DISCRETE SEMICONDUCTORS DATA SHEET BLV58 UHF linear push-pull power transistor Product specification September 1991 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES • High power gain • Double stage internal input matching for high input impedance • Diffused emitter-ballasting resistors enhances ruggedness • Gold metallization for high reliability. DESCRIPTION The BLV58 is a common emitter epitaxial npn silicon planar transistor designed for high linearity class-A operation in UHF (bands 4 and 5) TV transmitters and transposers. The device is incorporated in a push-pull SOT289 flange envelope with a ceramic cap, which is utilized with the emitters connected to the flange. BLV58 QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION c.w. class-A fvision (MHz) VCE (V) ICQ (A) Po sync (W) Gp (dB) dim (dB) (note 1) 860 25 2 × 1.6 25 >10 < −45 Note 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB); zero dB corresponds to peak sync level. PIN CONFIGURATION c1 k, halfpage 1 2 handbook, halfpage b1 e 5 3 b2 4 Top view MBC043 PINNING - SOT289 PIN MBA970 c2 DESCRIPTION 1 collector 1 2 collector 2 3 base 1 4 base 2 5 emitter Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. September 1991 2 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 LIMITING VALUES (per transistor section unless otherwise specified) In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 27 V VEBO emitter-base voltage open collector − 3.5 V IC, IC(AV) collector current DC or average value − 4 A ICM collector current peak value; f > 1 MHz − 8 A Ptot total power dissipation DC operation; Tmb = 70 °C (note 1) − 87 W Tstg storage temperature range −65 150 °C Tj junction operating temperature − 200 °C Note 1. Total device, both sections equally loaded. MRA354 MRA355 handbook,200 halfpage handbook,10 halfpage IC (A) P tot (W) 160 Th = 25 o C o Tmb = 70 C 120 II I 80 40 1 1 10 VCE (V) 0 0 50 20 40 60 80 100 120 o Th ( C) (I) Continuous DC operation. (II) Short time operation during mismatch. Total device, both sections equally loaded. Total device, both sections equally loaded. Fig.2 DC SOAR. September 1991 Fig.3 Power derating curve. 3 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb(DC) from junction to mounting base Pdis = 87 W; Tmb = 70 °C (note 1) 1.5 K/W Rth mb-h from mounting base to heatsink note 1 0.2 K/W Note 1. Total device, both sections equally loaded. CHARACTERISTICS Values apply to either transistor section; Tj = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 20 mA 50 − − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 50 mA 27 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 10 mA 3.5 − − V ICES collector-emitter leakage current VBE = 0; VCE = 27 V − − 10 mA hFE DC current gain VCE = 25 V; IC = 1.6 A 30 − − Cc collector capacitance VCB = 25 V; IE = Ie = 0; f = 1 MHz − 36 45 September 1991 4 pF Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 MRA350 MRA346 handbook,120 halfpage handbook, halfpage Cc (pF) h FE 120 80 80 40 40 0 0 0 1 2 3 0 10 IC (A) VCE = 25 V. IE = ie = 0; f = 1 MHz. Fig.4 Fig.5 DC current gain as a function of collector current, typical values. September 1991 5 20 30 VCB (V) 40 Collector capacitance as a function of collector-base voltage, typical values. Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter push-pull test circuit; Rth mb-h = 0.2 K/W. MODE OF OPERATION c.w. class-A fvision (MHz) VCE (V) ICQ (A) Po sync (W) GP (dB) dim (dB) (note 1) dcm (%) (note 2) 860 25 2 × 1.6 25 > 10 typ. 11.5 < −45 typ. −47 < 20 Notes 1. Three-tone test method: vision carrier −8 dB (860 MHz), sound carrier −7 dB (865.5 MHz), sideband signal −16 dB (861 MHz); zero dB corresponds to peak sync level. 2. Two-tone test method: vision carrier 0 dB (860 MHz), sound carrier −7 dB (865.5 MHz); zero dB corresponds to peak sync level. Cross-modulation distortion (dcm) is the voltage variation (%) of the sound carrier when the vision carrier is switched from 0 dB to −20 dB. MRA351 MRA349 handbook,-40 halfpage -40 handbook, halfpage d im (dB) -42 d im (dB) -50 o Th = 70 C -44 o Th = 25 C Th = 70 o C -46 -60 Th = 25o C -48 -50 -70 0 10 20 1.6 2.4 3.2 30 IC (A) 4 Po sync (W) Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test (−8 dB, −16 dB, −7 dB); ICQ = 2 × 1.6 A. Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test (−8 dB, −16 dB, −7 dB); Po sync = 25 W. Fig.6 Fig.7 Intermodulation distortion as a function of output power. VCE = 25 V, f = 860 MHz, Th = 25 °C, Rth mb-h = 0.2 K/W, ICQ = 2 × 1.6 A, and rated output power. Ruggedness in Class-A operation The BLV58 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: September 1991 Intermodulation distortion as a function of collector current. 