Gre r en Produ SDP(F)12N06 S a mHop Microelectronics C orp. Ver 1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Typ 600V 12A 0.5 @ VGS=10V Rugged and reliable. TO-220 and TO-220F Package. D G G D S G D S SDF SERIES TO-220F SDP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed SDP12N60 SDF12N60 600 ±30 ±30 TC=25°C TC=70°C a b 12 10 35 E AS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a d 12 e 10 e A 35 e A THERMAL CHARACTERISTICS a R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 214 58 W 150 40 W -55 to 175 0.7 62.5 a Details are subject to change without notice. A mJ 625 TC=25°C TC=70°C Units V V 2.6 62.5 °C °C/W °C/W Jan,12,2011 1 www.samhop.com.tw SDP(F)12N06 Ver 1.2 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Conditions Min VGS=0V , ID=250uA 600 Typ VGS= ±30V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=6A Forward Transconductance VDS=30V , ID=6A 2 Units V VDS=480V , VGS=0V Drain-Source On-State Resistance Max 3 0.50 8.5 uA 1 ±100 nA 4 0.63 V ohm S c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 1830 195 18 pF pF pF 54 ns 30 ns 89 ns 30 ns VDS=300V,ID=1A,VGS=10V 40 nC VDS=300V,ID=1A, VGS=10V 6 nC 15 nC VDS=25V,VGS=0V f=1.0MHz c VDD=300V ID=1A VGS=10V RGEN= 6 ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=5A 0.8 1.4 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=50mH,VDD = 100V.(See Figure12) e.Drain current limited by maximum junction temperatrue. Jan,12,2011 2 www.samhop.com.tw SDP(F)12N06 Ver 1.2 10 25 ID, Drain Current(A) I D, Drain Current(A) VG S = 10V 20 15 VG S = 6V 10 VG S = 5V 5 8 T j=125 C 6 55 C 4 25 C 2 0 0 0 15 10 5 20 25 30 0 V DS, Drain-to-Source Voltage(V) 3.0 1.0 2.6 R DS(on), On-Resistance Normalized R DS(on)( Ω) 1.2 0.8 0.6 V G S =10V 0.2 0.0 3.6 4.8 6.0 7.2 V G S =10V I D =6A 2.2 1.8 1.4 1.0 0 4 1 8 12 16 0 20 BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 50 75 100 125 150 T j( C ) Figure 4. On-Resistance Variation with Drain Current and Temperature Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.4 25 Tj, Junction Temperature(° C ) I D, Drain Current(A) Vth, Normalized Gate-Source Threshold Voltage 2.4 Figure 2. Transfer Characteristics Figure 1. Output Characteristics 0.4 1.2 V GS, Gate-to-Source Voltage(V) 75 100 125 150 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jan,12,2011 3 www.samhop.com.tw SDP(F)12N06 Ver 1.2 20.0 1.8 Is, Source-drain current(A) I D = 6A R DS(on)(Ω) 1.5 1.2 125 C 0.9 75 C 0.6 25 C 0.3 0 0 2 4 6 8 10.0 5.0 75 C 125 C 1.0 10 0 V GS, Gate-to-Source Voltage(V) 0.48 0.72 0.96 1.20 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 4200 3500 C, Capacitance(pF) 0.24 V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 2800 C is s 2100 1400 C os s 700 C rs s 0 0 20 10 40 30 V DS =300V I D = 1A 8 6 4 2 0 50 0 V DS, Drain-to-Source Voltage(V) 7 14 42 49 28 35 21 56 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 (O S RD VGS=10V Single Pulse TA=25 C 0.1 1 it L im N) DC us s s 1 VGS=10V Single Pulse TA=25 C 0.1 0.03 0.03 0.1 1m 0u ms 1 10 10 10 ms DC 10 (O s s S 0u 10 N) L im 10 I D , Drain C urrent (A) it 10 1m RD 100 I D , Drain C urrent (A) 25 C 10 100 0.1 1000 1 10 100 1000 V DS , Drain-S ource V oltage (V ) V DS , Drain-S ource V oltage (V ) Figure 11b. Maximum Safe Operating Area for SDF12N06 Figure 11a. Maximum Safe Operating Area for SDP12N06 Jan,12,2011 4 www.samhop.com.tw SDP(F)12N06 Ver 1.2 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V 0.0 1 tp IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 12a. F igure 12b. r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 t2 0.01 1. 2. 3. 4. S ingle P uls e 0.01 0.00001 0.0001 0.001 0.01 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 0.1 1 10 Square Wave Pulse Duration (msec) Figure 13a. Normalized Thermal Transient Impedance Curve for SDP12N06 r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.05 0.1 P DM 0.02 t1 0.01 t2 S ingle P uls e 0.01 0.00001 0.0001 1. 2. 3. 4. 0.001 0.01 0.1 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 1 10 S quare Wave P uls e Duration (ms ec) Figure 13b. Normalized Thermal Transient Impedance Curve for SDF12N06 Jan,12,2011 5 www.samhop.com.tw SDP(F)12N06 Ver 1.2 Jan,12,2011 6 www.samhop.com.tw SDP(F)12N06 Ver 1.2 # ' F . % . . O I H # . D D E G J A A1 b b1 c c2 E L1 L2 L4 L5 O e f g h 4.80 2.85 1.05 1.50 0.80 3.10 10.30 3.80 7.50 16.40 14.50 3.20 2.55 1.30 1.90 3.40 3.80 2.70 2.10 4.20 1.95 0.56 0.90 0.55 2.50 9.70 3.20 6.90 15.60 13.50 Jan,12,2011 7 www.samhop.com.tw SDP(F)12N06 Ver 1.2 TO-220 Tube Jan,12,2011 8 www.samhop.com.tw SDP(F)12N06 Ver 1.2 F Tube Jan,12,2011 9 www.samhop.com.tw