Inchange Semiconductor Product Specification MJE18002 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220 package ・High voltage ,high speed APPLICATIONS ・Designed for use in 220V line-operated switchmode power supplies and electronic light ballast PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 2 A ICM Collector current-Peak 5 A IB Base current 0.5 A IBM Base current-Peak 1.0 A PD Total power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT TC=25℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance junction to case 1.25 ℃/W Rth j-A Thermal resistance junction to ambient 62.5 ℃/W Inchange Semiconductor Product Specification MJE18002 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; L=25mH VCEsat-1 Collector-emitter saturation voltage IC=0.4A ;IB=40mA TC=125℃ 0.5 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=1A ;IB=0.2A TC=125℃ 0.5 0.6 V VBEsat-1 Base-emitter saturation voltage IC=0.4A ;IB=40mA 1.1 V VBEsat-2 Base-emitter saturation voltage IC=1A ;IB=0.2A 1.25 V ICES Collector cut-off current CONDITIONS MIN TYP. MAX 450 UNIT V 0.1 VCES=RatedVCES; VEB=0 0.5 mA TC=125℃ VCES=800V 0.1 ICEO Collector cut-off current VCE=RatedVCEO; IB=0 0.1 mA IEBO Emitter cut-off current VEB=9V; IC=0 0.1 mA hFE-1 DC current gain IC=0.2A ; VCE=5V 14 hFE-2 DC current gain IC=0.4A ; VCE=1V 11 hFE-3 DC current gain IC=1A ; VCE=1V 6 hFE-4 DC current gain IC=10mA ; VCE=5V 10 Transition frequency IC=0.5A ; VCE=10V;f=1.0MHz 6.5 MHz Collector outoput capacitance IE=0 ; VCB=10V;f=1.0MHz 35 pF fT COB 34 Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs ton Turn-on time toff Turn-off time ton Turn-on time toff Turn-off time VCC=300V ,IC=0.4A IB1=40mA; IB2=0.2A VCC=300V ,IC=1.0A IB1=0.2A; IB2=0.5A 2 200 300 ns 1.2 2.5 μs 85 150 ns 1.7 2.5 μs Inchange Semiconductor Product Specification MJE18002 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3