Spec. No. : C306A3-T Issued Date : 2003.08.26 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1015A3 Description • The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification. • High voltage and high current : VCEO=-50V(min), IC=-150mA(max) • High HFE and excellent linearity • Complementary to BTC1815A3. Symbol Outline BTA1015A3 TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature BTA1015A3 Symbol Limits Unit VCBO VCEO VEBO IC IB Pd RθJA Tj Tstg -50 -50 -5 -150 -50 400 250 125 -55~+125 V V V mA mA mW °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C306A3-T Issued Date : 2003.08.26 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCEO ICBO IEBO *VCE(sat) *VBE(sat) hFE 1 hFE 2 fT Cob Min. -50 70 25 80 - Typ. 80 - Max. -0.1 -0.1 -0.3 -1.1 400 Unit V µA µA V V - 7 MHz pF Test Conditions IC=-1mA VCB=-50V VEB=-5V IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA VCE=-10V, IC=-1mA VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 1 Rank Range BTA1015A3 O 70~140 Y 120~240 GR 200~400 CYStek Product Specification Spec. No. : C306A3-T Issued Date : 2003.08.26 CYStech Electronics Corp. Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Saturation Voltage---(mV) Current Gain---HFE HFE@VCE=6V 100 VCE(SAT)@IC=10IB 100 10 10 0.1 1 10 100 0.1 1000 10 100 1000 Collector Current---IC(mA) Collector Current---IC(mA) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current 1 Cutoff Frequency---FT(GHZ) 10000 Saturation Voltage---(mV) 1 VBE(SAT)@IC=10IB 1000 FT@VCE=12V 0.1 100 0.1 1 10 100 Collector Current---IC(mA) 1000 1 10 100 Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 450 400 350 300 250 200 150 100 50 0 0 50 100 150 Ambient Temperature --- Ta(℃ ) BTA1015A3 CYStek Product Specification Spec. No. : C306A3-T Issued Date : 2003.08.26 CYStech Electronics Corp. Revised Date : Page No. : 4/4 TO-92 Dimension Marking: α2 A B 1 2 3 A1015 α3 C D H I G Style: Pin 1.Emitter 2.Collector 3.Base α1 E 3-Lead TO-92 Plastic Package CYStek Package Code: A3 F *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1015A3 CYStek Product Specification