ON Semiconductor SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The BUT33 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications such as: • • • • • • AC and DC Motor Controls Switching Regulators Inverters Solenoid and Relay Drivers Fast Turn Off Times 800 ns Inductive Fall Time at 25C (Typ) 2.0 µs Inductive Storage Time at 25C (Typ) Operating Temperature Range –65 to 200C BUT33 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS CASE 197A–05 TO–204AE (TO–3) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ≈ 100 ≈ 16 MAXIMUM RATINGS Rating Symbol BUT33 Unit Collector–Emitter Voltage VCEO(sus) 400 Vdc Collector–Emitter Voltage VCEV 600 Vdc Emitter Base Voltage VEB 10 Vdc Collector Current — Continuous Collector Current — Peak (1) IC ICM 56 75 Adc Base Current — Continuous Base Current — Peak (1) IB IBM 12 15 Adc Free Wheel Diode Forward Current — Continuous Free Wheel Diode Forward Current — Peak IF IFM 56 75 Adc Total Power Dissipation @ TC = 25C @ TC = 100C Derate above 25C PD 250 140 Watts W/C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +200 C Symbol Max Unit RθJC 0.7 C/W TL 275 C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purpose 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 9 1 Publication Order Number: BUT33/D BUT33 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 400 — — Vdc — — — — 0.2 4.0 — — 350 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100C) ICEV Emitter Cutoff Current (VEB = 20 V, IC = 0) IEBO mAdc mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 16 RBSOA See Figure 17 ON CHARACTERISTICS (1) DC Current Gain (IC = 20 A, VCE = 5 V) (IC = 36 A, VCE = 5 V) hFE 30 20 — — — — — — — — — — — — 2.0 2.5 3.0 5.0 — — — — — — 2.5 2.9 3.3 Vf — — 4.0 Vdc IC = 36 A ts — 2.0 3.3 µs IB = 3.6 A tf — 0.8 1.6 µs ts — 2.2 — µs tf — 0.8 — µs Collector–Emitter Saturation Voltage (IC = 20 A, IB = 1 A) (IC = 36 A, IB = 3.6 A) (IC = 44 A, IB = 4.4 A) (IC = 56 A, IB = 11.2 A) VCE(sat) Base–Emitter Saturation Voltage (IC = 20 A, IB = 1 A) (IC = 36 A, IB = 3.6 A) (IC = 44 A, IB = 4.4 A) VBE(sat) Diode Forward Voltage (IF = 44 A) Vdc Vdc SWITCHING CHARACTERISTICS Inductive Load Clamped (Table 1) Storage Time TC = 25C Fall Time Storage Time Fall Time See Table 1 TC = 100C VBE(off) = 5 V (1) Pulse Test: PW = 300 µs, Duty Cycle 2%. http://onsemi.com 2 BUT33 400 hFE , DC CURRENT GAIN 200 100 50 30 20 10 5 TC = 25°C VCE = 5.0 V 3 2 1 2 1 3 4 6 10 20 IC, COLLECTOR CURRENT (AMPS) 30 40 60 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS 4 3 IC = 40 A 2 IC = 20 A 1 TC = 25°C 0 0.1 TC = 25°C IC/IB = 10 2.5 2.2 1.9 1.6 1.3 1.0 0.7 0.4 1 RESISTANCE (NORMALIZED) 1 0.7 0.5 2 0.02 0.01 0.01 7 10 20 7 10 30 2.8 2.5 2.2 1.9 1.6 1.3 1.0 50 TC = 25°C IC/IB = 10 3.2 2 1 3 5 7 10 20 30 IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector–Emitter Saturation Voltage Figure 4. Base–Emitter Voltage 50 D = 0.5 0.3 0.03 5 5 IC, COLLECTOR CURRENT (AMPS) 0.2 0.2 0.1 0.07 0.05 3 0.5 1 2 3 IB, BASE CURRENT (AMPS) Figure 2. Collector Saturation Region VBE, BASE-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 0.2 0.3 0.1 0.02 0.01 SINGLE PULSE 0.02 0.03 0.05 P(pk) RθJC(t) = r(t) RθJC RθJC(t) = 1.17°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RθJC(t) 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 Figure 5. Thermal Response http://onsemi.com 3 20 30 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 BUT33 Table 1. Test Conditions for Dynamic Performance VCEO(sus) INPUT CONDITIONS 20 Ω 0 RBSOA AND INDUCTIVE SWITCHING 5V 220 TEST CIRCUITS D3 MM3735 22 680 pF PULSES δ = 3% 680 pF TUT Vclamp RS = 0.1 Ω D3 + Ib2 ADJUST dTb ADJUST dT MR854 ID 2N6339 22 µF VD DRIVER VCC OUTPUT WAVEFORMS Rcoil 1N4937 OR EQUIVALENT D4 160 33 2W Lcoil = 180 µH Rcoil = 0.05 Ω VCC = 10 V MR854 Ib1 ADJUST 1 µF 22 2N3763 100 INDUCTIVE