2SB1739 / 2SD2720 Ordering number : ENA0437A SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1739 / 2SD2720 Compact Motor Driver Applications Features • • • • Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity. Specifications ( ) : 2SB1739 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)40 V Collector-to-Emitter Voltage VCEO (--)30 V Emitter-to-Base Voltage VEBO (--)6 V IC (--)3 A ICP (--)5 A 1 W Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 15 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO hFE1 VCB=(--)30V, IE=0A VCE=(--)2V, IC=(--)0.5A hFE2 VCE=(--)2V, IC=(--)2A VCE=(--)2V, IC=(--)0.5A VCB=(--)10V, f=1MHz fT Cob Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitterr Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Diode Forwad Voltage V(BR)CBO V(BR)CEO1 V(BR)CEO2 VF Base-to-Emitter Resistance Conditions RBE Ratings min typ (--)1.0 Unit µA 70 50 100 MHz (55)40 IC=(--)2A, IB=(--)100mA IC=(--)2A, IB=(--)100mA IC=(--)10µA, IE=0A IC=(--)10µA, RBE=∞ IC=(--)10mA, RBE=∞ max (--0.28)0.23 pF (--0.6)0.5 V (--)1.5 V (--)40 V (--)40 V (--)30 V IF=(--)0.5A (--)1.5 0.8 V kΩ Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83006 MS IM / 72006EA MS IM TC-00000064 No. A0437-1/5 2SB1739 / 2SD2720 Package Dimensions unit : mm (typ) 7003-003 0.5 1.5 1.5 4 5.5 7.0 5.5 4 2.3 6.5 5.0 0.5 0.5 1 2 2.3 0.8 1 7.5 0.8 1.6 0.6 1.2 2.5 0.85 0.85 0.7 1.2 2.3 6.5 5.0 7.0 Package Dimensions unit : mm (typ) 7518-003 2 3 0 to 0.2 0.6 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector 3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector 1.2 2.3 2.3 SANYO : TP-FA SANYO : TP Electrical Connection Collector Base RBE RBE Emitter IC -- VCE 2SB1739 A m --9 --0.9 0m A --6mA --1 --5mA --0.6 --4mA --0.5 --0.4 --3mA --0.3 --2mA --0.2 A 0.9 --7mA 6mA 0.8 0.7 5mA 0.6 4mA 0.5 0.4 3mA 0.3 2mA IB=0mA 0.1 --1mA 0 1mA 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 Collector-to-Emitter Voltage, VCE -- V 0 --2.0 --8mA --6mA --1.0 0.4 0.5 IT11150 18mA --18mA --16mA --14mA --12mA --10mA --1.5 0.3 20mA 2SD2720 --4mA --0.5 16mA 2.5 Collector Current, IC -- A --20mA 0.2 IC -- VCE 3.0 2SB1739 --2.5 0.1 Collector-to-Emitter Voltage, VCE -- V IT11149 IC -- VCE --3.0 Collector Current, IC -- A 7mA 9m 0.2 IB=0mA --0.1 8mA 2SD2720 --0.8 --0.7 IC -- VCE 1.0 --8mA Collector Current, IC -- A --1.0 Collector Current, IC -- A Emitter mA Base Collector 2SD2720 10 2SB1739 14mA 2.0 12mA 10mA 1.5 8mA 6mA 1.0 4mA 0.5 --2mA IB=0mA 0 0 --2 --4 --6 --8 Collector-to-Emitter Voltage, VCE -- V --10 IT11151 IB=0mA 2mA 0 0 2 4 6 8 Collector-to-Emitter Voltage, VCE -- V 10 IT11152 No. A0437-2/5 2SB1739 / 2SD2720 IC -- VBE --3.0 IC -- VBE 3.0 2SB1739 VCE= --2V 2SD2720 VCE=2V --2.0 --1.5 --1.0 --0.5 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V 0 hFE -- IC 3 2 100 C 5° =7 Ta 5°C C 2 5° --2 5 3 2 3 5 2 7 --0.1 3 5 7 --1.0 2 3 1.2 IT11154 hFE -- IC 100 C 5° =7 °C a T 25 C 5° --2 7 5 3 2 2 7 0.1 3 5 7 1.0 2 C 25° 5°C 5°C --2 5 2 3 3 5 IT11156 VCE(sat) -- IC 2SD2720 IC / IB=20 5 3 7 5 7 2SB1739 IC / IB=20 =7 Ta 3 Collector