APTGT750U60D4G-Rev1.pdf

APTGT750U60D4G
Single switch
Trench + Field Stop IGBT3
Power Module
VCES = 600V
IC = 750A @ Tc = 80°C
Application
 Welding converters
 Switched Mode Power Supplies
 Uninterruptible Power Supplies
 Motor control
1
3
Features
 Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
5
2




Kelvin emitter for easy drive
M6 connectors for power
M4 connectors for signal
High level of integration
Benefits
 Stable temperature behavior
 Very rugged
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Easy paralleling due to positive TC of VCEsat
 RoHS Compliant
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
TC = 25°C
Max ratings
600
1000
750
1000
±20
2300
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Reverse Bias Safe Operating Area
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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1-6
APTGT750U60D4G – Rev 1 October 2012
Symbol
VCES
APTGT750U60D4G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Test Conditions
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
VGE = 0V, VCE = 600V
Tj = 25°C
VGE = 15V
IC = 800A
Tj = 125°C
VGE = VCE , IC = 13mA
VGE = 20V, VCE = 0V
Min
Typ
5.0
1.5
1.7
5.8
Max
Unit
1
1.9
mA
6.5
3100
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
QG
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE=-8/+15V, IC=800A
VCE=300V
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 800A
RG = 2
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 800A
RG = 2
VGE = ±15V
Tj = 150°C
VBus = 300V
IC = 800A
Tj = 150°C
RG = 2
VGE ≤15V ; VBus = 360V
tp = 6µs ; Tj = 150°C
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Isc
Short Circuit data
Min
Typ
49
3.1
1.5
nF
5.8
µC
250
70
550
ns
70
270
80
650
ns
80
10
mJ
40
4000
A
Reverse diode ratings and characteristics
IRRM
IF
Maximum Reverse Leakage Current
Test Conditions
VR=600V
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 800A
VGE = 0V
IF = 800A
VR = 300V
di/dt =5000A/µs
Err
Reverse Recovery Energy
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Min
600
Typ
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
800
1.6
1.5
150
250
36
76
9.2
Tj = 150°C
19
Max
750
1000
Unit
V
µA
A
2.1
V
ns
µC
mJ
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APTGT750U60D4G – Rev 1 October 2012
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTGT750U60D4G
Thermal and package characteristics
Symbol Characteristic
Min
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
IGBT
Diode
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
M6
M4
4000
-40
-40
-40
3
1
Typ
Max
0.065
0.11
Unit
°C/W
V
175
125
125
5
2
350
°C
N.m
g
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3-6
APTGT750U60D4G – Rev 1 October 2012
D4 Package outline (dimensions in mm)
APTGT750U60D4G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
1600
1600
TJ=25°C
TJ = 150°C
1200
TJ=150°C
IC (A)
IC (A)
1200
800
VGE=15V
800
TJ=25°C
0
0
0.5
VGE=9V
1
1.5
VCE (V)
0
2
2.5
0
3
60
1
1.5
2
VCE (V)
2.5
VCE = 300V
VGE = 15V
RG = 2Ω
TJ = 150°C
TJ=25°C
1200
800
TJ=125°C
Err
Eon
TJ=25°C
0
0
6
7
8
9
10
11
0
12
200
Switching Energy Losses vs Gate Resistance
60
800
1000 1200
Reverse Bias Safe Operating Area
1600
Eon
IF (A)
80
600
2000
VCE = 300V
VGE =15V
IC = 800A
TJ = 150°C
100
400
IC (A)
VGE (V)
120
3.5
20
TJ=150°C
5
3
Eoff
E (mJ)
40
400
0.5
Energy losses vs Collector Current
Transfert Characteristics
1600
IC (A)
VGE=13V
400
400
E (mJ)
VGE=19V
Eoff
1200
800
40
20
Eon
VGE=15V
TJ=150°C
RG=2Ω
400
Err
0
0
0
2.5
5
7.5
10
Gate Resistance (ohms)
12.5
0
100 200 300 400 500 600 700
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
IGBT
0.06
0.9
0.7
0.04
0.5
0.3
0.02
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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4-6
APTGT750U60D4G – Rev 1 October 2012
Thermal Impedance (°C/W)
0.08
APTGT750U60D4G
Forward Characteristic of diode
1200
40
ZCS
30
1000
800
Tc=85°C
ZVS
20
10
VCE=300V
D=50%
RG=2Ω
TJ=150°C
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
50
600
TJ=150°C
400
Hard
switching
TJ=25°C
200
0
0
200
400
600
IC (A)
800
0
1000
0.4
0.8
1.2
1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.1
0.08
0.06
0.04
0.02
Diode
0.9
0.7
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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5-6
APTGT750U60D4G – Rev 1 October 2012
Thermal Impedance (°C/W)
0.12
APTGT750U60D4G
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
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application in which the failure of the Seller's Product could create a situation where personal injury, death or property
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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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APTGT750U60D4G – Rev 1 October 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.