2SK3440 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3440 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 6.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 30 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 60 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 kΩ) VDGR 60 V Gate-source voltage VGSS ±30 V (Note 1) ID 50 Pulse (Note 1) IDP 200 Drain power dissipation (Tc = 25°C) PD 125 W Single pulse avalanche energy (Note 2) EAS 644 mJ Avalanche current IAR 50 A Repetitive avalanche energy (Note 3) EAR 12.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current A JEDEC ― JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Max Unit Rth (ch-c) 1.00 °C/W Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into the S2 pin. Note 1: Ensure that the channel temperature does not exceed 150°C. 4 Note 2: VDD = 50 V, Tch = 25°C (initial), L = 350 μH, RG = 25 Ω, IAR = 50 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature 1 This transistor is an electrostatic-sensitive device. Please handle with caution. 2 3 1 2006-11-17 2SK3440 Marking Part No. (or abbreviation code) K3440 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Electrical Characteristics (Note 4) (Ta = 25°C) Characteristics Gate leakage current Symbol IGSS Drain cut-off current Drain-source breakdown voltage Test Condition VGS = ±25 V, VDS = 0 V Min Typ. Max Unit ⎯ ⎯ ±10 μA IDSS VDS = 60 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 60 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 25 A ⎯ 6.5 8 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 25 A 15 30 ⎯ S Input capacitance Ciss ⎯ 3700 ⎯ pF Reverse transfer capacitance Crss ⎯ 280 ⎯ pF Output capacitance Coss ⎯ 1320 ⎯ pF ⎯ 12 ⎯ ⎯ 30 ⎯ ⎯ 12 ⎯ ⎯ 50 ⎯ ⎯ 55 ⎯ nC ⎯ 35 ⎯ nC ⎯ 20 ⎯ nC Turn-on time tr VGS ton Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) tf toff ID = 25 A VOUT 10 V 0V VDD ∼ − 30 V RL = 1.2 Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz 4.7 Ω Gate threshold voltage VIN: Duty < = 1%, tw = 10 μs Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VDD ∼ − 48 V, VGS = 10 V, ID = 50 A ns Note 4: Connect the S1 and S2 pins together, and ground them except during switchin time measurement. Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1, Note 5) IDR1 ⎯ ⎯ ⎯ 50 A (Note 1, Note 5) IDRP1 ⎯ ⎯ ⎯ 200 A Continuous drain reverse current (Note 1, Note 5) IDR2 ⎯ ⎯ ⎯ 1 A IDRP2 ⎯ ⎯ ⎯ 4 A ⎯ ⎯ −1.5 V Pulse drain reverse current Pulse drain reverse current (Note 1, Note 5) Forward voltage (diode) VDS2F IDR = 50 A, VGS = 0 V Reverse recovery time trr IDR = 50 A, VGS = 0 V, ⎯ 70 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 123 ⎯ nC Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open. IDR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open. Unless otherwise specified, connect the S1 and S2 pins together, and ground them. 2 2006-11-17 2SK3440 ID – VDS 100 15 10 8.5 8 15 Common source Tc = 25°C, Pulse test 10 8.5 160 7.5 60 Drain current ID (A) Drain current ID (A) 80 Common source Tc = 25°C Pulse test ID – VDS 200 7 40 6.5 20 8 120 7.5 80 7 6.5 40 6 6 VGS = 5.5 V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 VGS = 5.5 V 0 0 1.0 1 VDS (V) 2 Drain-source voltage 5 VDS (V) 1.2 Common source VDS = 10 V Pulse test VDS (V) Common source 60 Drain-source voltage Drain current ID (A) 80 4 VDS – VGS ID – VGS 100 3 40 Tc = −55°C 100 20 25 Tc = 25°C 1 Pulse test 0.8 0.6 0.4 ID = 50 A 0.2 25 12 0 0 2 4 6 Gate-source voltage 8 0 0 10 VGS (V) 4 8 Gate-source voltage ⎪Yfs⎪ – ID Common source 20 24 VGS (V) RDS (ON) – ID Common source Tc = −55°C VDS = 10 V (S) Pulse test 25°C Tc = 25°C 100°C Pulse test Drain-source on resistance RDS (ON) (mΩ) Forward transfer admittance ⎪Yfs⎪ 16 100 100 10 1 1 12 10 10 VGS = 10 V 15 1 100 Drain current ID (A) 10 100 Drain current ID (A) 3 2006-11-17 2SK3440 RDS (ON) – Tc Common source VGS = 10 V Pulse test (A) ID = 50 A 10 25 12 8 6 4 2 Common source Tc = 25°C Pulse test 100 10 1 3 10 0 −80 −40 0 40 80 120 0.1 0 160 −0.2 Case temperature Tc (°C) −0.4 Capacitance – VDS −1 −0.8 −1.2 −1.4 VDS (V) Vth – Tc Vth (V) 1000 Gate threshold voltage Coss Crss 100 Common source VGS = 0 V f = 1 MHz 5 4 3 2 1 0 −80 Tc = 25°C 10 0.1 1 10 Drain-source voltage 0 80 40 120 160 Case temperature Tc (°C) VDS (V) PD – Tc Dynamic input/output characteristics VDS (V) 100 160 Drain-source voltage 120 80 40 80 −40 100 200 40 Common source VDS = 10 V ID = 1 mA Pulse test 120 160 80 Case temperature Tc (°C) 16 VDS = 12 V 60 12 VDS 48 24 40 8 VGS 4 20 0 0 200 20 Common source ID = 50 A Tc = 25°C Pulse test 20 40 60 80 100 VGS (V) (pF) Capacitance C −0.6 6 Ciss Drain power dissipation PD (W) VGS = 0 V Drain-source voltage 10000 10 0 1 Gate-source voltage Drain-source on resistance RDS (ON) (m Ω) 12 IDR – VDS 1000 Drain reverse current IDR 14 0 120 Total gate charge Qg (nC) 4 2006-11-17 2SK3440 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 PDM 0.1 0.1 t 0.05 T 0.02 0.01 Duty = t/T Rth (ch-c) = 1.0°C/W Single pulse 0.01 10 μ 100 μ 1m 10 m Pulse width 100 m tw 1 (s) Safe operating area EAS – Tch 500 1000 ID max (pulsed) * Avalanche energy EAS (mJ) 300 Drain current ID (A) 100 50 100 μs * ID max (continuous) 1 ms * 30 10 10 800 600 400 200 DC operation 5 0 25 *: Single nonrepetitive pulse 3 Tc = 25°C 50 75 100 125 150 Channel temperature (initial) Tch (°C) Curves must be derated linearly with increase in temperature 1 1 3 10 Drain-source voltage 30 100 15 V VDS (V) BVDSS IAR 0V VDS VDD Test circuit RG = 25 Ω VDD = 50 V, L = 350 μH 5 Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2006-11-17 2SK3440 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-17