ANPEC APM4550K

APM4550K
Dual Enhancement Mode MOSFET (N- and P-Channel)
Pin Description
Features
•
N-Channel
30V/7A,
RDS(ON) = 20mΩ (typ.) @ VGS = 10V
RDS(ON) = 30mΩ (typ.) @ VGS = 4.5V
•
P-Channel
Top View of SOP − 8
-30V/-5A,
RDS(ON) = 40mΩ (typ.) @ VGS = -10V
(7) (8)
D1 D1
RDS(ON) = 62mΩ (typ.) @ VGS = -4.5V
•
•
•
Super High Dense Cell Design
Reliable and Rugged
(4)
G2
Lead Free Available (RoHS Compliant)
(2)
G1
Applications
•
(3)
S2
S1
(1)
Power Management in Notebook Computer,
D2
(5)
Portable Equipment and Battery Powered
N-Channel
Systems
D2
(6)
P-Channel
Ordering and Marking Information
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150°C
Handling Code
TR : Tape & Reel
TU : Tube
Lead Free Code
L : Lead Free Device
APM4550
Lead Free Code
Handling Code
Temp. Range
Package Code
APM4550K :
APM4550
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - May, 2007
1
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APM4550K
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
N Channel
P Channel
VDSS
Drain-Source Voltage
30
-30
VGSS
Gate-Source Voltage
±20
±20
7
-5
ID*
Continuous Drain Current
IDM*
300µs Pulsed Drain Current
30
-20
IS*
Diode Continuous Forward Current
2.5
-2
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD*
Power Dissipation
VGS=±10V
Parameter
A
A
°C
-55 to 150
TA=25°C
2
TA=100°C
0.8
Thermal Resistance-Junction to Ambient
2
Note: *Surface Mounted on 1in pad area, t ≤ 10sec.
Symbol
V
150
RθJA*
Electrical Characteristics
Unit
W
°C/W
62.5
(TA = 25°C unless otherwise noted)
APM4550K
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
Drain-Source Breakdown
Voltage
BVDSS
VGS=0V, IDS=250µA
N-Ch
30
VGS=0V, IDS=-250µA
P-Ch
-30
VDS=24V, VGS=0V
Zero Gate Voltage Drain
Current
IDSS
V
1
N-Ch
30
TJ=85°C
VDS=-24V, VGS=0V
-1
P-Ch
-30
TJ=85°C
VGS(th)
Gate Threshold Voltage
IGSS
RDS(ON)
Gate Leakage Current
a
Drain-Source On-State
Resistance
Copyright  ANPEC Electronics Corp.
Rev. A.1 - May, 2007
VDS=VGS, IDS=250µA
N-Ch
1
1.5
2
VDS=VGS, IDS=-250µA
P-Ch
-1
-1.5
-2
VGS=±20V, VDS=0V
N-Ch
±100
P-Ch
±100
VGS=10V, IDS=7A
N-Ch
20
27.5
VGS=-10V, IDS=-5A
P-Ch
40
50
VGS=4.5V, IDS=5A
N-Ch
30
40
VGS=-4.5V, IDS=-4A
P-Ch
62
80
2
µA
V
nA
mΩ
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APM4550K
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25°C unless otherwise noted)
APM4550K
Test Condition
Min.
Typ.
Max.
