SHENZHEN LONGJINGWEI ELETRONICS CO.,LTD. TO-92 Plastic-Encapsulate Transistors ALJ13001 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.2 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA , IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 7 V Collector cut-off current ICBO VCB= 600V , IE=0 100 µA Collector cut-off current ICEO VCE= 400V, IB=0 200 µA Emitter cut-off current IEBO VEB= 7V, IC=0 100 µA hFE(1) VCE= 20V, IC= 20mA 10 hFE(2) VCE= 10V, IC= 0.25 mA 5 Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10mA 1.2 V Transition frequency fT VCE= 20V, IC=20mA f = 1MHz Fall time tf Storage time tS 40 DC current gain 8 MHz IC=50mA, IB1=-IB2=5mA, VCC=45V 0.3 µs 1.5 µs CLASSIFICATION OF hFE(1) Range 10-13 13-16 16-19 19-22 22-25 25-28 28-31 31-34 34-37 37-40