ETC BUT33/D

ON Semiconductor
SWITCHMODE Series
NPN Silicon Power Darlington
Transistors with Base-Emitter
Speedup Diode
The BUT33 Darlington transistor is designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is
critical. They are particularly suited for line operated SWITCHMODE
applications such as:
•
•
•
•
•
•
AC and DC Motor Controls
Switching Regulators
Inverters
Solenoid and Relay Drivers
Fast Turn Off Times
800 ns Inductive Fall Time at 25C (Typ)
2.0 µs Inductive Storage Time at 25C (Typ)
Operating Temperature Range –65 to 200C
BUT33
56 AMPERES
NPN SILICON
POWER DARLINGTON
TRANSISTOR
600 VOLTS
250 WATTS
CASE 197A–05
TO–204AE
(TO–3)
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≈ 100
≈ 16
MAXIMUM RATINGS
Rating
Symbol
BUT33
Unit
Collector–Emitter Voltage
VCEO(sus)
400
Vdc
Collector–Emitter Voltage
VCEV
600
Vdc
Emitter Base Voltage
VEB
10
Vdc
Collector Current — Continuous
Collector Current — Peak (1)
IC
ICM
56
75
Adc
Base Current — Continuous
Base Current — Peak (1)
IB
IBM
12
15
Adc
Free Wheel Diode Forward Current — Continuous
Free Wheel Diode Forward Current — Peak
IF
IFM
56
75
Adc
Total Power Dissipation @ TC = 25C
@ TC = 100C
Derate above 25C
PD
250
140
Watts
W/C
Operating and Storage Junction Temperature Range
TJ, Tstg
–65 to +200
C
Symbol
Max
Unit
RθJC
0.7
C/W
TL
275
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purpose
1/8″ from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
1
Publication Order Number:
BUT33/D
BUT33
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
400
—
—
Vdc
—
—
—
—
0.2
4.0
—
—
350
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 100 mA, IB = 0)
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100C)
ICEV
Emitter Cutoff Current
(VEB = 20 V, IC = 0)
IEBO
mAdc
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with Base Reverse Biased
IS/b
See Figure 16
RBSOA
See Figure 17
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 20 A, VCE = 5 V)
(IC = 36 A, VCE = 5 V)
hFE
30
20
—
—
—
—
—
—
—
—
—
—
—
—
2.0
2.5
3.0
5.0
—
—
—
—
—
—
2.5
2.9
3.3
Vf
—
—
4.0
Vdc
IC = 36 A
ts
—
2.0
3.3
µs
IB = 3.6 A
tf
—
0.8
1.6
µs
ts
—
2.2
—
µs
tf
—
0.8
—
µs
Collector–Emitter Saturation Voltage
(IC = 20 A, IB = 1 A)
(IC = 36 A, IB = 3.6 A)
(IC = 44 A, IB = 4.4 A)
(IC = 56 A, IB = 11.2 A)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 20 A, IB = 1 A)
(IC = 36 A, IB = 3.6 A)
(IC = 44 A, IB = 4.4 A)
VBE(sat)
Diode Forward Voltage
(IF = 44 A)
Vdc
Vdc
SWITCHING CHARACTERISTICS
Inductive Load Clamped (Table 1)
Storage Time
TC = 25C
Fall Time
Storage Time
Fall Time
See Table 1
TC = 100C
VBE(off) = 5 V
(1) Pulse Test: PW = 300 µs, Duty Cycle 2%.