6 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 MRA348 MRA356 13 handbook, halfpage handbook, halfpage Po sync GP (dB) (W) 30 Th = 25o C o Th = 25 C 11 20 o Tmb = 70 C o Th = 70 C 9 10 7 0 0 1 2 Pi sync (W) 0 3 Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test (−8 dB, −16 dB, −7 dB); ICQ = 2 × 1.6 A. 20 30 Po sync (W) Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test (−8 dB, −16 dB, −7 dB); ICQ = 2 × 1.6 A. Fig.8 Output power as a function of input power. September 1991 10 Fig.9 7 Gain as a function of output power, typical values. Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 V CC C15 C16 L12 V R1 BB C7 C17 C8 C18 C9 C19 C10 C20 L6 L1 50 Ω input L13 L4 C1 L8 BLV58 C21 L10 L16 C29 C30 L2 L18 C34 L21 C31 C3 C4 C5 C6 C32 C33 L22 L3 C2 L5 L9 L11 T.U.T. L7 L17 L19 C23 C22 C11 C25 C13 C24 C12 C26 C14 VBB handbook, full pagewidth L15 R2 C28 MBC048 C27 VCC Fig.10 Class-A test circuit at f = 860 MHz. September 1991 L20 8 C35 50 Ω output Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 List of components (see test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2, C34, C35 multilayer ceramic chip capacitor (note 1) 15 pF C3 multilayer ceramic chip capacitor (note 1) 3.9 pF C4, C6 film dielectric trimmer 5.5 pF C5 multilayer ceramic chip capacitor (note 1) 7.5 pF C7, C12, C17, C26 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C8, C14, C19, C25 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C9, C11, C16, C20, C22, C28 63 V electrolytic capacitor 10 µF C10, C13, C15, C21, C23, C27 multilayer ceramic chip capacitor (note 1) 330 pF C18, C24 63 V electrolytic capacitor 1 µF C29 multilayer ceramic chip capacitor (note 1) 12 pF C30 multilayer ceramic chip capacitor (note 1) 5.6 pF C31, C33 film dielectric trimmer 3.5 pF C32 multilayer ceramic chip capacitor (note 1) 2.7 pF L1, L3, L20, L22 stripline (note 2) 35 Ω 39 mm × 4 mm L2, L21 semi-rigid cable (note 3) 50 Ω ext. dia. 3.6 mm; length 39 mm L4, L5 stripline (note 2) 38 Ω 19 mm × 3.5 mm L6, L7 RF choke 470 nH 2222 809 09005 2222 809 05001 L8, L9 stripline (note 2) 38 Ω 7.5 mm × 3.5 mm L10, L11 stripline (note 2) 38 Ω 4.5 mm × 3.5 mm L12, L15 grade 3B RF choke L13, L14 1 turn 1.5 mm copper wire 14 nH int. dia 7 mm; leads 2 × 6 mm L16, L17 stripline (note 2) 38 Ω 7 mm × 3.5 mm L18, L19 stripline (note 2) 38 Ω 18 mm × 3.5 mm R1, R2 1 W metal film resistor 10 Ω 4312 020 36642 Notes 1. American Technical Ceramics type 100B or capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE microfibre-glass dielectric (εr = 2.2), thickness 1⁄32 inch, thickness of copper sheet 2 × 35 µm. 3. Cables L2 and L21 are soldered to striplines L1 and L20, respectively. September 1991 9 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 170 mm handbook, full pagewidth rivet (2x) 80 mm copper strap (6x) MBC046 handbook, full pagewidth C9 C7 C8 C10 C18 C16 C17 C19 C21 L12 C2 L2 L13 C30 L16 C31 L6 L4 C3 C5 C4 C6 L5 L8 L10 C29 L9 L11 L18 L17 L14 C26 C25 C23 C11 L20 C34 L19 L7 3 +L C15 R1 L1 C1 C20 C14 C13 C12 R2 C32 C33 C35 L2 L221 + C27 L15 C28 C22 C24 MBC047 The components are mounted on one side of a copper clad PTFE microfibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by hollow rivets and copper straps. Fig.11 Component layout for 860 MHz class-A test circuit. September 1991 10 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 MRA352 6 handbook, halfpage Zi (Ω) ZL (Ω) r MRA353 6 handbook, halfpage i 4 4 RL xi 2 XL 2 0 0 400 500 600 700 -1 400 800 900 f (MHz) 500 600 700 800 900 f (MHz) Class-A operation; VCE = 25 V; ICQ = 1.6 A (per section); PL = 25 W (total device); Th = 25 °C. Class-A operation; VCE = 25 V; ICQ = 1.6 A (per section); PL = 25 W (total device); Th = 25 °C. Fig.12 Input impedance per section (series components) as a function of frequency, typical values. Fig.13 Load impedance per section (series components) as a function of frequency, typical values. MRA347 handbook, 16 halfpage GP (dB) 14 handbook, halfpage 12 Zi ZL MBA451 10 400 500 600 700 800 900 f (MHz) Class-A operation; VCE = 25 V; ICQ = 1.6 A (per section); PL = 25 W (total device); Th = 25 °C. Fig.14 Definition of transistor impedance. September 1991 Fig.15 Power gain as a function of frequency, typical values. 11 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT289A D A F 5 U1 B q C w2 M C H1 1 H c 2 U2 p E w1 M A B A 3 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D E e F H H1 p Q q U1 U2 w1 w2 w3 mm 4.65 3.92 3.33 3.07 0.10 0.05 13.10 12.90 11.53 11.33 4.60 1.65 1.40 19.81 19.05 4.85 4.34 3.43 3.17 2.31 2.06 21.44 28.07 27.81 11.81 11.56 0.51 1.02 0.25 inches 0.183 0.154 0.131 0.004 0.121 0.002 0.516 0.508 0.454 0.181 0.446 0.091 0.844 0.081 1.105 1.095 0.465 0.455 0.02 0.04 0.01 OUTLINE VERSION 0.065 0.780 0.055 0.750 0.191 0.135 0.171 0.125 REFERENCES IEC JEDEC EIAJ SOT289A September 1991 EUROPEAN PROJECTION ISSUE DATE 97-06-28 12 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV58 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1991 13