BD808 BD810 * Plastic High Power Silicon PNP Transistor *ON Semiconductor Preferred Device . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS • DC Current Gain — hFE = 30 (Min) @ IC = 2.0 Adc BD 808, 810 are complementary with BD 807, 890 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ • MAXIMUM RATINGS Symbol Type Value Unit Collector–Emitter Voltage Rating VCEO BD808 BD810 60 80 Vdc Collector–Base Voltage VCBO BD808 BD810 70 80 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc Total Device Dissipation TC = 25C Derate above 25C PD 90 720 Watts mW/C TJ, Tstg –55 to +150 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit θJC 1.39 C/W CASE 221A–06 TO–220AB ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Collector–Emitter Sustaining Voltage* (IC = 0.1 Adc, IB = 0) Symbol Type Min Max Unit BVCEO BD808 BD810 60 80 — — Vdc BD808 BD810 — — 1.0 1.0 — 2.0 30 15 — — Collector Cutoff Current (VCB = 70 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO DC Current Gain (IC = 2.0 A, VCE = 2.0 V) (IC = 4.0 A, VCE = 2.0 V) hFE mAdc mAdc Collector–Emitter Saturation Voltage* (IC = 3.0 Adc, IB = 0.3 Adc) VCE(sat) — 1.1 Vdc Base–Emitter On Voltage* (IC = 4.0 Adc, VCE = 2.0 Vdc) VBE(on) — 1.6 Vdc fT 1.5 — MHz Current–Gain Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2001 – Rev. 8 1 Publication Order Number: BD808/D BD808 BD810 3 dc TJ = 150°C 1 0.3 0.1 .5 ms 1 ms 1 ms 5 ms 10 PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMP) 90 BD808 BD810 3 10 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1 80 70 60 50 40 30 20 10 0 100 0 25 125 150 175 Figure 2. Power–Temperature Derating Curve 2.0 500 1.8 TJ = 25°C 300 1.6 VCE = 2.0 V TJ = 150°C 1.4 hFE, DC CURRENT GAIN VOLTAGE (VOLTS) 100 TC, CASE TEMPERATURE (°C) Figure 1. Active Region DC Safe Operating Area (see Note 1) 1.2 VBE(sat) @ IC/IB = 10 1.0 0.8 0.6 VCE(sat) @ IC/IB = 10 0.4 0 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 25°C 100 50 - 55°C 10 VBE @ VCE = 2.0 V 0.2 2.0 3.0 5.0 5.0 0.01 IC, COLLECTOR CURRENT (AMP) 0.05 0.1 0.5 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 3. “On” Voltages r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 75 50 1.0 0.7 0.5 0.01 0.01 Figure 4. Current Gain 0.2 0.1 SINGLE P(pk) PULSE 0.05 θJC(t) = r(t) θJC 0.02 0.03 0.02 10 D = 0.5 0.3 0.2 0.1 0.07 0.05 5.0 SINGLE PULSE 0.01 0.02 0.03 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) θJC(t) 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, PULSE WIDTH (ms) Figure 5. Thermal Response http://onsemi.com 2 20 30 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 BD808 BD810 The data of Figure 1 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Note 1: There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. http://onsemi.com 3 BD808 BD810 PACKAGE DIMENSIONS CASE 221A–06 TO–220AB ISSUE Y –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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