NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current - - 180 mA - 2.7 4.5 Ω Per transistor VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics (per transistor) RDSon drain-source on-state resistance [1] VGS = 10 V; ID = 100 mA; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 6 5 Graphic symbol D2 D1 4 G1 1 2 G2 3 TSSOP6 (SOT363) S1 S2 017aaa256 6. Ordering information Table 3. Ordering information Type number Package NX3020NAKS Name Description Version TSSOP6 plastic surface-mounted package; 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code [1] NX3020NAKS Ua% [1] % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage -20 20 V ID drain current Per transistor VGS = 4.5 V; Tamb = 25 °C [1] - 180 mA VGS = 4.5 V; Tamb = 100 °C [1] - 110 mA - 720 mA [2] - 260 mW [1] - 280 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C NX3020NAKS Product data sheet All information provided in this document is subject to legal disclaimers. 11 November 2013 © NXP N.V. 2013. All rights reserved 2 / 15 NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET Symbol Parameter Conditions Min Max Unit Tsp = 25 °C - 1100 mW source current Tamb = 25 °C - 180 mA Ptot total power dissipation Tamb = 25 °C - 375 mW Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS Per device [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 017aaa001 120 Pder (%) 017aaa002 120 Ider (%) 80 80 40 40 0 - 75 Fig. 1. [2] - 25 25 75 Normalized total power dissipation as a function of ambient temperature NX3020NAKS Product data sheet 0 - 75 125 175 Tamb (°C) Fig. 2. - 25 75 125 175 Tamb (°C) Normalized continuous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. 11 November 2013 25 © NXP N.V. 2013. All rights reserved 3 / 15 NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 017aaa673 1 Limit RDSon = VDS/ID ID (A) tp = 100 µs tp = 1 ms 10-1 tp = 10 ms tp = 100 ms DC; Tsp = 25 °C 10-2 DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-3 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - 390 480 K/W [2] - 380 430 K/W - - 110 K/W Per transistor Rth(j-a) Rth(j-sp) thermal resistance from junction to solder point [1] [2] NX3020NAKS Product data sheet Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . All information provided in this document is subject to legal disclaimers. 11 November 2013 © NXP N.V. 2013. All rights reserved 4 / 15 NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 017aaa674 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.25 0.1 0.05 0.02 0 0.01 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa675 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.25 0.1 0.05 0 10 10-3 0.02 0.01 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX3020NAKS Product data sheet All information provided in this document is subject to legal disclaimers. 11 November 2013 © NXP N.V. 2013. All rights reserved 5 / 15 NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.8 1.2 1.5 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 10 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 3.5 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 3.5 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA VGS = 10 V; ID = 100 mA; Tj = 25 °C - 2.7 4.5 Ω VGS = 10 V; ID = 100 mA; Tj = 150 °C - 5.5 9.2 Ω VGS = 4.5 V; ID = 100 mA; Tj = 25 °C - 3 5.2 Ω VGS = 2.5 V; ID = 10 mA; Tj = 25 °C - 4 13 Ω VDS = 10 V; ID = 150 mA; Tj = 25 °C - 320 - mS IGSS RDSon gfs gate leakage current drain-source on-state resistance forward transconductance Dynamic characteristics (per transistor) QG(tot) total gate charge VDS = 15 V; ID = 150 mA; VGS = 4.5 V; - 0.34 0.44 nC QGS gate-source charge Tj = 25 °C - 0.11 - nC QGD gate-drain charge - 0.06 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 13 20 pF Coss output capacitance Tj = 25 °C - 2.6 - pF Crss reverse transfer capacitance - 1.1 - pF td(on) turn-on delay time VDS = 20 V; RL = 250 Ω; VGS = 10 V; - 5 10 ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 