ANPEC APM3055LUC-TU

APM3055LU
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
30V/20A,
RDS(ON)=75mΩ (typ.) @ VGS=10V
RDS(ON)=100mΩ (typ.) @ VGS=4.5V
•
•
•
G
D
Super High Dense Cell Design
S
Reliable and Rugged
Top View of TO-252
Lead Free Available (RoHS Compliant)
D
Applications
•
Power Management in Desktop Computer or
G
DC/DC Converters
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150° C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM3055L
Lead Free Code
Handling Code
Temp. Range
Package Code
APM3055L U :
XXXXX - Date Code
APM3055L
XXXXX
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
1
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APM3055LU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
TJ
TSTG
IS
Storage Temperature Range
V
°C
-55 to 150
Diode Continuous Forward Current
TC=25°C
8
TC=25°C
50
TC=100°C
30
TC=25°C
20
TC=100°C
12
TC=25°C
50
TC=100°C
20
A
Mounted on Large Heat Sink
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJC
2.5
Thermal Resistance-Junction to Case
A
W
°C/W
2
Mounted on PCB of 1in Pad Area
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
TA=25°C
50
TA=100°C
30
TA=25°C
4
TA=100°C
3
TA=25°C
2.5
TA=100°C
1
Thermal Resistance-Junction to Ambient
50
A
W
°C/W
Mounted on PCB of Minimum Footprint
IDP
300µs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
Thermal Resistance-Junction to Ambient
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
2
TA=25°C
50
TA=100°C
30
TA=25°C
3
TA=100°C
2
TA=25°C
1.6
TA=100°C
0.6
75
A
W
°C/W
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APM3055LU
Electrical Characteristics
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Test Condition
APM3055LU
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
IDSS
VGS(th)
IGSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
Zero Gate Voltage Drain Current
V
VDS=24V, VGS=0V
1
TJ=85°C
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
RDS(ON) a Drain-Source On-state Resistance
30
30
1
1.5
µA
2
V
±100
nA
VGS=10V, IDS=12A
75
100
VGS=4.5V, IDS=6A
100
200
ISD=6A, VGS=0V
0.7
1.3
VGS=0V,VDS=0V,F=1MHz
2.6
mΩ
Diode Characteristics
VSDa
Diode Forward Voltage
V
Dynamic Characteristicsb
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
230
pF
60
30
4
7
11
22
15
21
3
5
6.2
8.5
ns
b
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
Qg
VGS=0V,
VDS=15V,
Frequency=1.0MHz
Ω
VDS=15V, VGS=10V,
IDS=12A
1.2
nC
1.2
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
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APM3055LU
Typical Characteristics
Power Dissipation
Drain Current
60
25
20
ID - Drain Current (A)
Ptot - Power (W)
50
40
30
20
15
10
5
10
o
0
o
TC=25 C
0
20 40
0
60 80 100 120 140 160 180
TC=25 C,VG=10V
0
20 40
Tj - Junction Temperature
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
10
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
100
ID - Drain Current (A)
60 80 100 120 140 160 180
1ms
10ms
100ms
1s
DC
1
o
TC=25 C
0.1
0.1
1
10
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
2
0.01
1E-4
Mounted on 1in pad
o
RθJA : 50 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM3055LU
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
130
20
120
VGS= 6, 7, 8, 9, 10V
RDS(ON) - On - Resistance (mΩ)
ID - Drain Current (A)
16
5V
12
8
4V
4
VGS=4.5V
110
100
90
80
VGS=10V
70
60
50
40
3V
0
0
1
2
3
4
30
5
0
4
8
12
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
20
1.4
Tj=-55 C
1.2
Normalized Threshold Voltage
16
ID - Drain Current (A)
o
Tj=25 C
o
Tj=125 C
12
8
4
0
1
2
3
4
5
6
7
Copyright  ANPEC Electronics Corp.
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
8
VGS - Gate - Source Voltage (V)
Rev. B.3 - Oct., 2005
20
IDS =250µA
o
0
16
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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APM3055LU
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
20
2.0
VGS = 10V
IDS = 12A
1.6
10
1.4
o
IS - Source Current (A)
Normalized On Resistance
1.8
1.2
1.0
0.8
0.6
0.4
0.2
Tj=150 C
o
Tj=25 C
o
0.0
-50 -25
[email protected]=25 C: 75mΩ
0
25
50
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
400
10
Frequency=1MHz
VGS - Gate-source Voltage (V)
300
C - Capacitance (pF)
VDS= 15V
9
350
250
Ciss
200
150
100
Coss
50
8
7
6
5
4
3
2
0
0
ID = 12A
1
Crss
0
1.6
5
10
15
20
25
30
Rev. B.3 - Oct., 2005
1
2
3
4
5
6
7
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
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APM3055LU
Package Information
TO-252 (Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
D1
A1
E1
Dim
Millimeters
Inches
Min.
Max.
Min.
Max.
2.18
2.39
0.086
0.094
A1
0.89
1.27
0.035
0.050
b
0.508
0.89
0.020
0.035
b2
5.207
5.461
0.205
0.215
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.334
6.22
0.210
0.245
A
D1
E
5.2 REF
6.35
E1
0.205 REF
6.73
0.250
5.3 REF
0.265
0.209 REF
e1
3.96
5.18
0.156
0.204
H
9.398
10.41
0.370
0.410
L
0.51
L1
0.64
1.02
0.025
0.040
L2
0.89
2.032
0.035
0.080
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
0.020
7
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APM3055LU
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Time
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (T L)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
8
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APM3055LU
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s
Package Thickness
Volume mm 3
Volume mm 3
<350
≥350
<2.5 mm
240 +0/-5°C
225 +0/-5°C
≥2.5 mm
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm 3
Volume mm 3
Volume mm 3
<350
350-2000
>2000
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B,A102
MIL-STD-883D-1011.9
Description
245°C, 5 SEC
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C
-65°C~150°C, 200 Cycles
Carrier Tape
t
D
P
Po
E
P1
Bo
F
W
Ko
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
D1
9
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APM3055LU
Carrier Tape(Cont.)
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
330 ±3
100 ± 2
13 ± 0. 5
2 ± 0.5
F
D
D1
Po
7.5 ± 0.1
1.5 +0.1
T1
T2
16.4 + 0.3 2.5± 0.5
-0.2
1.5± 0.25 4.0 ± 0.1
W
16+ 0.3
- 0.1
P
E
8 ± 0.1
1.75± 0.1
P1
Ao
Bo
Ko
t
2.0 ± 0.1
6.8 ± 0.1
10.4± 0.1
2.5± 0.1
0.3±0.05
(mm)
Cover Tape Dimensions
Application
TO- 252
Carrier Width
16
Cover Tape Width
13.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
10
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