PolarTM Power MOSFET IXTP7N60PM VDSS ID25 RDS(on) (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP...M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 4 14 A A IA EAS TC = 25°C TC = 25°C 7 400 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ =150°C 10 V/ns PD TC = 25°C 41 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2.5 g TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight G Isolated Tab D S G = Gate S = Source D = Drain Features Plastic overmolded tab for electrical isolation International standard package Avalanche rated Low package inductance Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Easy to mount Space savings Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 600 VGS(th) VDS = VGS, ID = 100μA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 3.5A, Note 1 V 5.5 V ±100 nA TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 5 μA 50 μA 1.1 Ω Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies High speed power switching applications DS99950A(06/08) IXTP7N60PM Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10V, ID = 3.5A, Note 1 4 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 7 S 1180 pF 110 pF 11 pF td(on) Resistive Swithcing Times 20 ns tr VGS = 10V, VDS = 0.5 27 ns td(off) RG = 18Ω (External) 65 ns tf 26 ns Qg(on) 20 nC 7 nC 7 nC Qgs VGS= 10V, VDS = 0.5 VDSS, ID = 7A VDSS, ID = 3.5A Qgd 3.0 °C/W RthJC Source-Drain Diode Symbol Test Conditions IS VGS = 0V ISM ISOLATED TO-220 (IXTP...M) 1 2 3 Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 7 A Repetitive, pulse width limited by TJM 28 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 7A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 500 ns Notes:1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTP7N60PM Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 7 14 VGS = 10V 6 5 10 I D - Amperes I D - Amperes VGS = 10V 12 7V 4 3 6V 2 7V 8 6 6V 4 1 2 5V 5V 0 0 0 1 2 3 4 5 6 7 0 8 3 6 9 12 V D S - Volts Fig. 3. Output Characteristics 18 21 24 27 Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature @ 125ºC 2.6 7 2.4 VGS = 10V 6 7V VGS = 10V R D S ( o n ) - Normalized 2.2 5 I D - Amperes 15 V D S - Volts 6V 4 3 2 5V 2.0 1.8 ID = 7A 1.6 1.4 ID = 3.5A 1.2 1.0 0.8 1 0.6 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 0 VD S - Volts 50 75 100 125 150 Fig. 6. Drain Curre nt v s. Case Te mpe rature Fig. 5. RDS(on) Normalized to 0.5 I D25 Value vs. I D 4.5 2.6 4.0 2.4 VGS = 10V 3.5 TJ = 125ºC 2.2 I D - Amperes R D S ( o n ) - Normalized 25 TJ - Degrees Centigrade 2.0 1.8 1.6 1.4 1.2 3.0 2.5 2.0 1.5 1.0 TJ = 25ºC 0.5 1.0 0.0 0.8 0 2 4 6 I D 8 - Amperes © 2008 IXYS CORPORATION, All rights reserved 10 12 14 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 IXTP7N60PM Fig. 8. Transconductance Fig. 7. Input Admittance 12 9 11 8 10 TJ = - 40º C 9 TJ =125ºC 6 25ºC 5 - 40ºC 4 3 25º C 125º C 8 g f s - Siemens I D - Amperes 7 7 6 5 4 3 2 2 1 1 0 0 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 1 2 3 4 I V G S - Volts 20 10 18 9 VDS = 300V 16 8 ID = 3.5A 14 7 IG = 10mA 12 10 8 TJ = 125 ºC 6 5 6 7 8 9 16 18 20 10 - Amperes Fig. 10. Gate Charge VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage D 6 5 4 3 TJ = 25ºC 4 2 2 1 0 0 0.4 0.5 0.6 0.7 VS D 0.8 0.9 1 0 2 4 - Volts 6 8 Q G 10 12 14 22 - nanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10.00 10000 1000 Z ( t h ) J C - ºC / W Capacitance - picoFarads f = 1MHz C iss 100 Coss 1.00 0.10 10 Crss 0.01 1 0 5 10 15 20 25 30 35 40 VD S - Volts 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_7N60P(37)06-17-08-D