APTGT750U60D4G Single switch Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 750A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control 1 3 Features Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated 5 2 Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 600 1000 750 1000 ±20 2300 Tj = 125°C 1600A@550V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGT750U60D4G – Rev 1 October 2012 Symbol VCES APTGT750U60D4G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Test Conditions Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, VCE = 600V Tj = 25°C VGE = 15V IC = 800A Tj = 125°C VGE = VCE , IC = 13mA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Max Unit 1 1.9 mA 6.5 3100 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=-8/+15V, IC=800A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 800A RG = 2 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 800A RG = 2 VGE = ±15V Tj = 150°C VBus = 300V IC = 800A Tj = 150°C RG = 2 VGE ≤15V ; VBus = 360V tp = 6µs ; Tj = 150°C Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Min Typ 49 3.1 1.5 nF 5.8 µC 250 70 550 ns 70 270 80 650 ns 80 10 mJ 40 4000 A Reverse diode ratings and characteristics IRRM IF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 800A VGE = 0V IF = 800A VR = 300V di/dt =5000A/µs Err Reverse Recovery Energy www.microsemi.com Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 800 1.6 1.5 150 250 36 76 9.2 Tj = 150°C 19 Max 750 1000 Unit V µA A 2.1 V ns µC mJ 2-6 APTGT750U60D4G – Rev 1 October 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT750U60D4G Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz IGBT Diode Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight M6 M4 4000 -40 -40 -40 3 1 Typ Max 0.065 0.11 Unit °C/W V 175 125 125 5 2 350 °C N.m g www.microsemi.com 3-6 APTGT750U60D4G – Rev 1 October 2012 D4 Package outline (dimensions in mm) APTGT750U60D4G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 1600 1600 TJ=25°C TJ = 150°C 1200 TJ=150°C IC (A) IC (A) 1200 800 VGE=15V 800 TJ=25°C 0 0 0.5 VGE=9V 1 1.5 VCE (V) 0 2 2.5 0 3 60 1 1.5 2 VCE (V) 2.5 VCE = 300V VGE = 15V RG = 2Ω TJ = 150°C TJ=25°C 1200 800 TJ=125°C Err Eon TJ=25°C 0 0 6 7 8 9 10 11 0 12 200 Switching Energy Losses vs Gate Resistance 60 800 1000 1200 Reverse Bias Safe Operating Area 1600 Eon IF (A) 80 600 2000 VCE = 300V VGE =15V IC = 800A TJ = 150°C 100 400 IC (A) VGE (V) 120 3.5 20 TJ=150°C 5 3 Eoff E (mJ) 40 400 0.5 Energy losses vs Collector Current Transfert Characteristics 1600 IC (A) VGE=13V 400 400 E (mJ) VGE=19V Eoff 1200 800 40 20 Eon VGE=15V TJ=150°C RG=2Ω 400 Err 0 0 0 2.5 5 7.5 10 Gate Resistance (ohms) 12.5 0 100 200 300 400 500 600 700 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.06 0.9 0.7 0.04 0.5 0.3 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-6 APTGT750U60D4G – Rev 1 October 2012 Thermal Impedance (°C/W) 0.08 APTGT750U60D4G Forward Characteristic of diode 1200 40 ZCS 30 1000 800 Tc=85°C ZVS 20 10 VCE=300V D=50% RG=2Ω TJ=150°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 50 600 TJ=150°C 400 Hard switching TJ=25°C 200 0 0 200 400 600 IC (A) 800 0 1000 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 0.08 0.06 0.04 0.02 Diode 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-6 APTGT750U60D4G – Rev 1 October 2012 Thermal Impedance (°C/W) 0.12 APTGT750U60D4G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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