AOSMD AO4900A

AO4900A
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AO4900A uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further. Standard Product AO4900A is Pbfree (meets ROHS & Sony 259 specifications).
AO4900AL is a Green Product ordering option.
AO4900A and AO4900AL are electrically identical.
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 2.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, [email protected]
D2
S2/A
G2
S1
G1
8
7
6
5
1
2
3
4
D2/K
D2/K
D1
D1
K
A
G2
SOIC-8
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain CurrentA
Pulsed Drain Current
TA=70°C
B
TA=25°C
A
Continuous Forward Current
TA=70°C
B
G1
S1
MOSFET
TA=70°C
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-AmbientA
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Steady-State
Steady-State
t ≤ 10s
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
TJ, TSTG
Symbol
RθJA
RθJL
RθJA
RθJL
Units
V
±12
6.9
V
5.8
A
40
IF
PD
Schottky
30
IFM
TA=25°C
Maximum Junction-to-Lead
ID
IDM
VKA
Schottky reverse voltage
Pulsed Forward Current
D1
30
3
V
2
A
2
40
2
1.44
1.44
-55 to 150
-55 to 150
°C
Typ
Max
Units
55
62.5
90
40
110
48
47.5
62.5
71
32
110
40
W
°C/W
°C/W
AO4900A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
30
VDS=24V, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
0.7
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
VGS=10V, ID=6.9A
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
nA
1.5
V
A
VGS=4.5V, ID=6A
23
32
mΩ
VGS=2.5V, ID=5A
34
50
mΩ
VDS=5V, ID=5A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
100
40
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Output Capacitance
1
µA
27
Forward Transconductance
Crss
V
25
VSD
Coss
1
20
TJ=125°C
gFS
IS
0.002
Units
5
VGS(th)
Static Drain-Source On-Resistance
Max
TJ=55°C
IGSS
RDS(ON)
Typ
10
26
0.71
900
VGS=0V, VDS=15V, f=1MHz
mΩ
S
1
V
4.5
A
1100
pF
88
pF
65
pF
VGS=0V, VDS=0V, f=1MHz
0.95
1.5
Ω
10
12
nC
VGS=4.5V, VDS=15V, ID=8.5A
1.8
nC
Qgd
Gate Drain Charge
3.75
nC
tD(on)
Turn-On DelayTime
3.2
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=6Ω
3.5
ns
21.5
ns
IF=5A, dI/dt=100A/µs
16.8
20
8
12
ns
nC
0.45
0.5
V
VR=30V
VR=30V, TJ=125°C
0.007
0.05
3.2
10
VR=30V, TJ=150°C
12
37
20
2.7
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1.0A
Irm
CT
Maximum reverse leakage current
Junction Capacitance
VR=15V
ns
mA
pF
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 0 : Feb 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4900A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
20
10V
50
40
3V
12
ID(A)
ID (A)
VDS=5V
16
4.5V
30
2.5V
125°C
8
20
25°C
4
VGS=2V
10
0
0
0
1
2
3
4
5
0
0.5
VDS (Volts)
Fig 1: On-Region Characteristics
1
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics
60
RDS(ON) (mΩ)
Normalized On-Resistance
1.7
50
VGS=2.5V
40
30
VGS=4.5V
20
VGS=10V
10
VGS=4.5V
1.5
VGS=10V
1.3
VGS=2.5V
1.1
VGS=2.5V
0.9
0.7
VGS=4.5
0.5
0
5
10
15
20
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
25
50
75
100 125 150 175
1.0E+01
90
1.0E+00
80
70
-25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
100
ID=6.9A
1.0E-01
125°C
60
IS (A)
RDS(ON) (mΩ)
VGS=10V
50
125°C
1.0E-02
1.0E-03
40
25°C
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER
1.0E-04 MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
IN 25°C
LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
30
1.0E-05 THE RIGHT TO IMPROVE PRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
20
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1.0E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
VSD (Volts)
Figure 6: Body-Diode Characteristics
AO4900A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=15V
ID=6.9A
1200
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
1000
800
600
400
Crss
1
Coss
200
0
0
0
2
4
6
8
10
12
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
ID (Amps)
Power (W)
1ms
10s
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJA=62.5°C/W
30
30
20
0
1s
0.1
25
10
10ms
DC
20
T J(Max)=150°C
T A=25°C
40
10µs
1.0
15
50
T J(Max)=150°C
T A=25°C
RDS(ON)
limited
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
5
0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT
OR USES AS CRITICAL
D
0.1 HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.PAPPLICATIONS
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
T onIMPROVE PRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
T
Single Pulse
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4900A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
250
10
f = 1MHz
Capacitance (pF)
125°C
IF (Amps)
1
0.1
200
150
100
0.01
25°C
0
0.001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
5
10
15
20
25
30
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
VF (Volts)
Figure 12: Schottky Forward Characteristics
0.7
100
0.6
IF=3A
Leakage Current (mA)
VF (Volts)
50
0.5
0.4
IF=1A
0.3
0.2
10
1
VR=30V
0.1
0.01
0.001
0.1
0
25
50
75
100
125
Temperature (°C)
150
0
175
25
50
75
100
125
150
175
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
ZθJA Normalized Transient
Thermal Resistance
10
1
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
T on
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000