DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3481 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3481 TO-220AB 2SK3481-S TO-262 2SK3481-ZJ TO-263 2SK3481-Z TO-220SMDNote designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) Note TO-220SMD package is produced only RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) in Japan. • Low Ciss: Ciss = 2300 pF TYP. (TO-220AB) • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 100 V = 0 V) VGSS ±20 V ID(DC) ±30 A ID(pulse) ±60 A Total Power Dissipation (TC = 25°C) PT1 56 W = 25°C) PT2 1.5 W Tch 150 °C Gate to Source Voltage (VDS Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TA Channel Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 26 A Single Avalanche Energy Note2 EAS 68 mJ Storage Temperature (TO-262) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% (TO-263, TO-220SMD) 2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 2.23 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15063EJ1V0DS00 (1st edition) Date Published January 2002 NS CP(K) Printed in Japan © 2002 2SK3481 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA 2.5 V Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 | yfs | VDS = 10 V, ID = 15 A 9 18 RDS(on)1 VGS = 10 V, ID = 15 A 40 50 mΩ RDS(on)2 VGS = 4.5 V, ID = 15 A 44 58 mΩ S Input Capacitance Ciss VDS = 10 V 2300 pF Output Capacitance Coss VGS = 0 V 230 pF Reverse Transfer Capacitance Crss f = 1 MHz 120 pF Turn-on Delay Time td(on) VDD = 50 V, ID = 15 A 13 ns VGS = 10 V 10 ns RG = 0 Ω 53 ns 5.0 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 80 V 48 nC Gate to Source Charge QGS VGS = 10 V 7.0 nC Gate to Drain Charge QGD ID = 30 A 12 nC VF(S-D) IF = 30 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 30 A, VGS = 0 V 70 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 160 nC Body Diode Forward Voltage TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D15063EJ1V0DS tr td(off) td(on) ton tf toff 2SK3481 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 20 40 60 80 100 120 140 40 30 20 10 0 160 0 20 TC - Case Temperature - ˚C 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) µs 1 s m n io at ip R (a DS( t V on) G L S i = mit 10 ed V) 0 s iss rD we ed Po imit L 1 TC = 25˚C Single Pulse 0.1 1 0.1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A µs m 10 10 DC 10 10 ID(DC) 100 Rth(ch-A) = 83.3˚C/W 10 1 Rth(ch-C) = 2.23˚C/W 0.1 0.01 10 µ TC = 25˚C Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15063EJ1V0DS 3 2SK3481 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 80 Pulsed 10 ID - Drain Current - A ID - Drain Current - A 100 TTAA == −40˚C −40˚C 25˚C 25˚C 75˚C 75˚C 150˚C 150˚C 1 0.1 0.01 1 2 3 4 VDS = 10 V 5 60 VGS = 10 V 20 Pulsed 0 0 VGS - Gate to Source Voltage - V 10 TA = 150˚C 75˚C 25˚C −40˚C 0.1 0.1 1 10 100 4 2 3 ID = 30 A 40 15 A 20 00 5 10 15 20 VGS - Gate to Source Voltage - V 4 60 VGS = 4.5 V 40 10 V 20 10 6 60 VDS = 10 V ID = 1 mA Pulsed 1 5 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 80 0 0.1 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ | yfs | - Forward Transfer Admittance - S 100 VDS = 10 V Pulsed 0.01 0.01 1 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1 4.5 V 40 100 3 2 1 0 −50 ID - Drain Current - A 0 50 100 Tch - Channel Temperature - ˚C Data Sheet D15063EJ1V0DS 150 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 120 100 Pulsed ISD - Diode Forward Current - A 100 80 VGS = 4.5 V 60 10 V 40 20 ID = 15 A 0 −50 50 0 100 Pulsed 10 VGS = 10 V 0.1 0.01 150 0 1.5 SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switching Time - ns 10000 Ciss, Coss, Crss - Capacitance - pF 1.0 0.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss 1000 Coss 100 Crss VGS = 0 V f = 1 MHz 10 0.01 0.1 1 10 100 100 td(off) td(on) 10 tr tf VDD = 50 V VGS = 10 V RG = 0 Ω 1 0.1 VDS - Drain to Source Voltage - V 1000 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V di/dt = 100 A/ µ s VGS = 0 V 10 80 10 8 VDD = 80 V 50 V 20 V 60 VGS 6 40 4 2 20 VDS ID = 30 A 0 1 10 100 100 100 1 0.1 1 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT trr - Reverse Recovery Time - ns 0V 1 100 0 10 20 30 40 50 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3481 0 60 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D15063EJ1V0DS 5 2SK3481 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 160 100 IAS = 26 A EA S= 10 VDD = 50 V VGS = 20 → 0 V RG = 25 Ω 1 Starting Tch = 25˚C 0.001 0.01 68 mJ 120 100 80 60 40 20 0.1 1 10 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C L - Inductive Load - mH 6 VDD = 50 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 26 A 140 Energy Derating Factor - % IAS - Single Avalanche Energy - mJ 1000 Data Sheet D15063EJ1V0DS 2SK3481 PACKAGE DRAWINGS (Unit: mm) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut) φ 3.6±0.2 1.0±0.5 4.8 MAX. 10.6 MAX. 3.0±0.3 10 TYP. 1.3±0.2 4 1.3±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 3 1.3±0.2 12.7 MIN. 6.0 MAX. 1 2 3 2 1.3±0.2 8.5±0.2 4 1 4.8 MAX. 12.7 MIN. 5.9 MIN. 10.0 TYP. 15.5 MAX. 1) 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note TO-263 (MP-25ZJ) 4) TO-220SMD (MP-25Z) 4.8 MAX. 10 TYP. 4.8 MAX. 10 TYP. 1.3±0.2 1.3±0.2 4 0.7±0.2 2.54 TYP. 2.8±0.2 2.54 TYP. R 0.5 TY R 0.8 1.4±0.2 . P TY 0.75±0.3 2.54 TYP. 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 8.5±0.2 2 3 3.0±0.5 1.4±0.2 1 P. P. . TY R TYP 5 . 0 R .8 2.54 TYP. 0 2.8±0.2 3 1.1±0.4 8.5±0.2 2 5.7±0.4 1 1.0±0.5 4 1.0±0.5 3) 2.8±0.2 2.54 TYP. 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note This package is produced only in Japan. EQUIVALENT CIRCUIT Remark Drain The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Body Diode Gate Gate Protection Diode exceeding the rated voltage may be applied to this device. Source Data Sheet D15063EJ1V0DS 7 2SK3481 • The information in this document is current as of January, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4