APTGT20TL601G Three level inverter Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 20A @ Tc = 80°C Application Solar converter Uninterruptible Power Supplies Features Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance High level of integration Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant All multiple inputs and outputs must be shorted together 5/6 ; 9/10 Q1 to Q4 Absolute maximum ratings IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 32 20 40 ±20 62 40A @ 550V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTGT20TL601G – Rev1 October, 2012 Symbol VCES APTGT20TL601G All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 20A Tj = 150°C VGE = VCE , IC = 300µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Max Unit 250 1.9 µA 6.5 300 V nA Max Unit V Q1 to Q4 Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=20A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 20A RG = 12 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 20A RG = 12 Tj = 25°C VGE = ±15V VBus = 300V Tj = 150°C IC = 20A Tj = 25°C RG = 12 Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Junction to Case Thermal Resistance Min Typ 1100 70 35 pF 0.2 µC 110 45 200 ns 40 120 50 ns 250 60 0.11 0.2 0.5 0.7 mJ 100 A mJ 2.4 www.microsemi.com °C/W 2-7 APTGT20TL601G – Rev1 October, 2012 Symbol Characteristic APTGT20TL601G CR1 to CR6 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Test Conditions IF = 20A VGE = 0V IF = 20A VR = 300V di/dt =1600A/µs Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 20 1.6 1.5 100 150 1.1 Tj = 150°C Tj = 25°C Tj = 150°C 2.3 0.23 0.50 Max 150 350 Junction to Case Thermal Resistance Unit V µA A 2 V ns µC mJ 3.25 °C/W Max Unit V Thermal and package characteristics Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 Min 4000 -40 -40 -40 2 Typ 175 125 100 3 110 °C N.m g 3-7 APTGT20TL601G – Rev1 October, 2012 Symbol VISOL TJ TSTG TC Torque Wt APTGT20TL601G SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Q1 to Q4 Typical performance curve 80 VCE=300V D=50% R G=12Ω T J=150°C 60 T c =85°C 40 Hard switching 20 0 0 5 10 15 20 25 30 IC (A) www.microsemi.com 4-7 APTGT20TL601G – Rev1 October, 2012 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current APTGT20TL601G Output Characteristics (VGE=15V) Output Characteristics 40 40 TJ=25°C 35 TJ=150°C 25 IC (A) IC (A) 30 TJ=125°C 30 20 10 10 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 0.5 1.25 35 TJ=25°C E (mJ) 25 20 TJ=125°C 10 TJ=150°C 0.75 TJ=25°C 7 8 9 Eoff 0 10 11 0 12 10 20 30 40 IC (A) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 50 VCE = 300V VGE =15V IC = 20A TJ = 150°C Eon 40 Eoff IC (A) E (mJ) 1 3.5 Eon VGE (V) 1.5 3 0.5 0 6 2.5 0.25 5 5 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 12Ω TJ = 150°C 1 30 15 1 Energy losses vs Collector Current Transfert Characteristics 40 IC (A) VGE=9V 5 TJ=25°C 0 VGE=15V 20 15 5 VGE=13V 25 15 0 VGE=19V TJ = 150°C 35 30 20 0.5 VGE=15V TJ=150°C RG=12Ω 10 Eon 0 0 10 30 50 70 0 100 Gate Resistance (ohms) 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 2.4 2 1.6 1.2 0.8 0.4 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-7 APTGT20TL601G – Rev1 October, 2012 Thermal Impedance (°C/W) 2.8 APTGT20TL601G CR1 to CR6 Typical performance curve Forward Characteristic of diode 40 35 30 IF (A) 25 20 15 TJ=150°C 10 5 TJ=25°C 0 0 0.4 0.8 1.2 VF (V) 1.6 2 2.4 Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 0.8 0.5 VCE = 300V IC = 20A TJ = 150°C 0.6 E (mJ) E (mJ) 0.375 0.25 0.4 0.125 0.2 0 0 10 30 50 VCE = 300V RG = 12Ω TJ = 150°C 0 70 10 20 30 40 IF (A) Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 3 2.5 2 1.5 0.9 0.7 0.5 0.3 1 0.5 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 6-7 APTGT20TL601G – Rev1 October, 2012 Thermal Impedance (°C/W) 3.5 APTGT20TL601G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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