2SC5124 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) 6 V IC 10(Pulse20) A IB 5 A PC 100(Tc=25°C) W Tj 150 °C –55 to +150 °C Tstg V V MHz pF 0.8±0.2 1.75 1.05 +0.2 -0.1 1.5 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 33.3 6 10 –5 1.2 –2.4 0.1typ 4.0typ 0.2typ I C – V CE Characteristics (Typical) VCE(sat)–IC Characteristics (Typical) A 1. 8A Collector Current I C (A) 8 1. 2A 6 700 mA 4 300 mA 2 0 I B =100mA 0 1 2 3 0.65 +0.2 -0.1 5.45±0.1 4.4 3.35 1.5 C Weight : Approx 6.5g a. Type No. b. Lot No. E I C – V BE Temperature Characteristics (Typical) (V CE =5V) 10 I C / I B =5:1 Collector Current I C (A) 2.4 B 3 Collector-Emitter Saturation Voltage V C E (s at) (V ) 10 0.8 2.15 ■Typical Switching Characteristics (Common Emitter) RL (Ω) 3.45 ±0.2 ø3.3±0.2 a b 5.45±0.1 VCC (V) 5.5±0.2 3.0 VEBO 15.6±0.2 5.5 V Unit µA mA µA V 100max 1max 100max 800min 8min 4 to 9 5max 1.5max 3typ 130typ 1.6 800 2SC5124 Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCE=12V, IE=–1A VCB=10V, f=1MHz 3.3 VCEO Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB 9.5±0.2 V 23.0±0.3 Unit 1500 External Dimensions FM100(TO3PF) (Ta=25°C) 19.1 16.2 2SC5124 VCBO Symbol Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) 2 1 8 6 4 2 0 0.02 4 0.05 0.1 Collector-Emitter Voltage V C E (V) 0.5 1 5 0 10 0 0.5 h FE – I C Characteristics (Typical) 1.0 Base-Emittor Voltage V B E (V) Collector Current I C (A) θ j-a – t Characteristics t stg •t f – I C Characteristics (Typical) (V C E =5V) 10 t o n• t s tg • t f (µ s) 125˚C 25˚C Switching Ti me DC Curr ent Gain h FE 40 –55˚C 10 5 3 0.02 0.1 0.5 1 5 10 t s tg 5 V C C 200V I C :I B 1 :–I B 2 =5:1:2 1 0.5 tf 0.1 0.2 0.5 1 5 10 Collector Current I C (A) Collector Current I C (A) Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 30 30 100 0µ 10 500 Collector-Emitter Voltage V C E (V) 128 1000 0.1 50 100 500 1000 Collector-Emitter Voltage V C E (V) 2000 nk 100 si 50 50 at 10 he 5 Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% ite 0.1 0.5 fin 0.5 1 In 1 5 ith Co lle ctor Cu rre nt I C (A) s 5 W Maximu m Power Dissipa tion P C (W) 10 10 Collector Curre nt I C ( A) P c – T a Derating 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150