DF N 20 20 MD -6 PMPB12UNE 20 V, N-channel Trench MOSFET 12 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Trench MOSFET technology Low threshold voltage Exposed drain pad for excellent thermal conduction Tin-plated 100% solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications • • • • LED driver Power management Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 20 V VGS gate-source voltage -12 - 12 V ID drain current - - 11.4 A - 12 16 mΩ VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 7.9 A; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product PMPB12UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline 1 Graphic symbol D 6 7 2 3 8 5 G 4 Transparent top view DFN2020MD-6 (SOT1220) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMPB12UNE Description Version DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1220 7. Marking Table 4. Marking codes Type number Marking code PMPB12UNE 2Y PMPB12UNE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 16 PMPB12UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage -12 12 V ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 11.4 A VGS = 4.5 V; Tamb = 25 °C [1] - 7.9 A VGS = 4.5 V; Tamb = 100 °C [1] - 5 A - 32 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C [2] - 470 mW Tamb = 25 °C; t ≤ 5 s [1] - 1.56 W - 12.5 W Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 1.5 A Source-drain diode IS source current [1] [2] Tamb = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) 017aaa124 120 Ider (%) 80 80 40 40 0 - 75 Fig. 1. [1] - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMPB12UNE Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 12 April 2016 25 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 16 PMPB12UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-022399 102 Limit RDSon = VDS/ID ID (A) tp = 10 µs 10 100 µs 1 ms 1 DC; Tsp = 25 °C 10-1 10-2 10-1 Fig. 3. 10 ms 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 1 10 VDS (V) 102 Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMPB12UNE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 16 PMPB12UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 230 265 K/W [2] - 70 80 K/W [2] - 34 39 K/W - 5 10 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. aaa-022400 103 Zth(j-a) (K/W) 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . duty cycle = 1 0.75 102 0.33 0.20 0.50 0.25 0.10 10 0.05 0.01 0.02 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMPB12UNE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 16 PMPB12UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-022401 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.33 0.20 10 0.50 0.25 0.10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMPB12UNE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 16 PMPB12UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS=VGS; Tj = 25 °C 0.4 0.65 0.9 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 2.5 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -2.5 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 4.5 V; ID = 7.9 A; Tj = 25 °C - 12 16 mΩ VGS = 4.5 V; ID = 7.9 A; Tj = 150 °C - 19 25 mΩ VGS = 2.5 V; ID = 7.1 A; Tj = 25 °C - 15 20 mΩ VGS = 1.8 V; ID = 1.9 A; Tj = 25 °C - 20 29 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = 10 V; ID = 7.9 A; Tj = 25 °C - 18 - S RG gate resistance f = 1 MHz - 1.8 - Ω total gate charge VDS = 10 V; ID = 6 A; VGS = 4.5 V; - 10.9 17 nC QGS gate-source charge Tj = 25 °C - 1.3 - nC QGD gate-drain charge - 2.1 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 1220 - pF Coss output capacitance Tj = 25 °C - 124 - pF Crss reverse transfer capacitance - 102 - pF td(on) turn-on delay time VDS = 10 V; ID = 6 A; VGS = 4.5 V; - 10 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 24 - ns td(off) turn-off delay time - 32 - ns tf fall time - 34 - ns - 0.7 1.2 V Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage PMPB12UNE Product data sheet IS = 1.5 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 12 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 16 PMPB12UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-022402 35 ID (A) 30 aaa-022403 10-3 4.5 V ID (A) 2.5 V 1.8 V 25 10-4 20 1.6 V 15 1.5 V 10 Fig. 6. max VGS = 1.4 V 5 0 typ min 10-5 0 1 2 3 4 VDS (V) 10-6 5 0 0.2 0.4 0.6 0.8 1 VGS (V) Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-022404 80 1.4 V 1.5 V RDSon (mΩ) 1.6 V aaa-022405 70 RDSon (mΩ) 60 1.8 V 60 50 40 2.0 V 40 20 Tj = 150 °C 2.5 V 20 VGS = 4.5 V 10 20 0 0 8 16 24 ID (A) 0 32 Tj = 25 °C Fig. 8. Product data sheet 0 1 2 3 4 VGS (V) 5 ID = 5.7 A Drain-source on-state resistance as a function of drain current; typical values PMPB12UNE Tj = 25 °C Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 12 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 16 PMPB12UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-022406 30 aaa-022407 2.0 a ID (A) 1.5 20 1.0 Tj = 150 °C 10 0.5 Tj = 25 °C 0 0 1 2 VGS (V) 0 -60 3 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values VGS(th) (V) 0.8 60 120 180 aaa-022409 104 max Tj (°C) Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-022408 1.2 0 C (pF) typ Ciss 103 min 0 -60 0 60 120 Tj (°C) 10 10-1 180 ID = 0.25 mA; VDS = VGS Product data sheet Crss 1 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMPB12UNE Coss 102 0.4 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 12 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 16 PMPB12UNE NXP Semiconductors 20 V, N-channel Trench MOSFET aaa-022410 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 1 0 QGS2 0 2 4 6 8 QGS QGD QG(tot) 003aaa508 Fig. 15. Gate charge waveform definitions 10 QG (nC) ID = 6 A; VDS = 10 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-022411 6 IS (A) 4 Tj = 150 °C 2 Tj = 25 °C 0 0 4 8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMPB12UNE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 10 / 16 PMPB12UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 12. Package outline DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm SOT1220 (8×) pin 1 index area B E A X D A A1 detail X solderable lead end protrusion max. 0.02 mm (6×) C Lp E2 J1 D2 3 4 2 5 e J D1 bp (6×) e 1 v E1 0 2 mm scale Dimensions (mm are the original dimensions) Unit A A1 bp min 0.25 nom max 0.65 0.04 0.35 D D1 D2 E E1 E2 1.9 1.0 0.2 1.9 1.1 0.51 2.1 1.2 0.3 2.1 1.3 0.61 e J J1 0.65 0.27 0.64 Lp 0.2 0.3 v y y1 0.1 0.05 0.1 Note 1. Dimension A is including plating thickness. Outline version A B 6 pin 1 index area mm y y1 C sot1220_po References IEC JEDEC JEITA European projection Issue date 12-04-23 12-04-30 SOT1220 Fig. 18. Package outline DFN2020MD-6 (SOT1220) PMPB12UNE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 11 / 16 PMPB12UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN2020MD-6 package 0.33 (6×) SOT1220 0.76 0.43 (6×) 0.66 0.53 (6×) 0.56 0.25 0.35 0.45 0.775 0.65 2.06 0.285 1.25 1.35 0.35 (6×) 1.05 0.25 (6×) 0.65 0.45 (6×) 0.9 1.1 1.2 0.935 0.935 2.5 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot1220_fr Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220) PMPB12UNE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 12 / 16 PMPB12UNE NXP Semiconductors 20 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMPB12UNE v.1 20160412 Product data sheet - - PMPB12UNE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 13 / 16 PMPB12UNE NXP Semiconductors 20 V, N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 12 April 2016 © NXP Semiconductors N.V. 2016. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 7 11 Test information ................................................... 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 12 April 2016 PMPB12UNE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 16 / 16