Inchange Semiconductor Product Specification 2SA1209 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC2911 ·High breakdown voltage ·Fast switching speed APPLICATIONS ·High-voltage switching and AF 100W predriver applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -0.14 A ICM Collector current-Peak -0.20 A PC Collector power dissipation Ta=25℃ 1.0 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SA1209 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage ICBO CONDITIONS MIN TYP. MAX UNIT IC=-50mA; IB=-5mA -0.4 V Collector cut-off current VCB=-80V; IE=0 -0.1 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 μA hFE DC current gain IC=-10mA ; VCE=-5V fT Transition frequency IC=-10mA ; VCE=-10V 150 MHz Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 4.0 pF 0.1 μs 1.5 μs 0.1 μs 100 400 Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=10mA IB1=-IB2=1mA hFE Classifications R S T 100-200 140-280 200-400 2 Inchange Semiconductor Product Specification 2SA1209 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA1209 Silicon PNP Power Transistors 4