Transistors SMD Type PNP Transistors 2SB1172 TO-252 +0.15 6.50-0.15 +0.2 5.30-0.2 ● High forward current transfer ratio hFE which +0.15 1.50 -0.15 ■ Features Unit: mm +0.1 2.30 -0.1 +0.8 0.50 -0.7 3 .8 0 has satisfactory linearity 2.3 +0.15 5.55 -0.15 0.127 max 0.60-+ 0.1 0.1 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 ● Complementary to 2SD1742 +0.15 0.50 -0.15 +0.2 9.70 -0.2 ● Low collector-emitter saturation voltage VCE(sat) 1 Base +0.15 4 .60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -3 Collector current -Pulse ICP -5 Collector Power Dissipation 15 PC Ta = 25℃ Junction Temperature Storage Temperature range Unit 1.3 TJ 150 Tstg -55 to 150 V A W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -30 mA, IB=0 -60 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -60V , IE=0 -0.1 Collector-emitter cut-off current ICES VCE = −60 V, IB = 0 -200 Collector-emitter cut-off current ICEO VCE = −30 V, IB = 0 -300 IEBO V VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-3 A, IB=-375mA -1.2 Base - emitter saturation voltage VBE(sat) IC=-3 A, IB=-375mA -1.5 Emitter cut-off current Base - emitter voltage VBE DC current gain hFE Turn-ON Time ton Storage Time tstg Fall Time tf Transition frequency fT VCE= -4V, IC= -3 A 70 VCE= -4V, IC= -3 A 10 VCE= -10V, IC= -500mA,f=10MHz mA uA mA V -1.8 VCE= -4V, IC= -1 A IC = −1 A, IB1 = −100 mA, IB2 = 100 mA VCC = −50 V Unit 250 0.5 1.2 us 0.3 30 MHz ■ Classification of hfe(1) Type 2SB1172-Q 2SB1172-P Range 70-150 120-250 www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB1172 ■ Typical Characterisitics Ta IC (1)TC=Ta (2)Without heat sink (PC=1.3W) T C =25˚C (1) 5 IB =–100mA −4 –80mA –60mA −3 –40mA –30mA –20mA −2 0 40 80 120 160 (V) 0 −2 −4 hFE −1 T C =100˚C − 0.1 –25˚C −6 −8 −10 –25˚C 0 10 2 − 0.8 −1.2 fT −1.6 −2.0 IC 10 4 V CE =–4V T C =100˚C − 0.4 Base-emitter voltage BE V (V) 10 3 25˚C –25˚C 10 V CE=–5V f=10MHz TC=25˚C 10 3 10 2 10 25˚C − 0.01 − 0.01 − 0.1 −1 1 − 0.01 −10 Collector current I C (A) − 0.1 −1 ICP t=1ms −1 t=10ms t=300ms − 0.01 −1 2SB1172 − 0.1 −10 −100 −1 000 Collector-emitter voltage V CE (V ) www.kexin.com.cn −1 −10 t 103 Thermal resistance R th (°C/W) Collector current I C (A) Rth −10 − 0.1 Collector current I C (A) Collector current I C (A) Non repetitive pulse TC=25˚C IC 1 − 0.01 −10 Saf e operati on area −100 2 0 −12 IC 10 4 I C/I B=10 −10 −4 –4mA –16mA IC Forward current transfer ratio h FE Collector-emitter saturation voltage V CE(sat) V CE(sat) 25˚C T C =100˚C Collector-emitter voltage V CE (V) Ambient temperature Ta (°C) −100 −6 –8mA (2) 0 −8 −2 –12mA −1 VBE V CE =–4V Collector current I C (A) 10 0 IC −10 −5 15 Collector current CI (A) Collector power dissipation PC (W) VCE −6 Transition frequency T f (MHz) PC 20 (1)Without heat sink (2)With a 50× 50× 2mm Al heat sink 102 (1) (2) 10 1 10−1 10−4 10−3 10−2 10−1 1 Time t (s) 10 10 2 10 3 10 4