MOTOROLA MRF1550FT1

Freescale Semiconductor, Inc.
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by MRF1550T1/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
Freescale Semiconductor, Inc...
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common source amplifier applications in
12.5 volt mobile FM equipment.
• Specified Performance @ 175 MHz, 12.5 Volts
Output Power — 50 Watts
Power Gain — 12 dB
Efficiency — 50%
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Broadband–Full Power Across the Band: 135–175 MHz
• Broadband Demonstration Amplifier Information Available
Upon Request
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
175 MHz, 50 W, 12.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264–09, STYLE 1
TO–272
PLASTIC
MRF1550T1
CASE 1264A–02, STYLE 1
TO–272 STRAIGHT LEAD
PLASTIC
MRF1550FT1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
40
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
12
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
PD
165
0.50
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
175
°C
Symbol
Max
Unit
RθJC
0.75
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Calculated based on the formula PD =
TJ – TC
RθJC
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2003
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MRF1550T1 MRF1550FT1
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate–Source Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
IGSS
—
—
0.5
µAdc
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 800 µA)
VGS(th)
1
—
3
Vdc
Drain–Source On–Voltage
(VGS = 5 Vdc, ID = 1.2 A)
RDS(on)
—
—
0.5
Ω
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 4.0 Adc)
VDS(on)
—
—
1
Vdc
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Ciss
—
—
500
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Coss
—
—
250
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Crss
—
—
35
pF
10
—
—
50
—
—
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
Freescale Semiconductor, Inc...
DYNAMIC CHARACTERISTICS
RF CHARACTERISTICS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA)
f = 175 MHz
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA)
f = 175 MHz
Load Mismatch
(VDD = 15.6 Vdc, f = 175 MHz, 2 dB Input Overdrive, VSWR 20:1 at
All Phase Angles)
MRF1550T1 MRF1550FT1
2
Gps
η
Ψ
dB
%
No Degradation in Output Power
Before and After Test
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
B1
C1
C2
C3
C4, C16
C5
C6
C7, C17
C8, C18
C9, C19
C10
C11, C12
C13
C14
C15
C20
L1
L2
L3
L4
L5
N1, N2
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Z11
Board
Ferroxcube #VK200
180 pF, 100 mil Chip Capacitor
10 pF, 100 mil Chip Capacitor
33 pF, 100 mil Chip Capacitor
24 pF, 100 mil Chip Capacitors
160 pF, 100 mil Chip Capacitor
240 pF, 100 mil Chip Capacitor
300 pF, 100 mil Chip Capacitors
10 µF, 50 V Electrolytic Capacitors
0.1 µF, 100 mil Chip Capacitors
470 pF, 100 mil Chip Capacitor
200 pF, 100 mil Chip Capacitors
22 pF, 100 mil Chip Capacitor
30 pF, 100 mil Chip Capacitor
6.8 pF, 100 mil Chip Capacitor
1,000 pF, 100 mil Chip Capacitor
18.5 nH, Coilcraft #A05T
5 nH, Coilcraft #A02T
1 Turn, #24 AWG, 0.250″ ID
1 Turn, #26 AWG, 0.240″ ID
3 Turn, #24 AWG, 0.180″ ID
Type N Flange Mounts
5.1 Ω, 1/4 W Chip Resistor
39 Ω Chip Resistor (0805)
1 kΩ, 1/8 W Chip Resistor
33 kΩ, 1/4 W Chip Resistor
1.000″ x 0.080″ Microstrip
0.400″ x 0.080″ Microstrip
0.200″ x 0.080″ Microstrip
0.200″ x 0.080″ Microstrip
0.100″ x 0.223″ Microstrip
0.160″ x 0.080″ Microstrip
0.260″ x 0.080″ Microstrip
0.280″ x 0.080″ Microstrip
0.270″ x 0.080″ Microstrip
0.730″ x 0.080″ Microstrip
Glass Teflon, 31 mils
Figure 1. 135 – 175 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS
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Freescale Semiconductor, Inc...
,-.
,-.
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Figure 2. Output Power versus Input Power
MOTOROLA RF DEVICE DATA
+
(
,-.
(
,-.
(
,-.
(
!"#$
Figure 3. Input Return Loss
versus Output Power
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MRF1550T1 MRF1550FT1
3
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
,-.
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,-.
,-.
,-.
,-.
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Figure 4. Gain versus Output Power
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3%!4$
,-.
,-.
,-.
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)* / &'2
1 '"# !2"$
,-.
,-.
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Figure 6. Output Power versus Biasing Current
1 '"# !2"$
Figure 7. Drain Efficiency versus
Biasing Current
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Figure 5. Drain Efficiency versus Output Power
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Freescale Semiconductor, Inc...
,-.
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Figure 8. Output Power versus Supply Voltage
MRF1550T1 MRF1550FT1
4
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Figure 9. Drain Efficiency versus Supply Voltage
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
/ Ω
5 / ,-.
5 / ,-.
)*
Freescale Semiconductor, Inc...
6
5 / ,-.
5 / ,-.
/ + 1 / 2" / Zin
f
MHz
Zin
Ω
ZOL*
Ω
135
4.1 + j0.5
1.0 + j0.6
155
4.2 + j1.7
1.2 + j.09
175
3.7 + j2.3
0.7 + j1.1
= Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
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Figure 10. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
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MRF1550T1 MRF1550FT1
5
Freescale Semiconductor, Inc.
Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc)
Freescale Semiconductor, Inc...