5 - ns td(off) turn-off delay time - 34 68 ns tf fall time - 17 - ns 0.47 0.7 1.2 V Source-drain diode (per transistor) VSD source-drain voltage NX3020NAKS Product data sheet IS = 115 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 11 November 2013 © NXP N.V. 2013. All rights reserved 6 / 15 NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 017aaa663 0.5 10 V 4.5 V ID (A) 0.4 017aaa664 10-3 3.5 V ID (A) 3V 10-4 0.3 min typ max 2.5 V 0.2 10-5 0.1 0 Fig. 6. VGS = 2 V 0 1 2 3 10-6 4 VDS (V) 0 0.5 1.0 1.5 VGS (V) 2.0 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage 017aaa665 10 2V RDSon (Ω) 2.5 V 017aaa666 12 3V RDSon (Ω) 8 8 6 4.5 V 4 VGS = 10 V 2 0 Tj = 150 °C 3.5 V 4 Tj = 25 °C 0 0.1 0.2 0.3 0.4 ID (A) 0 0.5 Tj = 25 °C Fig. 8. Product data sheet 2 4 6 8 10 VGS (V) ID = 0.15 A Drain-source on-state resistance as a function of drain current; typical values NX3020NAKS 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 11 November 2013 © NXP N.V. 2013. All rights reserved 7 / 15 NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 017aaa667 0.4 017aaa668 2.5 a ID (A) 2.0 0.3 1.5 0.2 1.0 0.1 Tj = 150 °C 0 0 0.5 Tj = 25 °C 1 2 3 VGS (V) 0 -60 4 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa669 2.0 0 60 120 017aaa670 C (pF) 1.5 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 102 VGS(th) (V) Tj (°C) Ciss max 10 typ 1.0 Coss min 1 0.5 0 -60 Crss 0 60 120 Tj (°C) 10-1 10-1 180 Fig. 12. Gate-source threshold voltage as a function of junction temperature Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V ID = 0.25 mA; VDS = VGS NX3020NAKS 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 11 November 2013 © NXP N.V. 2013. All rights reserved 8 / 15 NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 017aaa671 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 0.2 0.4 0.6 QG (nC) Fig. 15. Gate charge waveform definitions 0.8 ID = 0.15 A; VDS = 15 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa672 0.5 IS (A) 0.4 0.3 0.2 0.1 0 Tj = 150 °C 0 0.4 Tj = 25 °C 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition NX3020NAKS Product data sheet All information provided in this document is subject to legal disclaimers. 11 November 2013 © NXP N.V. 2013. All rights reserved 9 / 15 NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 6 leads SOT363 D B E y A X HE 6 5 v M A 4 Q pin 1 index A 1 2 e1 A1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT363 JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig. 18. Package outline TSSOP6 (SOT363) NX3020NAKS Product data sheet All information provided in this document is subject to legal disclaimers. 11 November 2013 © NXP N.V. 2013. All rights reserved 10 / 15 NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 13. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig. 19. Reflow soldering footprint for TSSOP6 (SOT363) 1.5 solder lands 0.3 2.5 4.5 1.5 solder resist occupied area Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig. 20. Wave soldering footprint for TSSOP6 (SOT363) NX3020NAKS Product data sheet All information provided in this document is subject to legal disclaimers. 11 November 2013 © NXP N.V. 2013. All rights reserved 11 / 15 NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes NX3020NAKS v.3 20131111 Product data sheet - NX3020NAKS v.2 Modifications: • NX3020NAKS v.2 20131029 Product data sheet - NX3020NAKS v.1 NX3020NAKS v.1 20120706 Product data sheet - - NX3020NAKS Product data sheet Marking code corrected All information provided in this document is subject to legal disclaimers. 11 November 2013 © NXP N.V. 2013. All rights reserved 12 / 15 NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 11 November 2013 © NXP N.V. 2013. All rights reserved 13 / 15 NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 November 2013 NX3020NAKS Product data sheet All information provided in this document is subject to legal disclaimers. 11 November 2013 © NXP N.V. 2013. All rights reserved 15 / 15