AOSMD AO3705

AO3705
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
Features
The AO3705/L uses advanced trench technology to
provide excellent R DS(ON), low gate charge. A Schottky
diode is provided to facilitate the implementation of a
bidirectional blocking switch, or for buck convertor
applications.
AO3705 and AO3705L are electrically identical.
-RoHs Complaint
-AO3705L is Halogen Free
VDS (V) = -20V
ID = -3.2A
(V GS = -4.5V)
RDS(ON) < 70mΩ (VGS = -4.5V)
RDS(ON) < 90mΩ (VGS = -2.5V)
RDS(ON) < 110mΩ (VGS = -1.8V)
RDS(ON) < 130mΩ (VGS = -1.5V)
SCHOTTKY
VDS (V) = 20V, IF = 1A, VF<[email protected]
SOT-23-5
D
K
S
A
Top View
G
S
A
1
2
3
5
D
4
K
G
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain Current
Pulsed Drain Current
A
TA=70°C
B
IDM
VKA
Schottky reverse voltage
TA=25°C
Continuous Forward Current
Pulsed Forward Current
ID
A
TA=70°C
B
Schottky
TA=70°C
Power Dissipation
V
±8
-3.2
V
-2.5
A
-25
IF
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Thermal Characteristics Schottky
Symbol
t ≤ 10s
Steady-State
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
A
Steady-State
Alpha Omega Semiconductor, Ltd.
Steady-State
RθJA
RθJL
RθJA
RθJL
20
1
V
0.5
A
1.15
10
0.66
0.7
0.42
TJ, TSTG
Junction and Storage Temperature Range
A
PD
Units
-20
IFM
TA=25°C
Maximum Junction-to-Ambient
MOSFET
-55 to 150
Typ
W
°C
Max
80.3
110
117
43
150
80
153
190
173
103
220
140
Units
°C/W
°C/W
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AO3705
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-20
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.5
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-25
TJ=125°C
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
V
56
70
80
100
A
mΩ
mΩ
90
VGS=-1.8V, ID=-2A
mΩ
130
mΩ
-1
V
-1.2
A
745
pF
VGS=-1.5V, ID=-0.5A
100
VDS=-5V, ID=-3.2A
15
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
nA
-1
110
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Crss
±100
-0.65
85
VSD
Output Capacitance
µA
70
Forward Transconductance
Coss
-5
VGS=-2.5V, ID=-2.8A
gFS
IS
Units
V
TJ=55°C
VGS=-4.5V, ID=-3.2A
Static Drain-Source On-Resistance
Max
-1
VDS=-20V, VGS=0V
IDSS
RDS(ON)
Typ
-0.7
560
VGS=0V, VDS=-10V, f=1MHz
S
80
pF
70
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-10V, ID=-3.2A
pF
15
23
Ω
8.5
11
nC
1.2
nC
nC
Qgd
Gate Drain Charge
2.1
tD(on)
Turn-On DelayTime
7.2
ns
tr
Turn-On Rise Time
36
ns
tD(off)
Turn-Off DelayTime
53
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
VGS=-4.5V, VDS=-10V, RL=3Ω,
RGEN=6Ω
56
IF=-3.2A, dI/dt=100A/µs
37
Qrr
Body Diode Reverse Recovery Charge IF=-3.2A, dI/dt=100A/µs
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1A
27
Irm
Maximum reverse leakage current
CT
Junction Capacitance
trr
Qrr
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
0.4
VR=16V
VR=16V, TJ=125°C
VR=10V
IF=1A, dI/dt=100A/µs
IF=1A, dI/dt=100A/µs
ns
49
nC
0.45
0.1
20
44
11
2.5
ns
V
mA
pF
14
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev1: May 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO3435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
-4.5V
-2.5V
20
15
15
-ID(A)
-ID (A)
VDS=-5V
-3.0V
-2.0V
10
10
5
VGS=-1.5V
5
125°C
0
0
1
2
3
4
5
0
1
1.5
2
2.5
3
1.6
150
Normalized On-Resistance
VGS=-1.5V
130
RDS(ON) (mΩ)
0.5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Figure 1: On-Region Characteristics
VGS=-1.8V
110
90
VGS=-2.5V
70
VGS=-4.5V
50
VGS=2.5V
1.4
VGS=-4.5V
ID=-3.5A
1.2
VGS=-1.5V
ID=-0.5A
1
0.8
0
2
4
6
8
10
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+02
180
ID=-3.2A
160
1E+01
12
140
1E+00
120
1E-01
100
-IS (A)
RDS(ON) (mΩ)
25°C
0
125°C
80
125°C
1E-02
25°C
1E-03
60
1E-04
25°C
40
1E-05
0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO3435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1200
Capacitance (pF)
4
-VGS (Volts)
1400
VDS=-10V
ID=-3.2A
3
2
1000
800
Ciss
600
400
1
Coss
200
0
Crss
0
0
2
4
6
8
10
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
100µ
Power (W)
-ID (Amps)
20
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
1ms
10ms
0.1s
0.10
DC
TJ(Max)=150°C
TA=25°C
0.1
1
10
0.1
0.00001
100
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=150°C/W
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
10
1
1s
-VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
15
1000
1.00
0.01
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.00
10.00
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
100
1000
AO3705
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10
200
160
125°C
Capacitance (pF)
IF (Amps)
1
0.1
25°C
0.01
120
80
40
0.001
0
0
0.2
0.4
0.6
0.8
1
1.2
0
VF (V)
Figure 12: Schottky Forward Characteristics
5
10
15
20
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
10
0.42
Leakage Current (mA)
0.39
IF=1A
VF (Volts)
0.36
0.33
IF=0.5A
0.30
0.27
0.24
0
25
50
75
100
125
1
VKA=20V
VKA=16V
0.1
0.01
150
0
Temperature (°C)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
-15
25
50
75
100
125
Temperature (°C)
Figure 15: Schottky Leakage Current vs.
Junction Temperature
150
ZθJA Normalized Transient
Thermal Resistance
10.000
1.000
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=220°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.100
PD
0.010
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
T
100
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
1000
10000