DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1757 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description Package Drawing (Unit : mm) This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 Features • Dual MOS FET chips in small package 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 • 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.) (VGS = 4.5 V, ID = 3.5 A) 0.05 Min. • Small and surface mount package (Power SOP8) 4.4 5.37 Max. 0.8 +0.10 –0.05 • Built-in G-S protection diode 6.0 ±0.3 4 0.15 Ciss = 750 pF Typ. 1.8 Max. • Low Ciss 1.44 1 RDS(on)2 = 32 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A) 1.27 0.40 0.5 ±0.2 0.10 0.78 Max. +0.10 –0.05 0.12 M Ordering information Part Number Package µ PA1757G Power SOP8 Absolute Maximum Ratings (TA = 25 °C) Drain to source voltage VDSS 20 V Gate to source voltage VGSS ±12.0 V Drain current (DC) ID(DC) ±7.0 A ID(pulse) ±28 A Drain current (pulse) Note1 Total power dissipation (1 unit) Note2 PT 1.7 W Total power dissipation (2 unit) Note2 PT 2.0 W Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 % Drain Body Diode Gate Gate Protection Diode Source 2 2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm x 1.1 mm The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. D12910EJ2V0DS00 (2nd edition) Date Published September 1998 NS CP (K) Printed in Japan © 1998 µ PA1757 Electrical Characteristics (TA = 25 °C) Characteristics Symbol Drain to source on-state resistance Test Conditions MIN. TYP. MAX. Unit RDS(on)1 VGS = 4.5 V, ID = 3.5 A 16.2 23 mΩ RDS(on)2 VGS = 2.5 V, ID = 3.5 A 22 32 mΩ Gate to source cutoff voltage VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 0.8 1.5 V Forward transfer admittance | yfs | VDS = 10 V, ID = 3.5 A 5.0 13 Drain leakage current IDSS VDS = 20 V, VGS = 0 V 10 µA Gate to source leakage current IGSS VGS = ±12.0 V, VDS = 0 V ±10 µA Input capacitance Ciss VDS = 10 V 750 pF Output capacitance Coss VGS = 0 V 420 pF 140 pF ID = 3.5 A 57 ns VGS(on) = 4.0 V 206 ns 593 ns 815 ns Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time f = 1 MHz tr Turn-off delay time VDD = 10 V td(off) Fall time RG = 10 Ω tf Total gate charge Gate to source charge Gate to drain charge QG ID = 7.0 A 13.0 nC QGS VDD = 16 V 2.6 nC 5.3 nC 0.75 V VGS = 4.0 V QGD Body diode forward voltage VF(S-D) IF = 7.0 A, VGS = 0 V Test circuit 1 Switching time Test circuit 2 Gate charge D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. VDD ID 90 % 90 % 10 % 0 10 % Wave Form τ = 1µ s Duty Cycle ≤ 1 % tr td(on) ton IG = 2 mA RL 50 Ω VDD 90 % ID τ 2 VGS(on) 10 % ID VGS 0 S td(off) tf toff µ PA1757 Typical Characteristics (TA = 25 °C) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 100 10 1 0.1 0.01 0.001 Mounted on ceramic substrate of 2000mm 2 x 1.1mm Single Pulse , 1 unit 10µ 100 µ 1m 10 m 100 m 1 10 100 1 000 100 VDS=10V Pulsed TA=-50˚C -25˚C 10 TA=25˚C 75˚C 150˚C 1 0.1 1 10 100 RDS(on) - Drain to Source On-State Resistance - mΩ ID- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 75 Pulsed 50 ID=3.5A 25 0 Pulsed 60 40 VGS=2.5V 20 VGS=4.5V 0 1 10 ID - Drain Current - A 100 2 4 8 6 10 12 14 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - mW PW - Pulse Width - S VDS = 10 V ID = 1 mA 1.0 0.5 0 - 50 0 50 100 150 Tch - Channel Temperature -˚C 3 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 40 IF - Diode Forward Current - A VGS=2.5V 30 VGS=4.5V 20 10 100 VGS=2.5V VGS=0 10 1 0.1 ID= 3.5A 0 - 50 0 50 100 0 150 Tch - Channel Temperature -˚C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1 000 VGS = 0 f = 1 MHz td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 1000 Ciss Coss 100 10 0.1 Crss 1 10 100 trr - Reverse Recovery Time - ns 100 10 10 IF - Diode Current - A 4 100 VDS - Drain to Source Voltage - V di/dt =100A/µ s VGS = 0 1 tf td(on) 100 10 1 0.1 VDD =10V VGS(on) = 4V RG =10Ω 10 100 1 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 tr td(off) VDS - Drain to Source Voltage - V 1 000 1.5 1.0 0.5 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 8 40 ID=7.0A 30 VGS VDD=16V 10V 4V 6 20 4 10 2 VDS 0 4 8 12 QG - Gate Charge - nC 0 16 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - mΩ µ PA1757 µ PA1757 80 60 40 20 20 40 60 80 100 120 140 160 PT - Total Power Dissipation - W/package 100 0 2.8 Mounted on ceramic substrate of 2000mm 2 x 1.1mm 2.4 2.0 2 unit 1 unit 1.6 1.2 0.8 0.4 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 d ite im 5V) . )L on =4 S( ID - Drain Current - A TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on ceramic substrate of 2000mm x 1.1mm21 unit ID(pulse) 1 S RD t VG (a 10 m s 10 ID(DC) m s 10 0m s Po we 1 DC rD iss ipa tio n VGS=4.5V 20 15 2.5V 10 5 Lim ite TA = 25 ˚C Single Pulse 0.1 0.1 Pulsed 25 ID - Drain Current - A dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA d 1 10 100 VDS - Drain to Source Voltage - V 0 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 Pulsed 10 TA=150˚C 125˚C 1 75˚C TA=25˚C -25˚C -50˚C 0.1 VDS=10V 0 1 2 3 4 VGS - Gate to Source Voltage - V 5 µ PA1757 [MEMO] 6 µ PA1757 [MEMO] 7 µ PA1757 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5