Unit
Diode Characteristics
VSD
a
Diode Forward Voltage
ISD=2.5A, V GS=0V
N-Ch
0.8
1.3
ISD=-2A, V GS=0V
P-Ch
-0.8
-1.3
trr
Reverse Recovery Time
N-Channel
ISD=7A, dlSD/dt=100A/µs
N-Ch
8
P-Ch
13
Q rr
Reverse Recovery
Charge
N-Channel
ISD=-5A, dlSD/dt=100A/µs
N-Ch
3
P-Ch
5
N-Ch
2
P-Ch
8.3
N-Channel
VGS=0V,
VDS=15V,
Frequency=1.0MHz
N-Ch
620
P-Ch
590
N-Ch
85
P-Channel
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
P-Ch
95
N-Ch
65
P-Ch
70
N-Ch
6
11
P-Ch
5
9
N-Ch
10
18
P-Ch
12
23
N-Ch
22
41
P-Ch
27
50
N-Ch
3
6
P-Ch
13
24
N-Channel
VDS=15V, V GS=10V,
IDS=7A
N-Ch
14
19
P-Ch
11
15
N-Ch
1.4
P-Channel
VDS=-15V, V GS=-10V,
IDS=-5A
P-Ch
1.3
N-Ch
2.6
P-Ch
2.7
Dynamic Characteristics
Gate Resistance
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer
Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
Tf
ns
nC
b
RG
td(OFF)
V
VGS=0V,V DS=0V,F=1MHz
N-Channel
VDD=15V, R L=15Ω,
IDS=1A, V GEN=10V,
R G=6Ω
Turn-off Delay Time
P-Channel
VDD=-15V, R L=15Ω,
IDS=-1A, V GEN=-10V,
R G=6Ω
Turn-off Fall Time
Gate Charge Characteristics
Ω
pF
ns
b
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
nC
Notes:
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - May, 2007
3
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APM4550K
Typical Characteristics
N-Channel
Drain Current
Power Dissipation
8
2.5
7
2.0
ID - Drain Current (A)
Ptot - Power (W)
6
1.5
1.0
5
4
3
2
0.5
1
o
o
TA=25 C
0.0
0
20
TA=25 C,VG=10V
40
60
0
80 100 120 140 160
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Lim
it
10
Rd
s(o
n)
ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
100
300µs
1ms
1
10ms
100ms
0.1
1s
DC
O
TA=25 C
0.01
0.01
0
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - May, 2007
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM4550K
Typical Characteristics (Cont.)
N-Channel
Output Characteristics
30
Drain-Source On Resistance
50
VGS= 4.5,5,6,7,8,9,10V
27
4V
RDS(ON) - On - Resistance (mΩ)
45
ID - Drain Current (A)
24
21
18
15
3.5V
12
9
3V
6
40
VGS=4.5V
35
30
25
VGS=10V
20
15
10
3
2.5V
0
0.0
5
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
30
IDS=250µΑ
ID=7A
1.4
Normalized Threshold Voltage
45
RDS(ON) - On - Resistance (mΩ)
25
VDS - Drain-Source Voltage (V)
50
40
35
30
25
20
15
10
20
1.2
1.0
0.8
0.6
0.4
0.2
2
3
4
5
6
7
8
9
0.0
-50 -25
10
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - May, 2007
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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APM4550K
Typical Characteristics (Cont.)
N-Channel
Drain-Source On Resistance
Source-Drain Diode Forward
2.00
30
VGS = 10V
IDS = 7A
10
o
Tj=150 C
1.50
IS - Source Current (A)
Normalized On Resistance
1.75
1.25
1.00
0.75
0.50
o
Tj=25 C
1
0.25
o
0.00
-50 -25
[email protected]=25 C: 20mΩ
0
25
50
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1000
10
Frequency=1MHz
VDS=15V
900
VGS - Gate - source Voltage (V)
9
C - Capacitance (pF)
800
700
Ciss
600
500
400
300
200
100
0
Coss
IDS=7A
8
7
6
5
4
3
2
1
Crss
0
0
5
10
15
20
25
30
2
4
6
8
10
12
14
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - May, 2007
0
6
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APM4550K
Typical Characteristics (Cont.)
P-Channel
Power Dissipation
Drain Current
6
2.5
5
-ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
0.5
4
3
2
1
o
0.0
o
TA=25 C
0
20
40
60
0
80 100 120 140 160
40
60
80 100 120 140 160
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
-ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
300µs
1ms
1
10ms
100ms
1s
0.1
DC
O
TA=25 C
0.01
0.01
0
Tj - Junction Temperature (°C)
50
10
TA=25 C,VG=-10V
0.1
1
10
Duty = 0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - May, 2007
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
7
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APM4550K
Typical Characteristics (Cont.)