TEST CIRCUIT 2 160 +10 V 2N6438 D1D2D3D4 1N4934 Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Ω Vclamp = VCEO(sus) INPUT SEE ABOVE FOR DETAILED CONDITIONS 22 µF 680 pF PW Varied to Attain IC = 100 mA CIRCUIT VALUES 100 2 1 D1 33 2W 1 TEST CIRCUIT for FREE–WHEEL DIODE IC t1 Lcoil VCC VCE t1 Adjusted to Obtain IC tf Clamped ICM t tf VCEM t2 http://onsemi.com 4 t1 t2 Vclamp TIME AV up to 50 V t Lcoil (ICM) VCC Lcoil (ICM) Vclamp Test Equipment Scope — Tektronix 475 or Equivalent CRONETICS PG130 up to 50 V 5 µs 1% 510 VD ID BUT33 15 10 TC = 25°C IC/IB = 5 3 2 IC = 50 A 1 40°C 0.5 0.1 1 2 3 4 5 Ib2/Ib1 VBE(off) = 5 V 0.5 VBE(off) = 5 V 0.2 6 7 8 9 0.1 10 IC/IB = 10 tF 2 1 3 5 7 10 20 IC, COLLECTOR CURRENT (AMPS) 30 50 10 8 TC = 25°C IC/IB = 5 8 IC = 25 A 6 6 5 4 t, TIME (s) µ t, TIME (s) µ 10 V Figure 7. Turn–Off Time versus IC 10 IC = 50 A 3 1 tS 10 V 1 Figure 6. Fall Time versus IB2/IB1 2 TC = 25°C IC/IB = 20 0.3 IC = 25 A 0.3 0.2 σtF = 200 ns IC = 20 A σt = 400 ns S 2 t, TIME (s) µ 5 t, TIME (s) µ 5 4 3 5 4 3 TC = 25°C VBE(off) = 5 V 1 2 2 3 4 5 6 7 8 9 1 10 IC = 25 A IC = 50 A 1 2 IC = 10 A 3 4 5 6 7 8 βf, FORCED GAIN Ib2/Ib1 Figure 8. Storage Time versus Forced Gain Figure 9. Storage Time versus Ib2/Ib1 http://onsemi.com 5 9 10 BUT33 FREE–WHEEL DIODE CHARACTERISTICS 50 IFM Id 1 0 VD 25 IRM t IRM trr DYN -σ di/dt = 25 A/µs 10 (VDYN VFM) VFM IE , EMITTER CURRENT (AMPS) I TFR 40 30 20 10 0 TC = 25°C 0 1 2 3 4 VEC, EMITTER COLLECTOR VOLTAGE (VOLTS) 25 20 15 10 5 0 40°C 0 10 20 30 IE, EMITTER CURRENT (AMPS) TC = 25°C 50 40 5 Figure 11. Forward Voltage I RM , PEAK REVERSE RECOVERY CURRENT (AMPS) Vdyn , FORWARD MODULATION VOLTAGE (VOLTS) Figure 10. Free Wheel Diode Measurements 30 +σ 50 TC = 25°C 40 30 20 10 0 0 Figure 12. Forward Modulation Voltage 10 20 30 IE, EMITTER CURREMT (AMPS) 40 50 Figure 13. Peak Reverse Recovery Current 2.2 TRR, REVERSE RECOVERY TIME (s) µ TFR , FORWARD RECOVERY TIME (s) µ 15 TC = 25°C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 IE, EMITTER CURRENT (AMPS) 40 10 5 3 2 1 0.7 0.5 0.3 50 TC = 25°C 7 0 Figure 14. Forward Recovery Time 10 20 30 IE, EMITTER CURRENT (AMPS) 40 Figure 15. Reverse Recovery Time http://onsemi.com 6 50 BUT33 IC, COLLECTOR CURRENT (AMPS) The Safe Operating Area figures shown in Figures 16 and 17 are specified for the devices under the test conditioned shown. 60 10 µs 100 µs 30 10 SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subject to greater dissipation than the curves indicate. The data of Figure 16 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC y 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 16 may be found at any case temperature by using the appropriate curve on Figure 18. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1 ms DC 3.0 1.0 0.5 0.3 TC = 25°C 0.1 1 300 5 10 30 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 16. Safe Operating Area ICM , PEAK COLLECTOR CURRENT (AMPS) 60 REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode Figure 17 gives the RBSOA characteristics. 40 20 VBE(off) = 5 V TC = 25°C IC/IB = 10 0 200 400 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 17. Reverse Bias Safe Operating Area 100 POWER DERATING (FACTOR) 0 80 SECOND BREAKDOWN DERATING 60 THERMAL DERATING 40 20 0 0 40 80 120 IC, CASE TEMPERATURE (°C) Figure 18. Power Derating http://onsemi.com 7 160 200 BUT33 PACKAGE DIMENSIONS TO–204 AE (TO–3) CASE 197A–05 ISSUE J A N C –T– E D U SEATING PLANE K 2 PL 0.30 (0.012) V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. T Q M M Y DIM A B C D E G H K L N Q U V M –Y– L 2 H G B M T Y 1 INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 –Q– 0.25 (0.010) M SWITCHMODE is a trademark of ON Semiconductor, Inc. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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