ANPEC APM2801BC-TUL

APM2801B
P-Channel Enhancement Mode MOSFET with Schottky Diode
Pin Description
Features
MOSFET
•
-20V/-1.5A ,
RDS(ON)=145mΩ(typ.) @ VGS=-4.5V
RDS(ON)=180mΩ(typ.) @ VGS=-2.5V
•
•
•
Super High Dense Cell Design
Top View of SOT-25
Reliable and Rugged
(2)S
(4)C
(5)D
(3)A
Lead Free Available (RoHS Compliant)
SBD
•
Low Forward Voltage
(1)G
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
P-Channel MOSFET
SBD
Ordering and Marking Information
Package Code
B : SOT-25
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2801
Lead Free Code
Handling Code
Temp. Range
Package Code
APM2801B :
M81X
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Jun., 2005
1
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APM2801B
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
Unit
[MOSFET]
VDSS
Drain-Source Voltage
-20
VGSS
Gate-Source Voltage
±10
-1.5
ID
Continuous Drain Current
IDM
300µs Pulsed Drain Current
IS
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD
Maximum Power Dissipation
RθJA*
[SBD]
VRRM
IFSM
V
VGS=-4.5V
A
-6
A
-1
150
°C
-55 to 150
TA=25°C
0.83
TA=100°C
0.3
W
Thermal Resistance-Junction to Ambient
150
°C/W
Repetitive Peak Reverse Voltage
20
Maximum Peak Forward Surge Current
5.5
V
A
Note:
*Surface Mounted on 1in2 pad area, t ≤ 10sec.
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM2801B
Min.
Typ.
Max.
Unit
[MOSFET]
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
VSDa
a
Gate Leakage Current
VGS=±10V, VDS=0V
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Jun., 2005
-1
TJ=85°C
VDS=VGS, IDS=-250µA
Diode Forward Voltage
V
VDS=-16V, VGS=0V
Gate Threshold Voltage
Drain-Source On-state Resistance
-20
-30
-0.45
-0.6
-1
V
±100
nA
VGS=-4.5V, IDS=-1.5A
145
190
VGS=-2.5V, IDS=-1A
180
235
ISD=-0.5A , VGS=0V
-0.7
-1.3
2
µA
mΩ
V
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APM2801B
Electrical Characteristics (Cont.)
Symbol
Parameter
(T A = 25°C unless otherwise noted)
Test Condition
APM2801B
Min.
Typ.
Max.
Unit
[MOSFET]
Dynamic Characteristics b
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
255
VGS=0V,
VDS=-20V,
Frequency=1.0MHz
pF
70
45
VDD=-10V, RL=10Ω,
IDS=-1A, VGEN=-4.5V,
RG=6Ω
Turn-off Fall Time
6
10
8
12
9.8
15
5
10
4
6
ns
Gate Charge Characteristics b
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-1.5A
nC
0.6
0.7
[SBD]
VR
VF1
VF2
IR
C
b
Reverse Voltage
IR=0.5mA
20
V
IF=10mA
0.4
V
IF=500mA
0.5
V
Reverse Current
VR=15V
200
µA
Junction Capacitance
VR=10V,
Frequency=1.0MHz
Forward Voltage
45
pF
Notes:
a : Pulse test ; pulse width ≤ 300µs, duty cycle ≤ 2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Jun., 2005
3
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APM2801B
Typical Characteristics
P-Channel MOSFET
Drain Current
1.0
2.0
0.8
1.6
-ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
0.6
0.4
0.0
0
20
40
60
80 100 120 140 160
40
60
80 100 120 140 160
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Lim
it
Rd
s(o
n)
300µs
1ms
10ms
100ms
0.1
1s
DC
o
TA=25 C
0.01
0.01
20
Tj - Junction Temperature (°C)
10
1
0
Tj - Junction Temperature (°C)
20
-ID - Drain Current (A)
0.8
0.4
0.2
0.0
1.2
0.1
1
10
Copyright  ANPEC Electronics Corp.