P-Channel
Output Characteristics
Drain-Source On Resistance
20
90
RDS(ON) - On - Resistance (mΩ)
18
100
VGS=-4.5-5,-6,-7 -8,-9,-10V -4V
-ID - Drain Current (A)
16
-3.5V
14
12
10
-3V
8
6
4
-2.5V
80
VGS=-4.5V
70
60
50
VGS=-10V
40
30
20
2
-2V
0
0.0
0.5
1.0
1.5
2.0
2.5
10
3.0
8
12
16
-ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
ID=-5A
90
20
IDS= -250µΑ
1.4
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)
4
-VDS - Drain - Source Voltage (V)
100
80
70
60
50
40
30
20
0
2
3
4
5
6
7
8
9
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
10
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - May, 2007
1.2
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
8
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APM4550K
Typical Characteristics (Cont.)
P-Channel
Drain-Source On Resistance
Source-Drain Diode Forward
20
2.0
VGS = -10V
IDS = -5A
10
1.6
-IS - Source Current (A)
Normalized On Resistance
1.8
1.4
1.2
1.0
0.8
0.6
o
Tj=150 C
o
Tj=25 C
1
0.4
o
[email protected]=25 C: 40mΩ
0.2
-50 -25
0
25
50
75
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
100 125 150
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
800
Frequency=1MHz
VDS= -15V
9
C - Capacitance (pF)
600
-VGS - Gate - source Voltage (V)
700
Ciss
500
400
300
200
100
0
Coss
Crss
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
0
2
4
6
8
10
12
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - May, 2007
IDS= -5A
9
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APM4550K
Package Information
SOP-8
D
E
E1
SEE VIEW A
h X 45
°
c
A
0.25
b
A2
e
L
0
A1
GAUGE PLANE
SEATING PLANE
VIEW A
S
Y
M
B
O
L
SOP-8
MILLIMETERS
MIN.
INCHES
MAX.
A
MIN.
MAX.
1.75
0.069
0.004
0.25
0.010
A1
0.10
A2
1.25
b
0.31
0.51
0.012
0.020
c
0.17
0.25
0.007
0.010
0.049
D
4.90 BSC
0.193 BSC
E
6.00 BSC
0.236 BSC
E1
3.90 BSC
0.154 BSC
e
1.00 BSC
0.050 BSC
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
0
0°
8°
0°
Copyright  ANPEC Electronics Corp.
Rev. A.1 - May, 2007
10
8°
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APM4550K
Carrier Tape & Reel Dimensions
t
D
P
Po
E
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
SOP-8
A
330±1
B
62 ± 1.5
C
12.75 +
0.1 5
J
2 + 0.5
T1
12.4 +0.2
T2
2± 0.2
F
D
D1
Po
P1
Ao
5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1
W
12 + 0.3
- 0.1
Bo
5.2± 0.1
P
8± 0.1
E
1.75± 0.1
Ko
t
2.1± 0.1 0.3±0.013
(mm)
Devices Per Reel
Package Type
SOP- 8
Devices Per Reel
2500
Copyright  ANPEC Electronics Corp.
Rev. A.1 - May, 2007
11
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APM4550K
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Tim e
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Time 25°C to Peak Temperature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Notes: All temperatures refer to topside of the package. Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - May, 2007
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APM4550K
Classification Reflow Profiles (Cont.)
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
3
Volume mm
≥350
3
Package Thickness
Volume mm
<350
<2.5 mm
240 +0/-5°C
225 +0/-5°C
≥2.5 mm
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
<350
Volume mm
350-2000
Volume mm
>2000
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
* Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated
classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL
level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
ESD
Latch-Up
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B,A102
MIL-STD-883D-1011.9
MIL-STD-883D-3015.7
JESD 78
Description
245°C, 5 SEC
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C
-65°C~150°C, 200 Cycles
VHBM > 2KV, VMM > 200V
10ms, 1tr > 100mA
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pao Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.1 - May, 2007
13
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