r Pr STP15L01/F S a mHop Microelectronics C orp. Ver1.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 110 @ VGS=10V 100V TO-220 and TO-220F Package. 15A 121 @ VGS=4.5V D G G D S G D S STF SERIES TO-220F STP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed TO-220 ±20 TC=25°C TC=70°C a b TO-220F 100 ±20 15 15 12.6 45 E AS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a d e THERMAL CHARACTERISTICS a R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 12.6 A 45 e A mJ 58 25 W 40 17.5 W -55 to 175 2.6 62.5 a Details are subject to change without notice. A e 25 TC=25°C TC=70°C Units V V 6 62.5 °C °C/W °C/W Nov,01,2010 1 www.samhop.com.tw STP15L01/F Ver1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Conditions Min VGS=0V , ID=250uA 100 IDSS Zero Gate Voltage Drain Current VDS=80V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Max Units V 1 uA ±100 nA 1.7 3 110 138 V m-ohm VGS=4.5V , ID=6A 121 163 m-ohm VDS=20V , ID=7A 15 S VDS=25V,VGS=0V f=1.0MHz 675 48 32 pF pF pF 16 14.5 ns ns VDS=VGS , ID=250uA VGS=10V , ID=7A 1 Typ c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge c VDD=50V ID=1A VGS=10V RGEN= 6 ohm 31 ns 6.4 ns VDS=50V,ID=7A,VGS=10V 12.4 nC VDS=50V,ID=7A,VGS=4.5V 6.4 nC VDS=50V,ID=7A, VGS=10V 1.7 nC 3.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=2A 0.8 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure12) e.Drain current limited by maximum junction temperatrue. Nov,01,2010 2 www.samhop.com.tw STP15L01/F Ver 1.0 15 15 ID, Drain Current(A) I D, Drain Current(A) VG S = 10V VG S = 4V 12 VG S = 4.5V 9 VG S = 3.5V 6 VG S = 3V 3 12 9 T j=125 C 6 25 C 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 V DS, Drain-to-Source Voltage(V) 250 2.6 R DS(on), On-Resistance Normalized R DS(on)(m Ω) 3.0 200 V G S =4.5V 100 V G S =10V 1.6 2.4 3.2 4.0 4.8 Figure 2. Transfer Characteristics 300 150 0.8 V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 50 V G S =10V I D =7A 2.2 1.8 1.4 V G S =4.5V I D =6A 1.0 0 0 3 1 6 9 12 0 15 BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 50 75 100 125 150 T j( C ) Figure 4. On-Resistance Variation with Drain Current and Temperature Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.4 25 Tj, Junction Temperature(° C ) I D, Drain Current(A) Vth, Normalized Gate-Source Threshold Voltage -55 C 3 75 100 125 150 1.20 I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,01,2010 3 www.samhop.com.tw STP15L01/F Ver 1.0 60 360 Is, Source-drain current(A) I D = 7A R DS(on)(mΩ) 300 240 125 C 180 75 C 120 25 C 60 0 0 2 4 6 8 125 C 10 75 C 25 C 1 10 0 V GS, Gate-to-Source Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 0.6 0.9 1.2 10 V GS, Gate to Source Voltage(V) C is s 750 600 450 300 C os s 150 C rs s 0 0 10 5 15 20 25 V DS =50V I D = 7A 8 6 4 2 0 30 0 V DS, Drain-to-Source Voltage(V) 2 4 6 8 10 12 14 16 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 80 80 10 it L im N) (O S RD I D , Drain C urrent (A) it L im N) (O S RD VGS=10V Single Pulse TA=25 C 1m 10 DC s 1 10 0u s ms 10 DC s 1m 10 0u 10 us 10 I D , Drain C urrent (A) 1.5 Figure 8. Body Diode Forward Voltage Variation with Source Current 900 C, Capacitance(pF) 0.3 V SD, Body Diode Forward Voltage(V) s ms 1 VGS=10V Single Pulse TA=25 C 0.1 0.1 0.1 1 10 0.1 100 1 10 100 V DS , Drain-S ource V oltage (V ) V DS , Drain-S ource V oltage (V ) Figure 11b. Maximum Safe Operating Area for STP15L01F Figure 11a. Maximum Safe Operating Area for STP15L01 Nov,01,2010 4 www.samhop.com.tw STP15L01/F Ver 1.0 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V 0.0 1 tp IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 12a. F igure 12b. r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 S ingle P uls e 0.01 0.00001 0.0001 0.001 0.01 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 0.1 1 10 Square Wave Pulse Duration (msec) Figure 13a. Normalized Thermal Transient Impedance Curve for STP15L01 r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.05 P DM 0.1 0.02 t1 t2 0.01 1. 2. 3. 4. S ingle P uls e 0.01 0.00001 0.0001 0.001 0.01 0.1 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 1 10 S quare Wave P uls e Duration (ms ec) Figure 13b. Normalized Thermal Transient Impedance Curve for STP15L01F Nov,01,2010 5 www.samhop.com.tw STP15L01/F Ver 1.0 Nov,01,2010 6 www.samhop.com.tw STP15L01/F Ver 1.0 # ' F . % . . O I H # . D D E G J A A1 b b1 c c2 E L1 L2 L4 L5 O e f g h 4.80 2.85 1.05 1.50 0.80 3.10 10.30 3.80 7.50 16.40 14.50 3.20 2.55 1.30 1.90 3.40 3.80 2.70 2.10 4.20 1.95 0.56 0.90 0.55 2.50 9.70 3.20 6.90 15.60 13.50 Nov,01,2010 7 www.samhop.com.tw STP15L01/F Ver 1.0 TO-220 Tube Nov,01,2010 8 www.samhop.com.tw STP15L01/F Ver 1.0 F Tube Nov,01,2010 9 www.samhop.com.tw