Current, IC -- A VCE(sat) -- IC --0.1 2 IT11155 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 1.0 2SD2720 VCE=2V 5 0.01 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 7 3 2 25° C °C 75 0.1 = Ta 7 5 5°C --2 3 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 2 0.1 5 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 25°C Ta= --25°C 75°C 7 5 2 3 5 7 --1.0 Collector Current, IC -- A 3 2 3 5 IT11159 5 7 1.0 2 3 Collector Current, IC -- A 5 IT11158 VBE(sat) -- IC 3 2SB1739 IC / IB=20 --1.0 2 IT11157 VBE(sat) -- IC 3 3 --0.1 0.8 7 Collector Current, IC -- A 2 --0.1 0.6 10 7 5 --0.01 0.4 Base-to-Emitter Voltage, VBE -- V 2SB1739 VCE= --2V 7 0.2 IT11153 DC Current Gain, hFE DC Current Gain, hFE --1.4 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 1.0 0 0 2 1.5 0.5 0 3 2.0 Ta= -25°C 25°C 75°C Collector Current, IC -- A 2.5 Ta= -25°C 25°C 75°C Collector Current, IC -- A --2.5 2SD2720 IC / IB=20 2 25°C Ta= --25°C 1.0 75°C 7 5 3 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT11160 No. A0437-3/5 2SB1739 / 2SD2720 VCE(sat) -- IB 5 3 25°C Ta=75° C 2 --25°C --0.1 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Base Current, IB -- A 3 2SD2720 IC=2A 5 3 25°C Ta=75°C 2 --25°C 0.1 7 5 2 3 5 7 2 0.1 3 5 7 2 1.0 Base Current, IB -- A IT11161 VCE(sat) -- IB --1.0 VCE(sat) -- IB 7 2SB1739 IC= --2A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 2SD2720 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 VCE(sat) -- IB 1.0 2SB1739 5 3 IC= --2A 2 --1A --0.1 --0.5A 7 5 5 3 IC=2A 2 1A 0.1 5 3 2 2 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Base Current, IB -- A 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Base Current, IB -- A IT11163 Cob -- VCB 3 0.5A 7 3 5 100 7 5 3 2SD2720 f=1MHz 2 2 2 IT11164 Cob -- VCB 3 2SB1739 f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 3 IT11162 100 7 5 3 2 3 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 7 5 3 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 3 5 7 1.0 5 IT11167 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 5 IT11166 f T -- IC 3 100 2 2 IT11165 2SB1739 VCE= --2V 2 2 --0.01 10 0.1 5 f T -- IC 3 Gain-Bandwidth Product, f T -- MHz 3 Gain-Bandwidth Product, f T -- MHz 2 --0.1 2SD2720 VCE=2V 2 100 7 5 3 2 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT11168 No. A0437-4/5 2SB1739 / 2SD2720 ASO 3 2 DC 1.0 s ms 0m s 10 op era tio n, 1W (N o he at sin k) 0.1 7 5 2SB1739 / 2SD2720 Ta=25°C Single Pulse Mounted on a ceramic board (250mm2✕0.8mm) For PNP minus sign is omitted. 3 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 0.6 0.5 0.4 0.3 0.2 0.1 0 2 Collector-to-Emitter Voltage, VCE -- V 0.7 k in 3 2 0.8 s at he P C= 0.9 o 1.0 7 5 2SB1739 / 2SD2720 1m 10 Collector Dissipation, PC -- W IC=3A PC -- Ta 1.1 ICP=5A N Collector Current, IC -- A 10 7 5 3 5 IT11169 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11170 PC -- Tc 16 2SB1739 / 2SD2720 15 Collector Dissipation, PC -- W 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11171 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. PS No. A0437-5/5