2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOSV) 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.) High forward transfer admittance: ⎪Yfs⎪ = 17 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 150 V) Enhancement mode: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 150 V Drain-gate voltage (RGS = 20 kΩ) VDGR 150 V Gate-source voltage V VGSS ±20 (Note 1) ID 18 Pulse (Note 1) IDP 54 Drain power dissipation (Tc = 25°C) PD 100 W Single pulse avalanche energy (Note 2) EAS 176 mJ Avalanche current IAR 18 A Repetitive avalanche energy (Note 3) EAR 10 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C DC Drain current A JEDEC ― JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Max Unit Rth (ch-c) 1.25 °C/W Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin. Note 1: Ensure that the channel temperature does not exceed 150°C. 4 Note 2: VDD = 50 V, Tch = 25°C (initial), L = 800 μH, RG = 25 Ω, IAR = 18 A Note 3: Repetitive rating: pulse width limited by max junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2 3 1 2006-11-20 2SK3387 Marking Part No. (or abbreviation code) K3387 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Electrical Characteristics (Note 4) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = 150 V, VGS = 0 V ⎯ ⎯ 100 μA Gate threshold voltage V (BR) DSS ID = 10 mA, VGS = 0 V 150 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 0.8 ⎯ 2.0 V VGS = 4 V, ID = 9 A ⎯ 0.09 0.18 VGS = 10 V, ID = 9 A ⎯ 0.08 0.12 VDS = 10 V, ID = 9 A 10 17 ⎯ ⎯ 1380 ⎯ ⎯ 200 ⎯ ⎯ 610 ⎯ ⎯ 12 ⎯ ⎯ 20 ⎯ ⎯ 12 ⎯ ⎯ 68 ⎯ ⎯ 57 ⎯ nC ⎯ 43 ⎯ nC ⎯ 14 ⎯ nC Drain-source ON resistance RDS (ON) Forward transfer admittance ⎪Yfs⎪ Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr Turn-on time ID = 9 A 10 V VGS1 G Switching time Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) VOUT D 0V ton S1 RL = 11 Ω 4.7 Ω Drain-source breakdown voltage S2 Duty < = 1%, tw = 10 μs VDD ∼ − 100 V Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VDD ∼ − 120 V, VGS = 10 V, ID = 18 A Ω S pF ns Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement. Source-Drain Diode Ratings and Characteristics (Note 5) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit A Continuous drain reverse current (Note 1, 5) IDR1 ⎯ ⎯ ⎯ 18 Pulse drain reverse current (Note 1, 5) IDRP1 ⎯ ⎯ ⎯ 54 A Continuous drain reverse current (Note 1, 5) IDR2 ⎯ ⎯ ⎯ 1 A Pulse drain reverse current (Note 1, 5) IDRP2 ⎯ ⎯ ⎯ 4 A Diode forward voltage VDS2F IDR1 = 18 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 18 A, VGS = 0 V, ⎯ 185 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 1.3 ⎯ μC Note 5: IDR1, IDRP1:Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open. IDR2, IDRP2:Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open. Unless otherwise specified, connect the S1 and S2 pins together, and ground them 2 2006-11-20 2SK3387 ID – VDS 4 8 Drain current ID (A) 16 ID – VDS Common source Tc = 25°C Pulse test 3.8 6 50 10 40 Drain current ID (A) 20 3.5 12 3.2 8 VGS = 3 V 4 Common source Tc = 25°C Pulse test 6 10 5 8 4.5 30 4 20 3.5 10 3 VGS = 2.5 V 0 0 1 2 3 Drain-source voltage 4 0 0 5 2 VDS (V) 4 6 8 Drain-source voltage ID – VGS VDS (V) VDS – VGS 30 4 Common source Common source VDS (V) VDS = 10 V Pulse test 20 Drain-source voltage Drain current ID (A) 10 Tc = −55°C 10 25 100 Tc = 25°C Pulse test 3 2 ID = 18 A 1 9 3 0 0 1 2 3 Gate-source voltage 4 0 0 5 VGS (V) 2 4 Common source Tc = −55°C VDS = 10 V 25 Pulse test 100 10 5 3 1 1 3 5 10 12 VGS (V) RDS (ON) – ID 1000 Drain-source on resistance RDS (ON) (mΩ) (S) Forward transfer admittance ⎪Yfs⎪ 30 8 Gate-source voltage ⎪Yfs⎪ – ID 50 6 10 30 50 500 Drain current ID (A) Tc = 25°C Pulse test 300 4 100 VGS = 10 V 50 30 10 0.1 100 Common source 0.3 0.5 1 3 5 10 30 50 Drain current ID (A) 3 2006-11-20 2SK3387 RDS (ON) – Tc IDR – VDS 200 100 Common source Common source (A) 160 ID = 18 A 120 Drain reverse current IDR Drain-source on resistance RDS (ON) (mΩ) Pulse test 9 4.5 80 VGS = 10 V 40 0 −80 −40 0 40 80 Case temperature Tc 120 Tc = 25°C 50 Pulse test 30 10 10 5 5 3 3 1 0 160 −0.4 (°C) −0.8 Capacitance – VDS VDS (V) Vth – Tc Common source Vth (V) Ciss 1000 500 300 Gate threshold voltage (pF) −1.6 4 3000 Capacitance C −1.2 Drain-source voltage 5000 100 VGS = 0, −1 V 1 Coss Common source Crss 50 VGS = 0 V 30 f = 1 MHz Tc = 25°C VDS = 10 V 3 ID = 1 mA Pulse test 2 1 Pulse test 1 3 5 Drain-source voltage 30 50 10 0 −80 100 VDS (V) PD – Tc 40 80 120 160 (°C) Dynamic input/output characteristics 160 VDS (V) 100 Drain-source voltage Drain power dissipation PD (W) 0 Case temperature Tc 150 50 0 0 −40 40 80 Case temperature Tc 120 120 (°C) 12 30 VDS 80 60 8 VDD = 120 V 40 0 0 160 16 Common source ID = 18 A Tc = 25°C Pulse test VGS 20 40 60 4 VGS (V) 0.3 0.5 Gate-source voltage 10 0.1 0 Total gate charge Qg (nC) 4 2006-11-20 2SK3387 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 0.5 0.2 PDM 0.1 t 0.1 T Single pulse 0.05 Duty = t/T Rth (ch-c) = 1.25°C/W 0.02 0.01 0.01 0.00001 0.0001 0.001 0.01 Pulse width 0.1 tw 1 10 (S) Safe operating area EAS – Tch 100 200 ID max (pulsed) * 50 (A) 10 Drain current ID 5 3 Avalanche energy EAS (mJ) 100 μs * 30 ID max (continuous) * 1 ms * DC operation Tc = 25°C 160 120 80 40 1 0.5 0.3 * Single nonrepetitive pulse 0 25 Tc = 25°C 50 Curves must be derated 75 100 125 150 Channel temperature (initial) Tch (°C) linearly with increase in temperature. 0.1 1 3 VDSS max 10 30 Drain-source voltage 100 300 15 V VDS (V) BVDSS IAR −15 V VDD Test circuit RG = 25 Ω VDD = 50 V, L = 0.8 mH 5 VDS Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − ⎝ VDSS VDD ⎠ 2006-11-20 2SK3387 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-20