APM2801B P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features MOSFET • -20V/-1.5A , RDS(ON)=145mΩ(typ.) @ VGS=-4.5V RDS(ON)=180mΩ(typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Top View of SOT-25 Reliable and Rugged (2)S (4)C (5)D (3)A Lead Free Available (RoHS Compliant) SBD • Low Forward Voltage (1)G Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems P-Channel MOSFET SBD Ordering and Marking Information Package Code B : SOT-25 Operating Junction Temp. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2801 Lead Free Code Handling Code Temp. Range Package Code APM2801B : M81X XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.4 - Jun., 2005 1 www.anpec.com.tw APM2801B Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating Unit [MOSFET] VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±10 -1.5 ID Continuous Drain Current IDM 300µs Pulsed Drain Current IS Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD Maximum Power Dissipation RθJA* [SBD] VRRM IFSM V VGS=-4.5V A -6 A -1 150 °C -55 to 150 TA=25°C 0.83 TA=100°C 0.3 W Thermal Resistance-Junction to Ambient 150 °C/W Repetitive Peak Reverse Voltage 20 Maximum Peak Forward Surge Current 5.5 V A Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM2801B Min. Typ. Max. Unit [MOSFET] Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VSDa a Gate Leakage Current VGS=±10V, VDS=0V Copyright ANPEC Electronics Corp. Rev. B.4 - Jun., 2005 -1 TJ=85°C VDS=VGS, IDS=-250µA Diode Forward Voltage V VDS=-16V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance -20 -30 -0.45 -0.6 -1 V ±100 nA VGS=-4.5V, IDS=-1.5A 145 190 VGS=-2.5V, IDS=-1A 180 235 ISD=-0.5A , VGS=0V -0.7 -1.3 2 µA mΩ V www.anpec.com.tw APM2801B Electrical Characteristics (Cont.) Symbol Parameter (T A = 25°C unless otherwise noted) Test Condition APM2801B Min. Typ. Max. Unit [MOSFET] Dynamic Characteristics b Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf 255 VGS=0V, VDS=-20V, Frequency=1.0MHz pF 70 45 VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω Turn-off Fall Time 6 10 8 12 9.8 15 5 10 4 6 ns Gate Charge Characteristics b Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-10V, VGS=-4.5V, IDS=-1.5A nC 0.6 0.7 [SBD] VR VF1 VF2 IR C b Reverse Voltage IR=0.5mA 20 V IF=10mA 0.4 V IF=500mA 0.5 V Reverse Current VR=15V 200 µA Junction Capacitance VR=10V, Frequency=1.0MHz Forward Voltage 45 pF Notes: a : Pulse test ; pulse width ≤ 300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.4 - Jun., 2005 3 www.anpec.com.tw APM2801B Typical Characteristics P-Channel MOSFET Drain Current 1.0 2.0 0.8 1.6 -ID - Drain Current (A) Ptot - Power (W) Power Dissipation 0.6 0.4 0.0 0 20 40 60 80 100 120 140 160 40 60 80 100 120 140 160 Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Lim it Rd s(o n) 300µs 1ms 10ms 100ms 0.1 1s DC o TA=25 C 0.01 0.01 20 Tj - Junction Temperature (°C) 10 1 0 Tj - Junction Temperature (°C) 20 -ID - Drain Current (A) 0.8 0.4 0.2 0.0 1.2 0.1 1 10 Copyright ANPEC Electronics Corp. 