http://onsemi.com
2
BUT33
400
hFE , DC CURRENT GAIN
200
100
50
30
20
10
5
TC = 25°C
VCE = 5.0 V
3
2
1
2
1
3 4
6
10
20
IC, COLLECTOR CURRENT (AMPS)
30 40
60
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS
4
3
IC = 40 A
2
IC = 20 A
1
TC = 25°C
0
0.1
TC = 25°C
IC/IB = 10
2.5
2.2
1.9
1.6
1.3
1.0
0.7
0.4
1
RESISTANCE (NORMALIZED)
1
0.7
0.5
2
0.02
0.01
0.01
7
10
20
7
10
30
2.8
2.5
2.2
1.9
1.6
1.3
1.0
50
TC = 25°C
IC/IB = 10
3.2
2
1
3
5
7
10
20
30
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector–Emitter Saturation Voltage
Figure 4. Base–Emitter Voltage
50
D = 0.5
0.3
0.03
5
5
IC, COLLECTOR CURRENT (AMPS)
0.2
0.2
0.1
0.07
0.05
3
0.5
1
2 3
IB, BASE CURRENT (AMPS)
Figure 2. Collector Saturation Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
0.2 0.3
0.1
0.02
0.01
SINGLE PULSE
0.02 0.03
0.05
P(pk)
RθJC(t) = r(t) RθJC
RθJC(t) = 1.17°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
Figure 5. Thermal Response
http://onsemi.com
3
20
30
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1000
BUT33
Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
INPUT
CONDITIONS
20 Ω
0
RBSOA AND INDUCTIVE SWITCHING
5V
220
TEST CIRCUITS
D3
MM3735
22
680 pF
PULSES
δ = 3%
680 pF
TUT
Vclamp
RS =
0.1 Ω
D3
+
Ib2 ADJUST
dTb ADJUST
dT
MR854
ID
2N6339
22 µF
VD
DRIVER
VCC
OUTPUT WAVEFORMS
Rcoil
1N4937
OR
EQUIVALENT
D4
160
33
2W
Lcoil = 180 µH
Rcoil = 0.05 Ω
VCC = 10 V
MR854
Ib1 ADJUST
1 µF
22
2N3763
100
INDUCTIVE TEST CIRCUIT
2
160
+10 V
2N6438
D1D2D3D4 1N4934
Lcoil = 10 mH, VCC = 10 V
Rcoil = 0.7 Ω
Vclamp = VCEO(sus)
INPUT
SEE ABOVE FOR
DETAILED CONDITIONS
22 µF
680 pF
PW Varied to Attain
IC = 100 mA
CIRCUIT
VALUES
100
2
1
D1
33
2W
1
TEST CIRCUIT
for
FREE–WHEEL
DIODE
IC
t1
Lcoil
VCC
VCE
t1 Adjusted to
Obtain IC
tf Clamped
ICM
t
tf
VCEM
t2
http://onsemi.com
4
t1 t2 Vclamp
TIME
AV
up to
50 V
t
Lcoil (ICM)
VCC
Lcoil (ICM)
Vclamp
Test Equipment
Scope — Tektronix
475 or Equivalent
CRONETICS
PG130
up to
50 V
5 µs
1%
510
VD
ID
BUT33
15
10
TC = 25°C
IC/IB = 5
3
2
IC = 50 A
1
40°C
0.5
0.1
1
2
3
4
5
Ib2/Ib1
VBE(off) = 5 V
0.5
VBE(off) = 5 V
0.2
6
7
8
9
0.1
10
IC/IB = 10
tF
2
1
3
5
7
10
20
IC, COLLECTOR CURRENT (AMPS)
30
50
10
8
TC = 25°C
IC/IB = 5
8
IC = 25 A
6
6
5
4
t, TIME (s)
µ
t, TIME (s)
µ
10 V
Figure 7. Turn–Off Time versus IC
10
IC = 50 A
3
1
tS
10 V
1
Figure 6. Fall Time versus IB2/IB1
2
TC = 25°C
IC/IB = 20
0.3
IC = 25 A
0.3
0.2
σtF = 200 ns
IC = 20 A σt = 400 ns
S
2
t, TIME (s)
µ
5
t, TIME (s)
µ
5
4
3
5
4
3
TC = 25°C
VBE(off) = 5 V
1
2
2
3
4
5
6
7
8
9
1
10
IC = 25 A
IC = 50 A
1
2
IC = 10 A
3
4
5
6
7
8
βf, FORCED GAIN
Ib2/Ib1
Figure 8. Storage Time versus Forced Gain
Figure 9. Storage Time versus Ib2/Ib1
http://onsemi.com
5
9
10
BUT33
FREE–WHEEL DIODE CHARACTERISTICS
50
IFM
Id
1
0
VD
25 IRM
t
IRM
trr
DYN
-σ
di/dt = 25 A/µs
10 (VDYN VFM)
VFM
IE , EMITTER CURRENT (AMPS)
I
TFR
40
30
20
10
0
TC = 25°C
0
1
