150°C 60 50 40 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 80 Tc=85°C 30 TJ=125°C 40 TJ=150°C Hard switching 20 60 20 10 TJ=25°C 0 0 0 20 40 IC (A) 60 0 80 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 1.2 1 0.7 0.8 0.5 0.6 0.3 0.4 0.2 Diode 0.9 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-6 APTGT50X60T3G – Rev 1 October, 2012 Thermal Impedance (°C/W) 1.6 APTGT50X60T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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