Inchange Semiconductor Product Specification MJF18006 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220F package ・High voltage ,high speed APPLICATIONS ・Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 6 A ICM Collector current-Peak 15 A IB Base current 4 A IBM Base current-Peak 8 A PD Total power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT TC=25℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance junction to case 3.12 ℃/W Rth j-A Thermal resistance junction to ambient 62.5 ℃/W Inchange Semiconductor Product Specification MJF18006 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage VCEsat-1 Collector-emitter saturation voltage VCEsat-2 Collector-emitter saturation voltage VBEsat-1 VBEsat-2 ICES CONDITIONS IC=0.1A; L=25mH MIN TYP. MAX 450 UNIT V IC=1.5A ;IB=0.15A TC=125℃ IC=3A ;IB=0.6A TC=125℃ 0.6 0.65 0.7 0.8 Base-emitter saturation voltage IC=1.5A; IB=0.15A 1.2 V Base-emitter saturation voltage IC=3A; IB=0.6A 1.3 V Collector cut-off current V V 0.1 VCES=RatedVCES; VEB=0 0.5 mA TC=125℃ VCES=800V 0.1 ICEO Collector cut-off current VCE=RatedVCEO; IB=0 0.1 mA IEBO Emitter cut-off current VEB=9V; IC=0 0.1 mA hFE-1 DC current gain IC=0.5A ; VCE=5V 14 hFE-2 DC current gain IC=3A ; VCE=1V 6 hFE-3 DC current gain IC=1.5A ; VCE=1V 11 hFE-4 DC current gain IC=10mA ; VCE=5V 10 Transition frequency IC=0.5A ; VCE=10V;f=1.0MHz 14 MHz Collector outoput capacitance IE=0 ; VCB=10V;f=1.0MHz 75 pF fT COB 34 Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs ton Turn-on time toff Turn-off time ton Turn-on time toff Turn-off time VCC=300V ,IC=3A IB1=0.6A; IB2=1.5A VCC=300V ,IC=1.3A IB1=0.13A; IB2=0.65A 2 90 180 ns 1.7 2.5 μs 0.2 0.3 μs 1.2 2.5 μs Inchange Semiconductor Product Specification MJF18006 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3