2
3
4
VEC, EMITTER COLLECTOR VOLTAGE (VOLTS)
25
20
15
10
5
0
40°C
0
10
20
30
IE, EMITTER CURRENT (AMPS)
TC = 25°C
50
40
5
Figure 11. Forward Voltage
I RM , PEAK REVERSE RECOVERY CURRENT (AMPS)
Vdyn , FORWARD MODULATION VOLTAGE (VOLTS)
Figure 10. Free Wheel Diode Measurements
30
+σ
50
TC = 25°C
40
30
20
10
0
0
Figure 12. Forward Modulation Voltage
10
20
30
IE, EMITTER CURREMT (AMPS)
40
50
Figure 13. Peak Reverse Recovery Current
2.2
TRR, REVERSE RECOVERY TIME (s)
µ
TFR , FORWARD RECOVERY TIME (s)
µ
15
TC = 25°C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
10
20
30
IE, EMITTER CURRENT (AMPS)
40
10
5
3
2
1
0.7
0.5
0.3
50
TC = 25°C
7
0
Figure 14. Forward Recovery Time
10
20
30
IE, EMITTER CURRENT (AMPS)
40
Figure 15. Reverse Recovery Time
http://onsemi.com
6
50
BUT33
IC, COLLECTOR CURRENT (AMPS)
The Safe Operating Area figures shown in Figures 16 and 17 are
specified for the devices under the test conditioned shown.
60
10 µs
100 µs
30
10
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subject to greater
dissipation than the curves indicate.
The data of Figure 16 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC y 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 16 may be found at
any case temperature by using the appropriate curve on
Figure 18.
TJ(pk) may be calculated from the data in Figure 5. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown.
1 ms
DC
3.0
1.0
0.5
0.3
TC = 25°C
0.1
1
300
5
10
30
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
Figure 16. Safe Operating Area
ICM , PEAK COLLECTOR CURRENT (AMPS)
60
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage current condition allowable
during reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode Figure 17 gives the RBSOA
characteristics.
40
20
VBE(off) = 5 V
TC = 25°C
IC/IB = 10
0
200
400
600
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 17. Reverse Bias Safe Operating Area
100
POWER DERATING (FACTOR)
0
80
SECOND BREAKDOWN
DERATING
60
THERMAL
DERATING
40
20
0
0
40
80
120
IC, CASE TEMPERATURE (°C)
Figure 18. Power Derating
http://onsemi.com
7
160
200
BUT33
PACKAGE DIMENSIONS
TO–204 AE (TO–3)
CASE 197A–05
ISSUE J
A
N
C
–T–
E
D
U
SEATING
PLANE
K
2 PL
0.30 (0.012)
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
T Q
M
M
Y
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
M
–Y–
L
2
H
G
B
M
T Y
1
INCHES
MIN
MAX
1.530 REF
0.990
1.050
0.250
0.335
0.057
0.063
0.060
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
0.760
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
38.86 REF
25.15
26.67
6.35
8.51
1.45
1.60
1.53
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
19.31
21.08
3.84
4.19
30.15 BSC
3.33
4.77
–Q–
0.25 (0.010)
M
SWITCHMODE is a trademark of ON Semiconductor, Inc.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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