NEC 2SK3458-S

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3458
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SK3458 is N-channel DMOS FET device that features a
PART NUMBER
PACKAGE
2SK3458
TO-220AB
2SK3458-S
TO-262
2SK3458-ZK
TO-263
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply.
FEATURES
• Low gate charge
QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings
• Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
800
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±6.0
A
ID(pulse)
±24
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
100
W
Channel Temperature
Tch
150
°C
Drain Current (pulse)
Note1
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
6.0
A
Single Avalanche Energy
Note2
EAS
66.5
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14755EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2000
2SK3458
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 800 V, VGS = 0 V
100
µA
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±100
nA
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
| yfs |
VDS = 10 V, ID = 3.0 A
2.0
RDS(on)
VGS = 10 V, ID = 3.0 A
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
S
1.8
Ω
2.2
Input Capacitance
Ciss
VDS = 10 V
1220
pF
Output Capacitance
Coss
VGS = 0 V
170
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
16
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 3.0 A
17
ns
tr
VGS = 10 V
7
ns
td(off)
RG = 10 Ω
43
ns
11
ns
Rise Time
Turn-off Delay Time
Fall Time
tf
Total Gate Charge
QG
VDD = 450 V
25
nC
Gate to Source Charge
QGS
VGS = 10 V
6
nC
Gate to Drain Charge
QGD
ID = 6.0 A
10
nC
VF(S-D)
IF = 6.0 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 6.0 A, VGS = 0 V
1490
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/ µs
7.5
µC
Body Diode Forward Voltage
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
D.U.T.
L
50 Ω
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
VGS
RL
RG
RG = 10 Ω
PG.
VDD
VGS
Wave Form
0
VGS
10%
90%
VDD
ID
90%
90%
BVDSS
IAS
VDS
ID
ID
VGS
0
I
D
Wave Form
τ
VDD
Starting Tch
τ = 1 µs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
2
50 Ω
RL
VDD
Data Sheet D14755EJ1V0DS
0
10%
10%
td(on)
tr
ton
td(off)
tf
toff
2SK3458
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
80
60
40
20
100
80
60
40
20
0
0
0
20
40
60
80
100
120
140
160
0
20
TC - Case Temperature - °C
40
60
80
100
120
140
160
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
PW
10
n)
(o
DS
1
1
d
ite
Lim
10
R
=
10
0
ID(DC)
10
µs
µs
m
s
m
s
30 ms
DC
Power Dissipation Limited
TC = 25˚C
Single Pulse
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
ID(pulse)
Rth(ch-A) = 83.3˚C/W
100
10
Rth(ch-C) = 1.25˚C/W
1
0.1
0.01
10 µ
Single Pulse
100 µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14755EJ1V0DS
3
2SK3458
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
1000
10
Pulsed
V DS = 10 V
100
8
ID - Drain Current - A
ID - Drain Current - A
9
7
VGS = 10 V
6
5
4
3
2
10
1
T A = −50°C
−25°C
25°C
75°C
125°C
150°C
0.1
0.01
1
0
0.001
0
5
10
15
5
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
T A = −50°C
−25°C
25°C
75°C
125°C
150°C
1
0.1
-50
0
50
100
150
0.1
1
Tch - Channel Temperature - °C
RDS(on) - Drain to Source On-state Resistance - Ω
4.0
3.5
3.0
2.5
2.0
V GS = 10 V
1.0
0.5
0.0
0.1
1
10
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
4.5
1.5
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - Ω
15
VDS - Drain to Source Voltage - V
0.0
3.0
2.8
2.6
2.4
2.2
I D = 6.0 A
2.0
1.8
3.0 A
1.6
1.2 A
1.4
1.2
1.0
100
ID - Drain Current - A
4
10
VGS - Gate to Source Voltage - V
4.0
VGS(off) – Gate Cut-off Voltage - V
0
20
0
5
10
15
20
VGS - Gate to Source Voltage - V
Data Sheet D14755EJ1V0DS
25
2SK3458
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
5.0
10000
4.5
Ciss, Coss, Crss - Capacitance - pF
4.0
3.5
ID = 6.0 A
3.0
2.5
3.0 A
2.0
1.5
1.0
C iss
1000
100
C oss
10
VGS = 0 V
f = 1 MHz
0.5
0.0
1
-50
0
50
100
150
0.1
1
Tch - Channel Temperature - °C
100
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
700
100
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
10
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
td(off)
td(on)
tf
10
tr
1
14
ID = 6.0 A
V DD = 450 V
300 V
150 V
600
500
12
10
400
8
300
6
VGS
200
4
100
2
V DS
0
0.1
1
10
100
0
0
5
ID - Drain Current - A
10
15
20
25
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
10000
trr - Reverse Recovery Time - ns
100
ISD - Diode Forward Current - A
C rss
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
1
VGS = 10 V
0.1
0V
1000
100
di/dt = 50 A/ µs
V GS = 0 V
10
0.01
0
0.5
1
1.5
0.1
1
10
100
IF - Drain Current - A
VSD - Source to Drain Voltage - V
Data Sheet D14755EJ1V0DS
5
2SK3458
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
10
IAS = 6.0 A
EAS = 66.5 mJ
1
VDD = 150 V
RG = 25 Ω
VGS = 20 → 0 V
Starting T ch = 25°C
0.1
100 µ
80
60
40
20
0
1m
10 m
100 m
L - Inductive Load - H
6
VDD = 150 V
RG = 25 Ω
VGS = 20 → 0 V
Starting Tch = 25°C
IAS ≤ 6.0 A
100
Energy Derating Factor - %
IAS - Single Avalanche Current - A
100
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
Data Sheet D14755EJ1V0DS
2SK3458
PACKAGE DRAWINGS (Unit: mm)
3.0±0.3
10.6 MAX.
φ 3.6±0.2
10 TYP.
1.3±0.2
4
1
1.3±0.2
1.3±0.2
12.7 MIN.
6.0 MAX.
1 2 3
0.5±0.2
0.75±0.1
2.54 TYP.
2.8±0.2
0.75±0.3
2.54 TYP.
2
3
4.8 MAX.
1.3±0.2
12.7 MIN.
4
15.5 MAX.
5.9 MIN.
10.0 TYP.
1.0±0.5
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
8.5±0.2
1) TO-220AB (MP-25)
0.5±0.2
2.8±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1.35±0.3
3) TO-263 (MP-25ZK)
9.15±0.2
8.0 TYP.
8.4 TYP.
4
4.45±0.2
1.3±0.2
EQUIVALENT CIRCUIT
0.025 to
0.25
Drain (D)
0.5±
0.7±0.15
0.2
0 to
2.54
2.45±0.25
0.4
15.25±0.5
10.0±0.2
No plating
Gate (G)
Body
Diode
8o
0.25
1
2
3
Source (S)
1.Gate
2.Drain
2.5
3.Source
4.Fin (Drain)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
Data Sheet D14755EJ1V0DS
7
2SK3458
• The information in this document is current as of June, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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M8E 00. 4