Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 1/ 5 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA1952I3 BVCEO IC RCESAT -100V -5A 150mΩ Features • Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics • Wide SOA • Complementary to BTC5103I3 • RoHS compliant package Symbol Outline BTA1952I3 TO-251 B：Base C：Collector E：Emitter B B CCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=10ms BTA1952I3 Symbol Limits Unit VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg -100 -60 -5 -5 -10 1 25 150 -55~+150 V V V *1 A W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 2/ 5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT Min. -100 -60 -5 70 30 - Typ. -0.45 60 Max. -1 -1 -0.6 -1.2 240 - Unit V V V μA μA V V MHz Test Conditions IC=-50μA, IE=0 IC=-10mA, IB=0 IE=-50μA, IC=0 VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-3A, IB=-0.15A IC=-3A, IB=-0.15A VCE=-1V, IC=-1A VCE=-1V, IC=-3A VCE=-4V, IC=-1A, f=30MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTA1952I3 BTA1952I3 Package TO-251 (RoHS compliant) Shipping Marking 80 pcs / tube, 50 tubes / box A1952 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 3/ 5 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 10000 Saturation Voltage---(mV) Current Gain---HFE VCE(SAT) 100 VCE=1V 1000 IC=20IB 100 10 IC=10IB 1 10 1 10 100 1000 1 10000 Collector Current---IC(mA) 100 1000 10000 Collector Current---IC(mA) Power Derating Curve Saturation Voltage vs Collector Current 10000 1.2 VBE(SAT) @ IC=10IB Power Dissipation---PD(W) Saturation Voltage---(mV) 10 1000 1 0.8 0.6 0.4 0.2 0 100 1 10 100 1000 Collector Current---IC(mA) 10000 0 50 100 150 200 Ambient Temperature---TA(℃) Power Derating Curve Power Dissipation---PD(W) 30 25 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC(℃) BTA1952I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 4/ 5 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature BTA1952I3 Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. CYStek Product Specification Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 5/ 5 CYStech Electronics Corp. TO-251 Dimension A B C Marking: D A1952 F G 3 K E I H 2 1 Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 J *: Typical Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0449 0.0346 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 1.14 0.88 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1952I3 CYStek Product Specification