APTGT50TL60T3G Three level inverter Trench + Field Stop IGBT Power Module VCES = 600V IC = 50A @ Tc = 80°C Application Solar converter Uninterruptible Power Supplies Features Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring 28 27 26 25 Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … Q1 to Q4 Absolute maximum ratings IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-8 APTGT50TL60T3G – Rev1 October, 2012 Symbol VCES APTGT50TL60T3G All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Q1 to Q4 Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=50A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 Tj = 25°C VGE = ±15V Tj = 150°C VBus = 300V IC = 50A Tj = 25°C RG = 8.2 Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Junction to Case Thermal Resistance Min Typ 3150 200 95 pF 0.5 µC 110 45 200 ns 40 120 50 250 ns 60 0.3 0.43 1.35 1.75 mJ mJ 250 A 0.85 www.microsemi.com °C/W 2-8 APTGT50TL60T3G – Rev1 October, 2012 Symbol Characteristic APTGT50TL60T3G CR1 to CR4 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Test Conditions IF = 30A VGE = 0V IF = 30A VR = 300V di/dt =1800A/µs Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 30 1.6 1.5 100 150 1.5 Tj = 150°C Tj = 25°C Tj = 150°C 3.1 0.34 0.75 Max 150 350 Junction to Case Thermal Resistance Unit V µA A 2 V ns µC mJ 2.45 °C/W Max Unit CR5 & CR6 diode ratings and characteristics Symbol Characteristic VRRM IRM IF Test Conditions Maximum Reverse Leakage Current trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy V VR=600V Tj = 25°C Tj = 150°C IF = 50A VGE = 0V Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C 50 1.6 1.5 100 Tj = 150°C Tj = 25°C 150 2.6 Tj = 150°C Tj = 25°C Tj = 150°C 5.4 0.60 1.20 DC Forward current Diode Forward Voltage Typ 600 Maximum Peak Repetitive Reverse Voltage VF RthJC Min IF = 50A VR = 300V di/dt =1800A/µs 150 350 Junction to Case Thermal Resistance µA A 2 V ns µC mJ 1.42 °C/W Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T T 25 www.microsemi.com 3-8 APTGT50TL60T3G – Rev1 October, 2012 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). APTGT50TL60T3G Thermal and package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Min 4000 -40 -40 -40 2 Typ Max 175 125 100 3 110 Unit V °C N.m g SP3 Package outline (dimensions in mm) See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Q1 to Q4 Typical performance curve 80 VCE=300V D=50% R G=8.2Ω T J=150°C 60 T c =85°C 40 Hard switching 20 0 0 20 40 60 80 IC (A) www.microsemi.com 4-8 APTGT50TL60T3G – Rev1 October, 2012 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current APTGT50TL60T3G Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ=25°C TJ = 150°C TJ=125°C VGE=13V TJ=150°C 60 60 VGE=15V 40 40 20 20 TJ=25°C 0 0 0.5 1 1.5 VCE (V) VGE=9V 0 2 2.5 0 3 3.5 2.5 60 E (mJ) IC (A) 1 1.5 2 VCE (V) 2.5 VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 3 TJ=25°C 80 0.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 100 VGE=19V 80 IC (A) IC (A) 80 40 Eoff 2 1.5 1 TJ=150°C 20 0 0 5 6 7 Eon 0.5 TJ=25°C 8 9 10 11 0 12 20 40 Switching Energy Losses vs Gate Resistance 80 100 Reverse Bias Safe Operating Area 3 125 2.5 Eoff 100 IC (A) 2 E (mJ) 60 IC (A) VGE (V) 1.5 50 VCE = 300V VGE =15V IC = 50A TJ = 150°C 1 Eon 0.5 75 VGE=15V TJ=150°C RG=8.2Ω 25 0 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 0.6 0.9 0.7 0.5 0.4 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-8 APTGT50TL60T3G – Rev1 October, 2012 Thermal Impedance (°C/W) 1 APTGT50TL60T3G CR1 to CR4 Typical performance curve Forward Characteristic of diode 60 50 IF (A) 40 30 20 TJ=150°C 10 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 1 1 VCE = 300V VGE =15V IC = 30A TJ = 150°C 0.75 E (mJ) E (mJ) 0.75 0.5 0.5 0.25 0.25 0 0 0 10 20 30 40 50 60 Gate Resistance (ohms) VCE = 300V VGE = 15V RG = 10Ω TJ = 150°C 0 70 10 20 30 40 50 60 IF (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 2.5 2 0.9 0.7 1.5 0.5 1 0.3 0.5 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 6-8 APTGT50TL60T3G – Rev1 October, 2012 Thermal Impedance (°C/W) 3 APTGT50TL60T3G CR5 & CR6 Typical performance curve Forward Characteristic of diode 100 IF (A) 80 60 40 TJ=150°C 20 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 1.5 1.2 1 0.8 E (mJ) E (mJ) 1 0.6 VCE = 300V VGE =15V IC = 50A TJ = 150°C 0.4 0.2 VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 0.5 0 0 5 15 25 35 45 55 0 65 20 40 60 80 100 IF (A) Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 1.2 1 0.9 0.7 0.8 0.5 0.6 0.3 0.4 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 7-8 APTGT50TL60T3G – Rev1 October, 2012 Thermal Impedance (°C/W) 1.6 APTGT50TL60T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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