APTCV90TL12T3G Three level inverter CoolMOS & Trench + Field Stop IGBT4 Power Module Trench & Field Stop IGBT4 Q2, Q3: VCES = 1200V ; IC = 40A @ Tc = 80°C CoolMOS™ Q1, Q4: VDSS = 900V ; ID = 23A @ Tc = 80°C Application Solar converter Uninterruptible Power Supplies Features Q2, Q3 Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses 28 27 26 25 16 30 15 31 14 Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant 20 19 18 23 22 29 Q1, Q4 CoolMOS™ Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged 13 32 2 3 4 7 8 10 11 12 All ratings @ Tj = 25°C unless otherwise specified These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1 - 10 APTCV90TL12T3G – Rev 2 October, 2012 All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … APTCV90TL12T3G Q1 & Q4 Absolute maximum ratings (per CoolMOS™) Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Max ratings 900 30 23 75 ±20 120 250 8.8 2.9 1940 Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Unit V A V m W A mJ Q1 & Q4 Electrical Characteristics (per CoolMOS™) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V Min Typ 2.5 500 100 3 Tj = 25°C Tj = 125°C VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V Max 100 Unit 120 3.5 100 m V nA Max Unit µA Q1 & Q4 Dynamic Characteristics (per CoolMOS™) Symbol Characteristic Input Capacitance Ciss Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf RthJC Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V ; VDS = 100V f = 1MHz Min Typ 6800 330 pF 270 VGS = 10V VBus = 400V ID = 26A nC 32 115 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 26A RG = 7.5 70 20 ns 400 25 0.5 Junction to Case Thermal resistance °C/W Q2 & Q3 Absolute maximum ratings (per IGBT) Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 60 40 70 ±20 220 Tj = 150°C 70A @ 1100V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area www.microsemi.com Unit V A V W 2 - 10 APTCV90TL12T3G – Rev 2 October, 2012 Symbol VCES APTCV90TL12T3G Q2 & Q3 Electrical Characteristics (per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 35A Tj = 150°C VGE = VCE , IC = 1.2mA VGE = 20V, VCE = 0V Min Typ 5.0 1.85 2.25 5.8 Min Typ Max Unit 250 2.25 µA 6.5 400 V nA Max Unit V Q2 & Q3 Dynamic Characteristics (per IGBT) Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=35A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 35A RG = 12 Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 35A RG = 12 TJ = 25°C VGE = ±15V VCE = 600V TJ = 150°C IC = 35A TJ = 25°C RG = 12 TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 1950 155 115 pF 0.27 µC 130 20 300 ns 45 150 35 ns 350 80 2.6 4 2 3 mJ 140 A Junction to Case Thermal Resistance mJ 0.68 °C/W CR2 & CR3 diode ratings and characteristics (per device) VF RthJC Diode + tranzorb Forward Voltage Test Conditions IF = 10A Junction to Case Thermal Resistance Min Typ Max 10.5 V 8 www.microsemi.com Unit °C/W 3 - 10 APTCV90TL12T3G – Rev 2 October, 2012 Symbol Characteristic APTCV90TL12T3G CR5 & CR6 diode ratings and characteristics (per diode) Symbol VRRM IRM IF VF Characteristic Test Conditions Min 1000 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current DC Forward Current Typ VR=1000V 100 Tc = 80°C IF = 40A IF = 80A IF = 40A Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/µs Err Reverse Recovery Energy IF = 40A VR = 667V IF = 40A VR = 667V Max Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 40 2.5 3.1 2 250 315 415 Tj = 125°C 1650 Tj = 125°C 1.3 Unit V µA A 3 V ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 1.2 °C/W Max Unit V µA A CR7 & CR8 diode ratings and characteristics (per diode) Symbol VRRM IRM IF VF Characteristic Test Conditions Min 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current DC Forward Current Typ VR=1200V 100 Tc = 80°C IF = 30A IF = 60A IF = 30A Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/µs Err Reverse Recovery Energy IF = 30A VR = 800V IF = 30A VR = 800V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 40 2.6 3.2 1.8 300 380 360 Tj = 125°C 1700 Tj = 125°C 1.6 3.1 V ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 1.2 °C/W Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1 RT: Thermistor value at T 1 exp B25 / 85 T25 T www.microsemi.com 4 - 10 APTCV90TL12T3G – Rev 2 October, 2012 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). APTCV90TL12T3G Thermal and package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Min 4000 -40 -40 -40 2 Typ Max 175* 125 100 3 110 Unit V °C N.m g * Tjmax = 150°C for Q1 & Q4 SP3 Package outline (dimensions in mm) See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Q2 & Q3 Typical performance curve 80 VCE=600V D=50% R G=12 Ω T J=150°C Tc=75°C 60 40 20 Hard switching 0 0 10 20 30 40 50 60 70 IC (A) www.microsemi.com 5 - 10 APTCV90TL12T3G – Rev 2 October, 2012 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current APTCV90TL12T3G Output Characteristics (VGE=15V) 70 Output Characteristics 70 60 TJ=25°C VGE=19V 50 TJ=150°C 40 IC (A) IC (A) 50 30 VGE=15V 40 30 20 20 10 10 0 VGE=9V 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 70 E (mJ) 8 40 30 4 Eon Eoff TJ=150°C 2 10 0 0 5 6 7 8 9 10 11 12 0 13 10 20 30 40 50 60 70 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 10 80 70 VCE = 600V VGE =15V IC = 35A TJ = 150°C 6 Eon 60 IC (A) 8 E (mJ) 3 6 4 20 2 VCE (V) VCE = 600V VGE = 15V RG =12 Ω TJ = 150°C 10 50 1 Energy losses vs Collector Current 12 TJ=25°C 60 IC (A) TJ = 150°C 60 Eoff 4 50 40 30 VGE=15V TJ=150°C RG=12 Ω 20 2 10 0 0 0 10 20 30 40 Gate Resistance (ohms) 50 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.6 IGBT 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 6 - 10 APTCV90TL12T3G – Rev 2 October, 2012 Thermal Impedance (°C/W) 0.7 APTCV90TL12T3G Q1 & Q4 Typical performance curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 6V 80 5V 40 0 0 5 10 15 VDS, Drain to Source Voltage (V) 20 Maximum Safe Operating Area 925 900 25 limited by RDSon 75 100 125 10 10 ms Single pulse TJ=150°C TC=25°C 25 20 15 10 5 0.1 0 1 10 100 1000 25 VDS, Drain to Source Voltage (V) Ciss 10000 1000 Coss 100 10 Crss 1 0 50 75 100 125 TC, Case Temperature (°C) 150 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 50 30 ID, DC Drain Current (A) ID, Drain Current (A) 950 DC Drain Current vs Case Temperature 35 100 µs 1 975 TJ, Junction Temperature (°C) 1000 100 1000 10 VDS=720V ID=26A TJ=25°C 8 6 4 2 0 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) www.microsemi.com 0 50 100 150 200 Gate Charge (nC) 250 300 7 - 10 APTCV90TL12T3G – Rev 2 October, 2012 ID, Drain Current (A) VGS=20, 8V BVDSS, Drain to Source Breakdown Voltage Breakdown Voltage vs Temperature 120 APTCV90TL12T3G CR5 & CR6 Typical performance curve Forward Current vs Forward Voltage IF, Forward Current (A) 80 TJ=125°C 60 40 20 TJ=25°C 0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 1.4 2 1.2 1.2 E (mJ) E (mJ) 1.6 VCE = 667V VGE = 15V RG = 5Ω TJ = 125°C 0.8 0.4 20 40 60 VCE = 667V VGE =15V IC = 40A TJ = 125°C 0.8 0 0 1 0.6 80 0 10 IC (A) 20 30 Gate resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.8 0.9 0.7 0.5 0.6 0.4 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) www.microsemi.com 8 - 10 APTCV90TL12T3G – Rev 2 October, 2012 Thermal Impedance (°C/W) 1.4 APTCV90TL12T3G CR7 & CR8 Typical performance curve Forward Current vs Forward Voltage IF, Forward Current (A) 80 TJ=125°C 60 40 20 TJ=25°C 0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) Switching Energy Losses vs Gate Resistance 1.8 2 1.6 1.4 1.5 E (mJ) E (mJ) Energy losses vs Collector Current 2.5 VCE = 800V VGE = 15V RG = 5Ω TJ = 125°C 1 0.5 20 40 60 VCE = 800V VGE =15V IC = 30A TJ = 125°C 1 0.8 0 0 1.2 0.6 80 0 10 IC (A) 20 30 Gate resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.8 0.9 0.7 0.5 0.6 0.4 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) www.microsemi.com 9 - 10 APTCV90TL12T3G – Rev 2 October, 2012 Thermal Impedance (°C/W) 1.4 APTCV90TL12T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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