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
2
0.01
1E-4
100
-VDS - Drain - Source Voltage (V)
Rev. B.4 - Jun., 2005
2
Mounted on 1in pad
o
RθJA : 150 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM2801B
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
10
0.28
VGS= -3 thru -10V
-2.5V
RDS(ON) - On - Resistance (Ω)
8
-ID - Drain Current (A)
-2V
6
4
2
0
VGS= -2.5V
0.24
0
1
2
3
0.20
0.16
0.12
0.08
0.04
4
VGS= -4.5V
0
2
4
6
8
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
6
1.8
10
IDS = -250µA
1.6
Normalized Threshold Voltage
-ID - Drain Current (A)
5
4
3
2
o
Tj=-55 C
o
1
Tj=25 C
o
Tj=125 C
1.0
0.8
0.6
0.4
0.0
-50 -25
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
1.2
0.2
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Rev. B.4 - Jun., 2005
1.4
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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APM2801B
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
6
VGS = -4.5V
IDS = -1.5A
1.4
o
Tj=150 C
-IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
0.6
0.4
o
Tj=25 C
1
0.2
o
[email protected]=25 C: 145mΩ
0.0
-50 -25
0
25
50
0.1
0.0
75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
5
500
Frequency=1MHz
-VGS - Gate - source Voltage (V)
VDS=-10 V
400
C - Capacitance (pF)
0.2
Ciss
300
200
100
Coss
IDS=-1.5 A
4
3
2
1
Crss
0
0
0
4
8
12
16
20
Copyright  ANPEC Electronics Corp.
1
2
3
4
5
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Rev. B.4 - Jun., 2005
0
6
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APM2801B
Typical Characteristics (Cont.)
SBD
IF - VF
IR - VR
0.1
0.01
75 o 5
C 0 oC
1
IR - Reverse Current (A)
o
C
125
T A=
o
C
25
T A=
0.1
10 o
0C
IF - Forward Current (A)
6
o
150 C
1E-3
o
100 C
o
75 C
1E-4
o
50 C
1E-5
o
TA=25 C
1E-6
0.01
0.0
0.2
0.4
0.6
0.8
1E-7
1.0
VF - Forward Voltage (V)
0
3
6
9
12
15
VR - Reverse Voltage (V)
C - VR
200
C - Capacitance (pF)
Frequency=1MHz
150
100
50
0
0
5
10
15
20
25
VR - Reverse Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Jun., 2005
7
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APM2801B
Packaging Information
SOT-23-5
e1
5
4
E1
1
2
E
3
e
b
D
A2
A
a
A1
Dim
A
A1
A2
b
D
E
E1
e
e1
L
L1
L2
N
α
L
Millimeters
Min.
0.95
0.05
0.90
0.30
2.8
2.6
1.5
Inches
Max.
1.45
0.15
1.30
0.50
3.00
3.00
1.70
Min.
0.037
0.002
0.035
0.011
0.110
0.102
0.059
0.35
0.55
0.014
0.20 BSC
0.5
0.022
0.008 BSC
0.7
0.020
5
0°
Max.
0.057
0.006
0.051
0.019
0.118
0.118
0.067
0.037BSC
0.074BSC
0.95BSC
1.90BSC
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Jun., 2005
L2
L1
0.028
5
10°
8
0°
10°
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APM2801B
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Time
Classificatin Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (T L)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Jun., 2005
9
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APM2801B
Classificatin Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s
Package Thickness
Volume mm 3
Volume mm 3
<350
≥350
<2.5 mm
240 +0/-5°C
225 +0/-5°C
≥2.5 mm
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm 3
Volume mm 3
Volume mm 3
<350
350-2000
>2000
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Jun., 2005
D1
10
Ko
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APM2801B
Carrier Tape & Reel Dimensions (Cont.)
T2
J
C
A
B
T1
Application
A
178±1
SOT-23-5
F
B
C
J
72 ± 1.0 13.0 + 0.2 2.5 ± 0.15
D
3.5 ± 0.05 1.5 +0.1
D1
Po
1.5 +0.1
4.0 ± 0.1
T1
T2
P
E
1.5± 0.3
W
8.0+ 0.3
- 0.3
8.4 ± 2
4 ± 0.1
1.75± 0.1
P1
Ao
Bo
Ko
t
1.4± 0.1
0.2±0.03
2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1
(mm)
Cover Tape Dimensions
Application
SOT-23-5
Carrier Width
8
Cover Tape Width
5.3
Devices Per Reel
3000
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Jun., 2005
11
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