Transistors IC SMD Type Silicon NPN Epitaxial 2SC2715 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Recommended for FM IF, OSC stage and AM CONV. IF stage. 1 0.55 High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 50 mA Base current IB 10 mA Collector power dissipation PC 150 mW Junction temperature Storage temperature range Tj 125 Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 35 V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 4 V, IC = 0 0.1 ìA DC current gain hFE VCE = 12 V, IC = 2 mA 40 240 VCE (sat) IC = 10 mA, IB = 1 mA Collector-emitter saturation voltage Base-emitter voltage VBE IC = 10 mA, IB = 1 mA Transition frequency fT VCE = 10V, IC = 1 mA Collector output capacitance Cob 100 VCB = 10 V, IE = 0 , f = 1 MHz 2 Cc.rbb' VCE = 10V, IE = -1 mA , f = 30 MHz Collector-base time constant Power gain Gpe VCC = 6V, IE = -1 mA , f = 10.7 MHz 27 30 0.4 V 1 V 400 MHz 3.2 pF 50 ps 33 dB hFE Classification R Marking Rank R O Y hFE 40 80 70 140 120 240 www.kexin.com.cn 1