HITACHI 2SC4422

2SC4422
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SC4422
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
11
V
Emitter to base voltage
VEBO
2
V
Collector current
IC
50
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
15
—
—
V
I C = 10 µA, IE = 0
Collector cutoff current
I CBO
—
—
1
µA
VCB = 12 V, IE = 0
I CEO
—
—
1
µA
VCE = 10 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
1
µA
VEB = 1 V, IC = 0
DC current transfer ratio
hFE
50
—
250
Collector output capacitance
Cob
—
1.2
1.6
pF
VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
4.5
6.0
—
GHz
VCE = 5 V, IC = 20 mA
Power gain
PG
7.0
9.0
—
dB
VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
1.6
3.0
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
Note: Marking is “CR”.
2
VCE = 5 V, IC = 20 mA
2SC4422
Typical Output Characteristic
20
600
150
Collector Current IC (mA)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
400
200
125
100
12
75
8
50
IB = 25 µA
4
0
50
100
150
Ambient Temperature Ta (°C)
0
16
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Gain Bandwidth Product vs.
Collector Current
10
Gain Bandwidth Product fT (GHz)
DC Current Transfer Ratio hFE
200
VCE = 5 V
160
120
80
40
0
VCE = 5 V
8
6
4
2
0
1
2
5
10
20
Collector Current IC (mA)
50
1
2
5
10
20
Collector Current IC (mA)
50
3
2SC4422
Power Gain vs. Collector Current
20
2.0
VCE = 0
f = 900 MHz
IE = 0
f = 1 MHz
1.6
Power Gain PG (dB)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
1.2
0.8
16
12
8
4
0.4
0
0
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
1
2
5
10
20
Collector Current IC (mA)
Noise Figure vs. Collector Current
5
Noise Figure NF (dB)
VCE = 5 V
f = 900 MHz
4
3
2
1
0
1
4
2
5
10
20
Collector Current IC (mA)
50
50
2SC4422
S Parameters (Emitter Common)
Test Condition VCE = 5 V, 100 MHz to 1000 MHz (100 MHz Step), ZO = 50 Ω
IC = 5 mA
IC = 10 mA
S11-Frequency
0.8
1
0.6
1.5
2
0.4
3
4
5
0.2
10
0.2
0
0.4 0.6
1
1.5 2
3 45
10
∞
–10
–0.2
–5
–4
–3
–0.4
–2
–0.6
–0.8
–1
–1.5
S21-Frequency
90°
120°
Scale : 10/div
60°
150°
30°
–180°
0°
–30°
–150°
–60°
–120°
–90°
5
2SC4422
S12-Frequency
90°
Scale : 0.1/div
60°
120°
150°
30°
–180°
0°
–30°
–150°
–60°
–120°
–90°
S22-Frequency
0.8
1
0.6
1.5
2
0.4
3
4
5
0.2
10
0.2
0
0.4 0.6 0.81
1.5 2
3 45
10
∞
–10
–0.2
–5
–4
–3
–0.4
–2
–0.6
–0.8
6
–1
–1.5
2SC4422
S Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA, ZO = 50 Ω
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.747
–42.0
12.471
143.1
0.044
69.5
0.840
–24.6
200
0.534
–70.3
8.958
119.9
0.071
62.3
0.640
–36.3
300
0.394
–91.0
6.624
106.1
0.090
61.2
0.522
–40.4
400
0.310
–105.3
5.194
96.8
0.108
62.5
0.456
–42.4
500
0.258
–117.0
4.280
89.7
0.126
64.1
0.417
–43.7
600
0.216
–126.9
3.636
84.0
0.145
65.1
0.391
–45.4
700
0.193
–139.0
3.170
79.0
0.165
65.9
0.376
–47.5
800
0.167
–149.6
2.824
74.5
0.185
66.5
0.368
–50.0
900
0.157
–162.3
2.543
70.2
0.206
66.9
0.363
–53.1
1000
0.136
–171.9
2.326
66.6
0.227
67.0
0.362
–56.3
Test Condition VCE = 5 V, IC = 20 mA, ZO = 50 Ω
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.333
–71.6
21.905
117.7
0.031
71.9
0.547
–37.3
200
0.192
–98.5
12.026
100.7
0.054
74.6
0.378
–37.6
300
0.135
–116.1
8.123
92.4
0.079
75.8
0.322
–35.5
400
0.107
–130.9
6.151
86.7
0.104
76.2
0.297
–35.7
500
0.088
–145.2
4.967
82.3
0.129
75.5
0.285
–36.6
600
0.078
–155.4
4.174
78.2
0.153
74.8
0.275
–38.8
700
0.069
–170.6
3.616
74.7
0.178
73.8
0.271
–42.0
800
0.060
176.2
3.201
71.1
0.203
72.8
0.268
–45.3
900
0.063
162.6
2.876
67.9
0.227
71.7
0.268
–49.3
1000
0.051
147.4
2.624
65.0
0.251
70.5
0.271
–53.5
7
2SC4422
Y Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA
Freq.
Yie (mS)
Yfe (mS)
Yre (mS)
Yoe (mS)
(MHz)
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
100
1.949
3.563
147.837
–43.785
–0.001
–0.544
0.175
0.922
200
3.994
5.961
120.026
–75.352
0.005
–1.122
0.218
1.731
300
6.433
7.295
89.506
–98.131
0.006
–1.711
0.206
2.618
400
8.206
7.536
62.937
–90.892
0.017
–2.299
0.250
3.531
500
9.403
7.501
43.528
–87.146
0.043
–2.877
0.295
4.395
600
10.179
7.259
29.375
–81.334
0.058
–3.445
0.421
5.324
700
10.910
7.124
19.483
–75.831
0.098
–4.063
0.387
6.235
800
11.193
6.776
11.803
–70.096
0.127
–4.642
0.413
7.209
900
11.543
6.593
6.205
–65.171
0.192
–5.302
0.338
8.218
1000
11.387
6.328
2.208
–60.095
0.249
–5.855
0.401
9.171
Test Condition VCE = 5 V, IC = 20 mA
Freq.
Yie (mS)
(MHz)
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
REAL
IMAG.
100
5.863
2.308
276.917
–268.988
0.000
–0.522
0.244
0.751
200
7.022
2.660
109.913
–221.759
0.005
–1.121
0.309
1.637
300
7.375
2.861
50.698
–167.756
0.006
–1.713
0.305
2.507
400
7.527
3.094
26.179
–133.425
0.024
–2.302
0.363
3.373
500
7.607
3.429
14.053
–110.501
0.025
–2.885
0.394
4.282
600
7.562
3.893
7.198
–94.442
0.056
–3.477
0.463
5.156
700
7.537
4.211
2.859
–82.874
0.079
–4.077
0.478
6.093
800
7.383
4.635
–0.221
–73.836
0.124
–4.674
0.506
7.046
900
7.403
5.047
–2.127
–67.183
0.180
–5.312
0.444
8.018
1000
7.074
5.411
–3.292
–61.241
0.246
–5.871
0.509
8.943
8
Yfe (mS)
Yre (mS)
Yoe (mS)
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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