IDQ = 500 mA
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.93
–178
4.817
80
0.009
–39
0.86
–176
100
0.94
–178
2.212
69
0.009
–3
0.88
–175
150
0.95
–178
1.349
61
0.008
–8
0.90
–174
200
0.95
–178
0.892
54
0.006
–13
0.92
–174
250
0.96
–178
0.648
51
0.005
–7
0.93
–174
300
0.97
–178
0.481
47
0.004
–8
0.95
–174
350
0.97
–178
0.370
46
0.005
4
0.95
–174
400
0.98
–178
0.304
43
0.001
15
0.97
–174
450
0.98
–178
0.245
43
0.005
81
0.97
–174
500
0.98
–178
0.209
43
0.003
84
0.97
–174
550
0.99
–177
0.178
41
0.007
70
0.98
–175
600
0.98
–178
0.149
41
0.010
106
0.96
–175
IDQ = 2.0 mA
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.93
–177
4.81
80
0.003
–119
0.93
–178
100
0.94
–178
2.20
69
0.006
4
0.93
–178
150
0.95
–178
1.35
61
0.003
–1
0.93
–177
200
0.95
–178
0.89
54
0.004
18
0.93
–176
250
0.96
–178
0.65
51
0.001
28
0.94
–176
300
0.97
–178
0.48
47
0.004
77
0.94
–175
350
0.97
–178
0.37
46
0.006
85
0.95
–175
400
0.98
–178
0.30
43
0.007
53
0.96
–174
450
0.98
–178
0.25
43
0.006
74
0.97
–174
500
0.98
–177
0.21
44
0.006
84
0.97
–174
550
0.99
–177
0.18
41
0.002
106
0.97
–175
600
0.98
–178
0.15
41
0.004
116
0.96
–174
IDQ = 4.0 mA
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.97
–179
5.04
87
0.002
–116
0.94
–179
100
0.96
–179
2.43
82
0.006
42
0.94
–178
150
0.96
–179
1.60
77
0.004
13
0.94
–177
200
0.96
–179
1.14
74
0.003
43
0.95
–176
250
0.97
–179
0.89
71
0.004
65
0.95
–175
300
0.97
–179
0.71
68
0.006
68
0.95
–175
350
0.97
–179
0.57
67
0.006
74
0.97
–174
MRF1550T1 MRF1550FT1
6
MOTOROLA RF DEVICE DATA
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Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc) (continued)
IDQ = 4.0 mA (continued)
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
400
0.97
–179
0.49
63
0.005
58
0.97
–173
450
0.98
–178
0.41
63
0.005
73
0.98
–173
500
0.98
–178
0.36
62
0.003
128
0.98
–173
550
0.98
–178
0.32
58
0.004
57
0.99
–174
600
0.98
–178
0.27
58
0.009
83
0.98
–174
Freescale Semiconductor, Inc...
f
MHz
MOTOROLA RF DEVICE DATA
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MRF1550T1 MRF1550FT1
7
Freescale Semiconductor, Inc.
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APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common–source, RF power, N–Channel
enhancement mode, Lateral Metal–Oxide Semiconductor
Field–Effect Transistor (MOSFET). Motorola Application
Note AN211A, “FETs in Theory and Practice”, is suggested
reading for those not familiar with the construction and characteristics of FETs.
This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications.
Manufacturability is improved by utilizing the tape and reel
capability for fully automated pick and placement of parts.
However, care should be taken in the design process to insure proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mismatched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (Cgd), and
gate–to–source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance
from drain–to–source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer
(Crss) capacitances on data sheets. The relationships between the inter–terminal capacitances and those given on
data sheets are shown below. The Ciss can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF applications.
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DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full–on condition. This on–resistance, RDS(on), occurs
in the linear region of the output characteristic and is specified at a specific gate–source voltage and drain current. The
MRF1550T1 MRF1550FT1
8
drain–source voltage under these conditions is termed
VDS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high – on the order of 109 Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open–circuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended.
Using a resistor to keep the gate–to–source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate–drain capacitance. If the
gate–to–source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate–threshold voltage
and turn the device on.
DC BIAS
Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (IDQ), whose value is application dependent.
This device was characterized at IDQ = 150 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
MOTOROLA RF DEVICE DATA
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impedances are provided, and will yield a good first pass
approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region.
Two–port stability analysis with this device’s
S–parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See
Motorola Application Note AN215A, “RF Small–Signal
Design Using Two–Port Parameters” for a discussion of two
port network theory and stability.
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MOUNTING
The specified maximum thermal resistance of 0.75°C/W
assumes a majority of the 0.170″ x 0.608″ source contact on
the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Motorola Application
Note AN4005/D, “Thermal Management and Mounting Method for the PLD–1.5 RF Power Surface Mount Package,” and
Engineering Bulletin EB209/D, “Mounting Method for RF
Power Leadless Surface Mount Transistor” for additional information.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Motorola Application Note AN721, “Impedance Matching
Networks Applied to RF Power Transistors.” Large–signal
MOTOROLA RF DEVICE DATA
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MRF1550T1 MRF1550FT1
9
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
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Freescale Semiconductor, Inc...
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CASE 1264–09
ISSUE J
TO–272
PLASTIC
MRF1550T1
MRF1550T1 MRF1550FT1
10
NOTE 6
3
2
1
E2
VIEW Y–Y
E
DATUM
PLANE
DRAIN ID
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MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
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Freescale Semiconductor, Inc...
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CASE 1264A–02
ISSUE A
TO–272 STRAIGHT LEAD
PLASTIC
MRF1550FT1
MOTOROLA RF DEVICE DATA
NOTE 5
3
2
1
CCC " '
VIEW Y–Y
c1
D
DRAIN ID
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INCHES
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MILLIMETERS
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MRF1550T1 MRF1550FT1
11
Freescale Semiconductor, Inc...
Freescale Semiconductor, Inc.
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
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MRF1550T1 MRF1550FT1
12
MOTOROLA RF DEVICE DATA
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MRF1550T1/D