SDP(F)12N06

Gre
r en
Produ
SDP(F)12N06
S a mHop Microelectronics C orp.
Ver 1.2
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) ( Ω) Typ
600V
12A
0.5 @ VGS=10V
Rugged and reliable.
TO-220 and TO-220F Package.
D
G
G D S
G D S
SDF SERIES
TO-220F
SDP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
SDP12N60 SDF12N60
600
±30
±30
TC=25°C
TC=70°C
a
b
12
10
35
E AS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
a
d
12
e
10
e
A
35
e
A
THERMAL CHARACTERISTICS
a
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
214
58
W
150
40
W
-55 to 175
0.7
62.5
a
Details are subject to change without notice.
A
mJ
625
TC=25°C
TC=70°C
Units
V
V
2.6
62.5
°C
°C/W
°C/W
Jan,12,2011
1
www.samhop.com.tw
SDP(F)12N06
Ver 1.2
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Conditions
Min
VGS=0V , ID=250uA
600
Typ
VGS= ±30V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=6A
Forward Transconductance
VDS=30V , ID=6A
2
Units
V
VDS=480V , VGS=0V
Drain-Source On-State Resistance
Max
3
0.50
8.5
uA
1
±100
nA
4
0.63
V
ohm
S
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
1830
195
18
pF
pF
pF
54
ns
30
ns
89
ns
30
ns
VDS=300V,ID=1A,VGS=10V
40
nC
VDS=300V,ID=1A,
VGS=10V
6
nC
15
nC
VDS=25V,VGS=0V
f=1.0MHz
c
VDD=300V
ID=1A
VGS=10V
RGEN= 6 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=5A
0.8
1.4
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=50mH,VDD = 100V.(See Figure12)
e.Drain current limited by maximum junction temperatrue.
Jan,12,2011
2
www.samhop.com.tw
SDP(F)12N06
Ver 1.2
10
25
ID, Drain Current(A)
I D, Drain Current(A)
VG S = 10V
20
15
VG S = 6V
10
VG S = 5V
5
8
T j=125 C
6
55 C
4
25 C
2
0
0
0
15
10
5
20
25
30
0
V DS, Drain-to-Source Voltage(V)
3.0
1.0
2.6
R DS(on), On-Resistance
Normalized
R DS(on)( Ω)
1.2
0.8
0.6
V G S =10V
0.2
0.0
3.6
4.8
6.0
7.2
V G S =10V
I D =6A
2.2
1.8
1.4
1.0
0
4
1
8
12
16
0
20
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.6
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
50
75
100
125
150
T j( C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.4
25
Tj, Junction Temperature(° C )
I D, Drain Current(A)
Vth, Normalized
Gate-Source Threshold Voltage
2.4
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
0.4
1.2
V GS, Gate-to-Source Voltage(V)
75 100 125 150
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jan,12,2011
3
www.samhop.com.tw
SDP(F)12N06
Ver 1.2
20.0
1.8
Is, Source-drain current(A)
I D = 6A
R DS(on)(Ω)
1.5
1.2
125 C
0.9
75 C
0.6
25 C
0.3
0
0
2
4
6
8
10.0
5.0
75 C
125 C
1.0
10
0
V GS, Gate-to-Source Voltage(V)
0.48
0.72
0.96
1.20
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V GS, Gate to Source Voltage(V)
4200
3500
C, Capacitance(pF)
0.24
V SD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
2800
C is s
2100
1400
C os s
700
C rs s
0
0
20
10
40
30
V DS =300V
I D = 1A
8
6
4
2
0
50
0
V DS, Drain-to-Source Voltage(V)
7
14
42 49
28 35
21
56
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
100
(O
S
RD
VGS=10V
Single Pulse
TA=25 C
0.1
1
it
L im
N)
DC
us
s
s
1
VGS=10V
Single Pulse
TA=25 C
0.1
0.03
0.03
0.1
1m
0u
ms
1
10
10
10
ms
DC
10
(O
s
s
S
0u
10
N)
L im
10
I D , Drain C urrent (A)
it
10
1m
RD
100
I D , Drain C urrent (A)
25 C
10
100
0.1
1000
1
10
100
1000
V DS , Drain-S ource V oltage (V )
V DS , Drain-S ource V oltage (V )
Figure 11b. Maximum Safe Operating
Area for SDF12N06
Figure 11a. Maximum Safe Operating
Area for SDP12N06
Jan,12,2011
4
www.samhop.com.tw
SDP(F)12N06
Ver 1.2
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
0.0 1
tp
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 12a.
F igure 12b.
r(t),Normalized Effective
Transient Thermal Impedance
2
1
D=0.5
0.2
0.1
0.1
P DM
0.05
t1
0.02
t2
0.01
1.
2.
3.
4.
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
0.1
1
10
Square Wave Pulse Duration (msec)
Figure 13a. Normalized Thermal Transient Impedance Curve for SDP12N06
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
D=0.5
0.2
0.1
0.05
0.1
P DM
0.02
t1
0.01
t2
S ingle P uls e
0.01
0.00001
0.0001
1.
2.
3.
4.
0.001
0.01
0.1
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
1
10
S quare Wave P uls e Duration (ms ec)
Figure 13b. Normalized Thermal Transient Impedance Curve for SDF12N06
Jan,12,2011
5
www.samhop.com.tw
SDP(F)12N06
Ver 1.2
Jan,12,2011
6
www.samhop.com.tw
SDP(F)12N06
Ver 1.2
#
'
F
.
%
.
.
O
I
H
#
.
D
D
E
G
J
A
A1
b
b1
c
c2
E
L1
L2
L4
L5
O
e
f
g
h
4.80
2.85
1.05
1.50
0.80
3.10
10.30
3.80
7.50
16.40
14.50
3.20
2.55
1.30
1.90
3.40
3.80
2.70
2.10
4.20
1.95
0.56
0.90
0.55
2.50
9.70
3.20
6.90
15.60
13.50
Jan,12,2011
7
www.samhop.com.tw
SDP(F)12N06
Ver 1.2
TO-220 Tube
Jan,12,2011
8
www.samhop.com.tw
SDP(F)12N06
Ver 1.2
F Tube
Jan,12,2011
9
www.samhop.com.tw