General purpose transistor (isolated dual transistors) IMX25 Dimensions (Unit : mm) 1.1 +0.2 −0.1 2.9±0.2 1.9±0.2 0.8±0.1 0.95 0.95 (6) 1.6 Structure Epitaxial planar type NPN silicon transistor (2) (1) +0.1 0.3 −0.05 (3) 0 to 0.1 +0.1 0.15 −0.06 All terminals have same dimensions The following characteristics apply to both Tr1 and Tr2. ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol: X25 Absolute maximum ratings (Ta=25C) Parameter 2.8±0.2 (5) +0.2 −0.1 (4) 0.3 to 0.6 Features 1) Two 2SD2704K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Inner circuit Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 300 mA Power dissipation Pd 300(TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C (4) (5) (6) Tr1 Tr2 (3) ∗ (2) (1) ∗ 200mW per element must not be exceeded. Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO 50 − − V IC=10μA Collector-emitter breakdown voltage BVCEO 20 − − V IC=1mA Emitter-base breakdown voltage Parameter Unit Conditions BVEBO 25 − − V IE=10μA Collector cutoff current ICBO − − 0.1 μA VCB=50V Emitter cutoff current IEBO − − 0.1 μA VEB=25V VCE(sat) − 50 100 mV IC/IB=30mA/3mA hFE 820 − 2700 − VCE=2V, IC=4mA Collector-emitter saturation voltage DC current transfer ratio fT − 35 − MHz Output capacitance Cob − 3.9 − pF VCB=10V, IE=0A, f=1MHz Output On-resistance Ron − 0.7 − Ω IB=5mA, Vi=100mVrms, f=1kHz Transition frequency VCE=6V, IE=−4mA, f=10MHz Packaging specifications Packaging type Part No. Taping Code T110 Basic ordering unit (pieces) 3000 IMX25 www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/3 2010.02 - Rev.B IMX25 Data Sheet Electrical characteristic curves 25°C −40°C 0.1 0.2 0.4 0.6 0.8 1 Ta=125°C 100 25°C 0.1 1000 Ta=25°C Ta= −40°C 100 10 1 10 100 1000 ) IC/IB=50/1 1000 Ta=125°C 100 Ta=25°C Ta= −40°C 10 1 1 10 100 0.8 1 Ta= −40°C 100 10 1.2 1 IC/IB=10/1 1000 Ta=125°C 100 Ta=25°C 10 Ta= −40°C 1 1 10 100 1000 1000 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ IC/IB=10/1 Ta= −40°C 1000 Ta=125°C 100 1 Ta=25°C 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.8 Base-emitter saturation voltage vs. collector current ( ) 2/3 100 1000 Fig.3 DC current gain vs. collector current ( ) 10000 IC/IB=20/1 1000 Ta=125°C 100 Ta=25°C 10 Ta= −40°C 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.5 Collector-emitter saturation voltage vs. collector current ( ) 10000 10 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) BASE SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 10000 0.6 10000 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( 0.4 Ta=25°C Fig.2 Grounded emitter propagation characteristics ( ΙΙ ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) DC CURRENT GAIN : hFE Ta=125°C 0.2 1000 BASE TO EMITTER VOLTAGE : VBE(ON) (V) Fig.1 Grounded emitter propagation characteristics ( Ι ) VCE=6V −40°C 10 BASE TO EMITTER VOLTAGE : VBE(ON) (V) 10000 VCE=2V Ta=125°C 0.1 0 1.2 10000 Fig.6 Collector-emitter saturation voltage vs. collector current ( ) BASE SATURATION VOLTAGE : VBE(sat) (mV) 0.1 0 VCE=6V DC CURRENT GAIN : hFE Ta=125°C 100 10 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) VCE=2V COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 1000 10000 IC/IB=20/1 Ta= −40°C 1000 Ta=125°C 100 1 10 Ta=25°C 100 1000 COLLECTOR CURRENT : IC (mA) Fig.9 Base-emitter saturation voltage vs. collector current ( ) 2010.02 - Rev.B Data Sheet 10000 Ta= −40°C 1000 Ta=125°C 100 IC/IB=50/1 1 Ta=25°C 10 100 1 1000 Ta=25°C f=50MHz IE=0A 1 COLLECTOR CURRENT : IC (mA) 10 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 10000 TRANSITION FREQUENCY : fT (MHz) BASE SATURATION VOLTAGE : VBE(sat) (mV) IMX25 100 Ta=25°C f=1MHz IE=0A 10 1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.10 Base-emitter saturation voltage vs. collector current ( ) 100 Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.11 Gain bandwidth product vs. emitter current 100 Ta= 25°C ON RESISTANCE : Ron (Ω) ON RESISTANCE : Ron (Ω) 100 10 1 0.1 See Fig.15 0.01 0.1 1 10 Ta=25°C 10 1 0.1 See Fig.16 0.01 0.1 100 BASE CURRENT : IB (mA) 1 10 100 BASE CURRENT : IB (mA) Fig.13 Output-on resistance vs. base current ( ) Ron measurement circuit Fig.14 Output-on resistance vs. base current ( ) RL=1kΩ RL=1kΩ Input Vi 100mV(rms) 1V(rms) f=1kHz V Output v0 IB Ron= v0 vi−v0 Input Vi 100mV(rms) 1V(rms) f=1kHz V Output v0 IB ×RL Fig.15 Ron measurement circuit ( ) Ron= v0 vi−v0 ×RL Fig.16 Ron measurement circuit ( ) This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 3/3 2010.02 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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