Inchange Semiconductor Product Specification 2SC5241 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2 A IBM Base current-peak 4 A PT Total power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 4.16 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SC5241 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=2.5A ; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A ; IB=0.5A 1.5 V ICBO Collector cut-off current Rated VCBO 0.1 mA ICEO Collector cut-off current Rated VCEO 0.1 mA IEBO Emitter cut-off current Rated VEBO 0.1 mA hFE-1 DC current gain IC=2.5A ; VCE=5V 10 hFE-2 DC current gain IC=1mA ; VCE=5V 5 Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS MIN TYP. MAX 450 UNIT V 20 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=2.5A; IB1=0.5A IB2=1A VBB2=4V ,RL=60Ω 2 0.5 μs 2.0 μs 0.2 μs Inchange Semiconductor Product Specification 2SC5241 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3