STP15L01/F

r
Pr
STP15L01/F
S a mHop Microelectronics C orp.
Ver1.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Typ
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
110 @ VGS=10V
100V
TO-220 and TO-220F Package.
15A
121 @ VGS=4.5V
D
G
G D S
G D S
STF SERIES
TO-220F
STP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
TO-220
±20
TC=25°C
TC=70°C
a
b
TO-220F
100
±20
15
15
12.6
45
E AS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
a
d
e
THERMAL CHARACTERISTICS
a
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
12.6
A
45
e
A
mJ
58
25
W
40
17.5
W
-55 to 175
2.6
62.5
a
Details are subject to change without notice.
A
e
25
TC=25°C
TC=70°C
Units
V
V
6
62.5
°C
°C/W
°C/W
Nov,01,2010
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STP15L01/F
Ver1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
VGS=0V , ID=250uA
100
IDSS
Zero Gate Voltage Drain Current
VDS=80V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
Max
Units
V
1
uA
±100
nA
1.7
3
110
138
V
m-ohm
VGS=4.5V , ID=6A
121
163
m-ohm
VDS=20V , ID=7A
15
S
VDS=25V,VGS=0V
f=1.0MHz
675
48
32
pF
pF
pF
16
14.5
ns
ns
VDS=VGS , ID=250uA
VGS=10V , ID=7A
1
Typ
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
c
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
31
ns
6.4
ns
VDS=50V,ID=7A,VGS=10V
12.4
nC
VDS=50V,ID=7A,VGS=4.5V
6.4
nC
VDS=50V,ID=7A,
VGS=10V
1.7
nC
3.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=2A
0.8
1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure12)
e.Drain current limited by maximum junction temperatrue.
Nov,01,2010
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STP15L01/F
Ver 1.0
15
15
ID, Drain Current(A)
I D, Drain Current(A)
VG S = 10V
VG S = 4V
12
VG S = 4.5V
9
VG S = 3.5V
6
VG S = 3V
3
12
9
T j=125 C
6
25 C
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
V DS, Drain-to-Source Voltage(V)
250
2.6
R DS(on), On-Resistance
Normalized
R DS(on)(m Ω)
3.0
200
V G S =4.5V
100
V G S =10V
1.6
2.4
3.2
4.0
4.8
Figure 2. Transfer Characteristics
300
150
0.8
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
50
V G S =10V
I D =7A
2.2
1.8
1.4
V G S =4.5V
I D =6A
1.0
0
0
3
1
6
9
12
0
15
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.6
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
50
75
100
125
150
T j( C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.4
25
Tj, Junction Temperature(° C )
I D, Drain Current(A)
Vth, Normalized
Gate-Source Threshold Voltage
-55 C
3
75 100 125 150
1.20
I D =250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Nov,01,2010
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STP15L01/F
Ver 1.0
60
360
Is, Source-drain current(A)
I D = 7A
R DS(on)(mΩ)
300
240
125 C
180
75 C
120
25 C
60
0
0
2
4
6
8
125 C
10
75 C
25 C
1
10
0
V GS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
0.6
0.9
1.2
10
V GS, Gate to Source Voltage(V)
C is s
750
600
450
300
C os s
150
C rs s
0
0
10
5
15
20
25
V DS =50V
I D = 7A
8
6
4
2
0
30
0
V DS, Drain-to-Source Voltage(V)
2
4
6
8
10
12
14 16
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
80
80
10
it
L im
N)
(O
S
RD
I D , Drain C urrent (A)
it
L im
N)
(O
S
RD
VGS=10V
Single Pulse
TA=25 C
1m
10
DC
s
1
10
0u
s
ms
10
DC
s
1m
10
0u
10
us
10
I D , Drain C urrent (A)
1.5
Figure 8. Body Diode Forward Voltage
Variation with Source Current
900
C, Capacitance(pF)
0.3
V SD, Body Diode Forward Voltage(V)
s
ms
1
VGS=10V
Single Pulse
TA=25 C
0.1
0.1
0.1
1
10
0.1
100
1
10
100
V DS , Drain-S ource V oltage (V )
V DS , Drain-S ource V oltage (V )
Figure 11b. Maximum Safe Operating
Area for STP15L01F
Figure 11a. Maximum Safe Operating
Area for STP15L01
Nov,01,2010
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STP15L01/F
Ver 1.0
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
0.0 1
tp
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 12a.
F igure 12b.
r(t),Normalized Effective
Transient Thermal Impedance
2
1
D=0.5
0.2
0.1
0.1
P DM
0.05
t1
t2
0.02
1.
2.
3.
4.
0.01
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
0.1
1
10
Square Wave Pulse Duration (msec)
Figure 13a. Normalized Thermal Transient Impedance Curve for STP15L01
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
D=0.5
0.2
0.1
0.05
P DM
0.1
0.02
t1
t2
0.01
1.
2.
3.
4.
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
0.1
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
1
10
S quare Wave P uls e Duration (ms ec)
Figure 13b. Normalized Thermal Transient Impedance Curve for STP15L01F
Nov,01,2010
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STP15L01/F
Ver 1.0
Nov,01,2010
6
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STP15L01/F
Ver 1.0
#
'
F
.
%
.
.
O
I
H
#
.
D
D
E
G
J
A
A1
b
b1
c
c2
E
L1
L2
L4
L5
O
e
f
g
h
4.80
2.85
1.05
1.50
0.80
3.10
10.30
3.80
7.50
16.40
14.50
3.20
2.55
1.30
1.90
3.40
3.80
2.70
2.10
4.20
1.95
0.56
0.90
0.55
2.50
9.70
3.20
6.90
15.60
13.50
Nov,01,2010
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STP15L01/F
Ver 1.0
TO-220 Tube
Nov,01,2010
8
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STP15L01/F
Ver 1.0
F Tube
Nov,01,2010
9
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