Datasheet

AON4701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AON4701 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AON4701 is Pb-free (meets ROHS &
Sony 259 specifications).
VDS (V) = -20V
ID = -3.4A (VGS = -4.5V)
RDS(ON) < 90mΩ (VGS = -4.5V)
RDS(ON) < 120mΩ (VGS = -2.5V)
RDS(ON) < 160mΩ (VGS = -1.8V)
SCHOTTKY
VKA (V) = 20V, IF = 1A, VF<0.5V@0.5A
A
A
S
G
1
2
3
4
8
7
6
5
VGS
Gate-Source Voltage
TA=25°C
TA=70°C
TA=25°C
TA=70°C
A
TA=25°C
TA=70°C
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Thermal Characteristics Schottky
t ≤ 10s
Maximum Junction-to-Ambient A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead C
TJ, TSTG
Symbol
RθJA
RθJL
RθJA
RθJL
Units
V
±8
-3.4
V
-2.7
A
-15
IF
PD
Schottky
-20
IFM
B
Power Dissipation
MOSFET
VKA
Schottky reverse voltage
Pulsed Forward Current
ID
IDM
B
Continuous Forward Current A
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
Pulsed Drain Current
K
K
K
D
D
DFN3X2-8L
Continuous Drain Current A
D
20
1.9
V
1.2
A
1.7
7
0.96
1.1
0.62
-55 to 150
-55 to 150
°C
Typ
49
81
37
Max
75
100
45
Units
60
89
40
75
130
50
W
°C/W
°C/W
AON4701
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON)
gFS
VSD
IS
Conditions
Min
ID=-250µA, VGS=0V
VDS=-16V, VGS=0V
-20
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-3.4A
-0.3
-15
TJ=125°C
VGS=-2.5V, ID=-2.5A
VGS=-1.8V, ID=-1.5A
VDS=-5V, ID=-3.4A
Forward Transconductance
IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
Irm
Maximum reverse leakage current
CT
trr
Qrr
Junction Capacitance
SchottkyReverse Recovery Time
Schottky Reverse Recovery Charge
Max
-0.63
-1
-5
±100
-1
4
Units
V
TJ=55°C
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Typ
73
102
95
123
7
-0.83
µA
nA
V
A
90
125
120
160
mΩ
mΩ
-1
-2
S
V
A
mΩ
540
72
49
12
pF
pF
pF
Ω
6.1
0.6
1.6
10
12
44
22
nC
nC
nC
ns
ns
ns
ns
IF=-3.8A, dI/dt=100A/µs
IF=-3.8A, dI/dt=100A/µs
21
7.5
ns
nC
IF=0.5A
VR=16V
VR=16V, TJ=125°C
0.39
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-10V, ID=-3.8A
VGS=-4.5V, VDS=-10V, RL=2.6Ω,
RGEN=3Ω
VR=10V
IF=1A, dI/dt=100A/µs
IF=1A, dI/dt=100A/µs
0.5
0.1
20
34
5.2
0.8
V
mA
pF
10
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 0. December 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AON4701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
15
-4.5V
-3.0V
VDS=-5V
-2.5V
-8V
4
10
-ID(A)
-ID (A)
-2.0V
2
5
125°C
VGS=-1.5V
25°C
0
0
0
1
2
3
4
-VDS (Volts)
Fig 1: On-Region Characteristics
5
0
160
0.5
1
1.5
-VGS(Volts)
Figure 2: Transfer Characteristics
2
1.8
VGS=-1.8V
150
Normalized On-Resistance
140
130
RDS(ON) (mΩ)
165
120
VGS=-2.5V
110
100
90
VGS=-4.5V
80
70
VGS=-2.5V
ID=-2.5A
1.6
VGS=-1.8V
ID=-1.5A
1.4
VGS=-4.5V
ID=-3.4A
1.2
1
60
50
0.8
0
1
2
3
4
5
6
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
200
1E+01
1E+00
ID=-3.4A
1E-01
-IS (A)
RDS(ON) (mΩ)
150
125°C
100
25°C
125°C
1E-02
25°C
1E-03
1E-04
1E-05
50
0
2
4
6
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
8
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AON4701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
VDS=-10V
ID=-3.4A
Capacitance (pF)
-VGS (Volts)
4
3
2
1
Ciss
600
400
Crss
200
Coss
165
0
0
2
4
6
0
8
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
20
10μs
RDS(ON)
limited
10ms
1s
DC
1
10
0
0.001
100
-VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
10
0.01
1
10
100
1000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJA=75°C/W
PD
0.1
T on
Single Pulse
0.01
0.00001
0.1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1
10
5
0.1
0.1
20
15
1ms
0.1s
15
T J(Max)=150°C
T A=25°C
100μs
Power (W)
-ID (Amps)
T J(Max)=150°C
T A=25°C
1.0
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
5
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AON4701
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
100
1.0E+01
125°C
f = 1MHz
80
Capacitance (pF)
IF (Amps)
1.0E+00
1.0E-01
1.0E-02
60
40
20
25°C
1.0E-03
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
0
VF (Volts)
Figure 12: Schottky Forward Characteristics
10
15
20
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.5
1.0E-02
Leakage Current (A)
0.4
VF (Volts)
5
IF=0.5A
0.3
0.2
1.0E-03
VR=16V
1.0E-04
1.0E-05
1.0E-06
0.1
0
25
50
75
100
Temperature (°C)
125
0
150
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
50
75
100
125
150
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
10
25
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000