MOSFET SMD Type P-Channel MOSFET 2SJ506S TO-252 Unit: mm ■ Features +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30 -0.1 +0.8 0.50 -0.7 3 .8 0 4 ● VDS (V) =-30V 0.127 max 2.3 0.60-+ 0.1 0.1 +0.25 2.65 -0.1 G +0.28 1.50 -0.1 ● RDS(ON) ＜ 180Ω (VGS =-4V) +0.1 0.80-0.1 +0.15 5.55 -0.15 +0.2 9.70 -0.2 ● RDS(ON) ＜ 85mΩ (VGS =-10V) +0.15 0.50 -0.15 D ● ID =-10 A 1 Gate 2 Drain 3 Source 4 Drain +0.15 4 .60 -0.15 S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current ID -10 Pulsed Drain Current IDM -40 Body to Drain Diode Reverse Drain Current IDR -10 （Note.1) Power Dissipation PD 20 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Unit V A W ℃ Note.1: PW ≤ 10 us, duty cycle ≤ 1% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Drain-Source Breakdown Voltage VDSS ID=-10mA, VGS=0V -30 Gate-Source Breakdown Voltage VGSS IG=±100uA, VDS=0V ±20 Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V Gate-Body leakage current IGSS VDS=0V, VGS=±16V Gate to Source Cutoff Voltage VGS(off) Static Drain-Source On-Resistance RDS(On) Forward Transconductance gFS VGS=-10V ID=-1mA Typ -1 10 16 Reverse Transfer Capacitance Crss 140 Turn-On DelayTime td(on) 12 Turn-On Rise Time tr Turn-Off DelayTime td(off) Diode Forward Voltage VSD uA -2 V 85 Ciss tf ±10 180 Coss trr uA VGS=-10V, ID=-5A Input Capacitance Body Diode Reverse Recovery Time -10 VGS=-4V, ID=-5A VDS=-10V, ID=-5A Unit V Output Capacitance Turn-Off Fall Time Max mΩ S 660 VGS=0V, VDS=-10V, f=1MHz VGS=-10V, ID=-5A, RL=2Ω 440 pF 65 85 ns 65 IF=-10A, dI/dt=50A/μs,VGS=0 IS=-10A,VGS=0V 65 -1.05 V www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET 2SJ506S ■ Typical Characterisitics Power vs. Temperature Derating 40 I D (A) 10 50 100 150 PW –0.2 –0.1 DC –0.5 –1 –20 –16 –12 Drain Current –8 –3 V Pulse Test –1.6 –1.2 I D = –10 A –0.4 –5 A –2 A 0 –4 –8 –12 Gate to Source Voltage www.kexin.com.cn –16 V GS (V) –5 –10 –20 –50 V DS (V) 25 ϒC V DS = –10 V Pulse Test –8 –4 75 ϒC 0 –16 –20 V DS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –0.8 s( 1s er ho a (T tio t) c= n 25 ϒC ) Tc = –25 ϒC –20 –1 –2 –3 –4 Gate to Source Voltage –5 V GS (V) Static Drain to Source on State Resistance vs. Drain Current 1000 Drain to Source On State Resistance R DS(on) ( Ω ) –2 0m Typical Transfer Characteristics VGS = –2.5 V –4 –8 –12 Drain to Source Voltage –2 ∝s 0 1 m ∝s s =1 Op Operation in this area is limited by R DS(on) –0.1 –0.2 10 Drain to Source Voltage –3.5 V 0 Drain to Source Saturation Voltage V DS(on) (V) –2 –1 –0.5 Tc ( C) –12 –4 10 –10 –5 200 Typical Output Characteristics –10 V –8 V –20 –4.5 V Pulse Test –5 V –6 V –16 –4 V Drain Current I D (A) Case Temperature Ta = 25 ϒC –20 Drain Current 20 Maximum Safe Operation Area –100 –50 (A) Channel Dissipation 30 ID Pch (W) –200 0 2 –500 500 200 100 VGS = –4 V –10 V 50 20 Pulse Test 10 –1 –2 –5 –10 Drain Current –20 –50 –100 I D (A) MOSFET SMD Type P-Channel MOSFET 2SJ506S Static Drain to Source on State Resistance vs. Temperature 200 –5 A Pulse Test I D = –10 A 160 V GS = –4 V –2 A 120 –10 A 40 –2,–5 A V GS = –10 V 0 –40 0 40 80 Case Temperature 50 20 Tc = –25 ϒC 10 25 ϒC 5 75 ϒC 2 V DS = –10 V Pulse Test 1 0.5 –0.1–0.2 –0.5 –1 –2 ( C) 5000 –5 –10 –20 –50 Drain Current I D (A) Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Capacitance C (pF) 2000 50 20 –0.5 –1 –2 –10 VDD = –5 V –10 V –25 V –20 V DD = –25 V –10 V –5 V –30 V GS –40 I = –10 A –50 D 0 8 16 Gate Charge 50 20 10 0 –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) 0 –4 –8 –12 –16 32 24 Qg (nc) Crss 100 I DR (A) V DS Coss 200 –5 –10 –20 Dynamic Input Characteristics Ciss 500 –20 40 1000 500 Switching Time t (ns) 0 1000 di / dt = 50 A / ∝s VGS = 0, Ta = 25 ϒC Reverse Drain Current V DS (V) Tc 160 Body to Drain Diode Reverse Recovery Time 10 –0.1 –0.2 Drain to Source Voltage 120 V GS (V) Reverse Recovery Time trr (ns) 100 Forward Transfer Admittance |y fs | (S) 80 Forward Transfer Admittance vs. Drain Current 100 Gate to Source Voltage Static Drain to Source on State Resistance R DS(on) ( Ω) ■ Typical Characterisitics Switching Characteristics V GS = –10 V, V DD = –10 V PW = 10 ∝s, duty < =1% 200 t d(off) 100 50 20 10 tf tr t d(on) 5 –0.1 –0.2 –0.5 –1 –2 –5 –10 –20 Drain Current I D (A) –50 www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET 2SJ506S ■ Typical Characterisitics Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) –20 Pulse Test –5 V –16 –10 V –12 V GS = 0.5 V –8 –4 0 –0.4 –0.8 –1.2 Source to Drain Voltage –1.6 –2.0 V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 1 Tc = 25ϒC D=1 0.5 0.3 0.2 0.1 0.05 0.1 0.03 . θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25 ϒC/W, Tc = 25 ϒC 0.02 1 0.0 h 1s e uls P ot PDM D= PW T PW T 0.01 10 ∝ 100 ∝ 1m 10 m Pulse Width 4 www.kexin.com.cn 100 m PW (S) 1 10