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 2 0.01 1E-4 100 -VDS - Drain - Source Voltage (V) Rev. B.4 - Jun., 2005 2 Mounted on 1in pad o RθJA : 150 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM2801B Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 10 0.28 VGS= -3 thru -10V -2.5V RDS(ON) - On - Resistance (Ω) 8 -ID - Drain Current (A) -2V 6 4 2 0 VGS= -2.5V 0.24 0 1 2 3 0.20 0.16 0.12 0.08 0.04 4 VGS= -4.5V 0 2 4 6 8 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 6 1.8 10 IDS = -250µA 1.6 Normalized Threshold Voltage -ID - Drain Current (A) 5 4 3 2 o Tj=-55 C o 1 Tj=25 C o Tj=125 C 1.0 0.8 0.6 0.4 0.0 -50 -25 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. 1.2 0.2 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Rev. B.4 - Jun., 2005 1.4 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM2801B Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 1.8 6 VGS = -4.5V IDS = -1.5A 1.4 o Tj=150 C -IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 0.6 0.4 o Tj=25 C 1 0.2 o RON@Tj=25 C: 145mΩ 0.0 -50 -25 0 25 50 0.1 0.0 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 5 500 Frequency=1MHz -VGS - Gate - source Voltage (V) VDS=-10 V 400 C - Capacitance (pF) 0.2 Ciss 300 200 100 Coss IDS=-1.5 A 4 3 2 1 Crss 0 0 0 4 8 12 16 20 Copyright ANPEC Electronics Corp. 1 2 3 4 5 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Rev. B.4 - Jun., 2005 0 6 www.anpec.com.tw APM2801B Typical Characteristics (Cont.) SBD IF - VF IR - VR 0.1 0.01 75 o 5 C 0 oC 1 IR - Reverse Current (A) o C 125 T A= o C 25 T A= 0.1 10 o 0C IF - Forward Current (A) 6 o 150 C 1E-3 o 100 C o 75 C 1E-4 o 50 C 1E-5 o TA=25 C 1E-6 0.01 0.0 0.2 0.4 0.6 0.8 1E-7 1.0 VF - Forward Voltage (V) 0 3 6 9 12 15 VR - Reverse Voltage (V) C - VR 200 C - Capacitance (pF) Frequency=1MHz 150 100 50 0 0 5 10 15 20 25 VR - Reverse Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.4 - Jun., 2005 7 www.anpec.com.tw APM2801B Packaging Information SOT-23-5 e1 5 4 E1 1 2 E 3 e b D A2 A a A1 Dim A A1 A2 b D E E1 e e1 L L1 L2 N α L Millimeters Min. 0.95 0.05 0.90 0.30 2.8 2.6 1.5 Inches Max. 1.45 0.15 1.30 0.50 3.00 3.00 1.70 Min. 0.037 0.002 0.035 0.011 0.110 0.102 0.059 0.35 0.55 0.014 0.20 BSC 0.5 0.022 0.008 BSC 0.7 0.020 5 0° Max. 0.057 0.006 0.051 0.019 0.118 0.118 0.067 0.037BSC 0.074BSC 0.95BSC 1.90BSC Copyright ANPEC Electronics Corp. Rev. B.4 - Jun., 2005 L2 L1 0.028 5 10° 8 0° 10° www.anpec.com.tw APM2801B Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Time Classificatin Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.4 - Jun., 2005 9 www.anpec.com.tw APM2801B Classificatin Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s Package Thickness Volume mm 3 Volume mm 3 <350 ≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures Package Thickness Volume mm 3 Volume mm 3 Volume mm 3 <350 350-2000 >2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.4 - Jun., 2005 D1 10 Ko www.anpec.com.tw APM2801B Carrier Tape & Reel Dimensions (Cont.) T2 J C A B T1 Application A 178±1 SOT-23-5 F B C J 72 ± 1.0 13.0 + 0.2 2.5 ± 0.15 D 3.5 ± 0.05 1.5 +0.1 D1 Po 1.5 +0.1 4.0 ± 0.1 T1 T2 P E 1.5± 0.3 W 8.0+ 0.3 - 0.3 8.4 ± 2 4 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 1.4± 0.1 0.2±0.03 2.0 ± 0.1 3.15 ± 0.1 3.2± 0.1 (mm) Cover Tape Dimensions Application SOT-23-5 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.4 - Jun., 2005 11 www.anpec.com.tw