ETC AO8701

Rev 1: Oct 2004
AO8701, AO8701L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AO8701 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch.
AO8701L ( Green Product ) is offered in a lead-free
package.
D
S
S
G
1
2
3
4
8
7
6
5
VDS (V) = -30V
ID = -4.2A
RDS(ON) < 50mΩ (VGS = 10V)
RDS(ON) < 65mΩ (VGS = 4.5V)
RDS(ON) < 120mΩ (VGS = 2.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, [email protected]
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain CurrentA
TA=70°C
B
TA=25°C
A
Continuous Forward Current
TA=70°C
B
S
A
MOSFET
TA=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-AmbientA
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Steady-State
Steady-State
t ≤ 10s
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
TJ, TSTG
Symbol
RθJA
RθJL
RθJA
RθJL
Units
V
±12
-4.2
V
-3.5
A
-30
IF
PD
Schottky
-30
IFM
TA=25°C
Maximum Junction-to-Lead
ID
IDM
VKA
Schottky reverse voltage
Pulsed Forward Current
K
G
TSSOP-8
Pulsed Drain Current
D
K
A
A
A
30
3
V
2
A
1.4
40
1.4
1
1
-55 to 150
-55 to 150
°C
Typ
Max
Units
73
90
96
63
125
75
75
90
97
63
125
75
W
°C/W
°C/W
AO8701, AO8701L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.7
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-25
VGS=-10V, ID=-4.2A
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
43
50
A
75
mΩ
mΩ
VGS=-2.5V, ID=-1A
82
120
mΩ
VDS=-5V, ID=-5A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
V
65
IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Crss
nA
-1.3
54
Forward Transconductance
Output Capacitance
±100
VGS=-4.5V, ID=-4A
gFS
Coss
µA
-1
TJ=125°C
VSD
IS
Units
-1
VGS(th)
Static Drain-Source On-Resistance
Max
V
VDS=-24V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-15V, ID=-4A
7
11
-0.75
S
-1
V
-2.2
A
954
pF
115
pF
77
pF
6.1
Ω
9.4
nC
2
nC
Qgd
Gate Drain Charge
3
nC
tD(on)
Turn-On DelayTime
6.3
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=-10V, VDS=-15V, RL=3.6Ω,
RGEN=6Ω
3.2
ns
38.2
ns
12
ns
IF=-4A, dI/dt=100A/µs
20.2
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
11.2
ns
nC
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1.0A
0.45
0.5
VR=30V
VR=30V, TJ=125°C
0.007
0.05
Irm
3.2
10
VR=30V, TJ=150°C
12
37
20
CT
Maximum reverse leakage current
Junction Capacitance
VR=15V
V
mA
pF
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8701, AO8701L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
25
-10V
VDS=-5V
-4.5V
20
8
6
15
-ID(A)
-ID (A)
-3V
-2.5V
10
VGS=-2V
5
125°C
4
25°C
2
0
0
0
1
2
3
4
5
0
120
Normalized On-Resistance
RDS(ON) (mΩ)
1
1.6
100
VGS=-2.5V
80
60
VGS=-4.5V
40
VGS=-10V
20
1.5
2
2.5
3
ID=-5A
VGS=-4.5V
VGS=-10V
1.4
1.2
VGS=-2.5V
ID=-2A
1
0.8
0
2
4
6
8
10
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
170
1.0E+00
ID=-2A
1.0E-01
90
125°C
70
50
-IS (A)
130
110
25°C
50
75
100
125
150
175
125°C
1.0E-02
1.0E-03
1.0E-04
30
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
190
150
RDS(ON) (mΩ)
0.5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
25°C
1.0E-05
1.0E-06
10
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
-VSD (Volts)
(Volts)
-V
OUT OF SUCH APPLICATIONS ORGS
USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Figure 6: Body-Diode Characteristics
Figure
5: On-Resistance
vs. Gate-Source
Voltage
FUNCTIONS AND
RELIABILITY
WITHOUT
NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8701, AO8701L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=-15V
ID=-4A
1200
Capacitance (pF)
-VGS (Volts)
4
3
2
1000
Ciss
800
600
400
1
Coss
200
0
0
0
2
4
6
8
10
12
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
10.0
5
10
15
TJ(Max)=150°C
TA=25°C
40
RDS(ON)
limited
100µs
10µs
25
30
TJ(Max)=150°C
TA=25°C
30
1ms
0.1s
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-ID (Amps)
Crss
10ms
1.0
20
10
1s
10s
DC
0.1
0.1
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01 HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
THIS PRODUCT
0.00001
0.0001 DEVICES
0.001
0.01 ARE NOT 0.1
10 ASSUME100
1000
COMPONENTS
IN LIFE SUPPORT
OR SYSTEMS
AUTHORIZED.1AOS DOES NOT
ANY LIABILITY
ARISING
PulseRESERVES
Width (s) THE RIGHT TO IMPROVE PRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS
Figure 11: Normalized Maximum Transient Thermal Impedance
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8701,AO8701L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
250
10
f = 1MHz
Capacitance (pF)
1
IF (Amps)
200
125°C
0.1
0.01
150
100
50
25°C
0.001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
VF (Volts)
Figure 12: Schottky Forward Characteristics
10
15
20
25
30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.7
Leakage Current (mA)
100
0.6
VF (Volts)
5
IF=3A
0.5
0.4
IF=1A
0.3
0.2
10
1
VR=30V
0.1
0.01
0.001
0.1
0
25
50
75
100
125
Temperature (°C)
150
0
175
25
50
75
100
125
150
175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000