2SC4422 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC4422 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2 V Collector current IC 50 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 15 — — V I C = 10 µA, IE = 0 Collector cutoff current I CBO — — 1 µA VCB = 12 V, IE = 0 I CEO — — 1 µA VCE = 10 V, RBE = ∞ Emitter cutoff current I EBO — — 1 µA VEB = 1 V, IC = 0 DC current transfer ratio hFE 50 — 250 Collector output capacitance Cob — 1.2 1.6 pF VCB = 5 V, IE = 0, f = 1 MHz Gain bandwidth product fT 4.5 6.0 — GHz VCE = 5 V, IC = 20 mA Power gain PG 7.0 9.0 — dB VCE = 5 V, IC = 20 mA, f = 900 MHz Noise figure NF — 1.6 3.0 dB VCE = 5 V, IC = 5 mA, f = 900 MHz Note: Marking is “CR”. 2 VCE = 5 V, IC = 20 mA 2SC4422 Typical Output Characteristic 20 600 150 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 400 200 125 100 12 75 8 50 IB = 25 µA 4 0 50 100 150 Ambient Temperature Ta (°C) 0 16 2 4 6 8 10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Gain Bandwidth Product vs. Collector Current 10 Gain Bandwidth Product fT (GHz) DC Current Transfer Ratio hFE 200 VCE = 5 V 160 120 80 40 0 VCE = 5 V 8 6 4 2 0 1 2 5 10 20 Collector Current IC (mA) 50 1 2 5 10 20 Collector Current IC (mA) 50 3 2SC4422 Power Gain vs. Collector Current 20 2.0 VCE = 0 f = 900 MHz IE = 0 f = 1 MHz 1.6 Power Gain PG (dB) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 1.2 0.8 16 12 8 4 0.4 0 0 1 2 5 10 20 50 Collector to Base Voltage VCB (V) 1 2 5 10 20 Collector Current IC (mA) Noise Figure vs. Collector Current 5 Noise Figure NF (dB) VCE = 5 V f = 900 MHz 4 3 2 1 0 1 4 2 5 10 20 Collector Current IC (mA) 50 50 2SC4422 S Parameters (Emitter Common) Test Condition VCE = 5 V, 100 MHz to 1000 MHz (100 MHz Step), ZO = 50 Ω IC = 5 mA IC = 10 mA S11-Frequency 0.8 1 0.6 1.5 2 0.4 3 4 5 0.2 10 0.2 0 0.4 0.6 1 1.5 2 3 45 10 ∞ –10 –0.2 –5 –4 –3 –0.4 –2 –0.6 –0.8 –1 –1.5 S21-Frequency 90° 120° Scale : 10/div 60° 150° 30° –180° 0° –30° –150° –60° –120° –90° 5 2SC4422 S12-Frequency 90° Scale : 0.1/div 60° 120° 150° 30° –180° 0° –30° –150° –60° –120° –90° S22-Frequency 0.8 1 0.6 1.5 2 0.4 3 4 5 0.2 10 0.2 0 0.4 0.6 0.81 1.5 2 3 45 10 ∞ –10 –0.2 –5 –4 –3 –0.4 –2 –0.6 –0.8 6 –1 –1.5 2SC4422 S Parameters (Emitter Common) Test Condition VCE = 5 V, IC = 5 mA, ZO = 50 Ω Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 100 0.747 –42.0 12.471 143.1 0.044 69.5 0.840 –24.6 200 0.534 –70.3 8.958 119.9 0.071 62.3 0.640 –36.3 300 0.394 –91.0 6.624 106.1 0.090 61.2 0.522 –40.4 400 0.310 –105.3 5.194 96.8 0.108 62.5 0.456 –42.4 500 0.258 –117.0 4.280 89.7 0.126 64.1 0.417 –43.7 600 0.216 –126.9 3.636 84.0 0.145 65.1 0.391 –45.4 700 0.193 –139.0 3.170 79.0 0.165 65.9 0.376 –47.5 800 0.167 –149.6 2.824 74.5 0.185 66.5 0.368 –50.0 900 0.157 –162.3 2.543 70.2 0.206 66.9 0.363 –53.1 1000 0.136 –171.9 2.326 66.6 0.227 67.0 0.362 –56.3 Test Condition VCE = 5 V, IC = 20 mA, ZO = 50 Ω Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 100 0.333 –71.6 21.905 117.7 0.031 71.9 0.547 –37.3 200 0.192 –98.5 12.026 100.7 0.054 74.6 0.378 –37.6 300 0.135 –116.1 8.123 92.4 0.079 75.8 0.322 –35.5 400 0.107 –130.9 6.151 86.7 0.104 76.2 0.297 –35.7 500 0.088 –145.2 4.967 82.3 0.129 75.5 0.285 –36.6 600 0.078 –155.4 4.174 78.2 0.153 74.8 0.275 –38.8 700 0.069 –170.6 3.616 74.7 0.178 73.8 0.271 –42.0 800 0.060 176.2 3.201 71.1 0.203 72.8 0.268 –45.3 900 0.063 162.6 2.876 67.9 0.227 71.7 0.268 –49.3 1000 0.051 147.4 2.624 65.0 0.251 70.5 0.271 –53.5 7 2SC4422 Y Parameters (Emitter Common) Test Condition VCE = 5 V, IC = 5 mA Freq. Yie (mS) Yfe (mS) Yre (mS) Yoe (mS) (MHz) REAL IMAG. REAL IMAG. REAL IMAG. REAL IMAG. 100 1.949 3.563 147.837 –43.785 –0.001 –0.544 0.175 0.922 200 3.994 5.961 120.026 –75.352 0.005 –1.122 0.218 1.731 300 6.433 7.295 89.506 –98.131 0.006 –1.711 0.206 2.618 400 8.206 7.536 62.937 –90.892 0.017 –2.299 0.250 3.531 500 9.403 7.501 43.528 –87.146 0.043 –2.877 0.295 4.395 600 10.179 7.259 29.375 –81.334 0.058 –3.445 0.421 5.324 700 10.910 7.124 19.483 –75.831 0.098 –4.063 0.387 6.235 800 11.193 6.776 11.803 –70.096 0.127 –4.642 0.413 7.209 900 11.543 6.593 6.205 –65.171 0.192 –5.302 0.338 8.218 1000 11.387 6.328 2.208 –60.095 0.249 –5.855 0.401 9.171 Test Condition VCE = 5 V, IC = 20 mA Freq. Yie (mS) (MHz) REAL IMAG. REAL IMAG. REAL IMAG. REAL IMAG. 100 5.863 2.308 276.917 –268.988 0.000 –0.522 0.244 0.751 200 7.022 2.660 109.913 –221.759 0.005 –1.121 0.309 1.637 300 7.375 2.861 50.698 –167.756 0.006 –1.713 0.305 2.507 400 7.527 3.094 26.179 –133.425 0.024 –2.302 0.363 3.373 500 7.607 3.429 14.053 –110.501 0.025 –2.885 0.394 4.282 600 7.562 3.893 7.198 –94.442 0.056 –3.477 0.463 5.156 700 7.537 4.211 2.859 –82.874 0.079 –4.077 0.478 6.093 800 7.383 4.635 –0.221 –73.836 0.124 –4.674 0.506 7.046 900 7.403 5.047 –2.127 –67.183 0.180 –5.312 0.444 8.018 1000 7.074 5.411 –3.292 –61.241 0.246 –5.871 0.509 8.943 8 Yfe (mS) Yre (mS) Yoe (mS) Unit: mm 1.5 1.5 3.0 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max φ1 0.8 Min 1.8 Max 0.4 4.5 ± 0.1 UPAK — Conforms 0.050 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.