JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8550 TRANSISTOR （ PNP ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : -1 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 2. BASE 3. COLLECTOR 1 2 3 unless Test otherwise conditions specified） MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μA ， IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO* IC= -0.1mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA， IC=0 -6 V Collector cut-off current ICBO VCB= -35V , IE=0 -0.1 μA Collector cut-off current ICEO VCE= -20V , IB=0 -0.1 μA hFE(1) VCE=-1V, IC=-5mA 45 hFE(2) VCE=-1V, IC=-100mA 85 hFE（3） VCE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) IC= -800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80m A -1.2 V DC current gain Transition frequency fT VCE=-6V, IC= -20mA f=30MHz * Pulse Test ：pulse width ≤ 300µs，duty cycle ≤2%。 150 300 MHz