Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-1000 amplifiers in industrial and military systems. Features • High Output Power: +27 dBm Typical P1dB at 1.0␣ GHz 3 • Low Distortion: 37 dBm Typical IP3 at 1.0␣ GHz • 8.5 dB Typical Gain at 1.0␣ GHz • Impedance Matched to 25 Ω for Push-Pull Configurations Description The MSA-1000 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use in a push-pull configuration in a 25␣ Ω system. The MSA-1000 can also be used as single-ended amplifier in a 50␣ Ω system with slightly reduced performance. Typical applications include narrow and broadband RF The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. VCC > 20 V 4 C block MSA 3 2 Vd = 15 V 2 1 50 Ω OUT 3 MSA C block C block 4 RFC VCC > 20 V CFbl 5965-9553E 2 2 2 Note: 1. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information. RFC 1 AK This chip is intended to be used with an external blocking capacitor completing the shunt feedback R bias 50 Ω 2 path (closed loop). Data sheet characterization is given for a 80␣ pF capacitor. Low frequency performance can be extended by using a larger valued capacitor.[1] CFbl IN 4 1 The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire. Typical Push-Pull Biasing Configuration C block Chip Outline[1] R bias 6-442 MSA-1000 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 425 mA 7.0 W +25 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 10°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting␣ Surface (TMS) = 25°C. 3. Derate at 100 mW/°C for TMounting␣ Surface > 130°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions[2]: Id = 325 mA, ZO = 25 Ω Units Min. Typ. GP Power Gain (|S21| 2) f = 1.0 GHz dB 8.5 ∆GP Gain Flatness f = 0.1 to 2.0 GHz dB ± 0.6 f3 dB 3 dB Bandwidth[3] GHz Input VSWR VSWR 2.6 f = 0.1 to 2.0 GHz Output VSWR f = 0.1 to 2.0 GHz NF 25 Ω Noise Figure f = 1.0 GHz Max. 2.0:1 2.5:1 dB 7.0 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 27.0 IP3 Third Order Intercept Point f = 1.0 GHz dBm 37.0 tD Group Delay f = 1.0 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 175 13.5 15.0 –18.0 Notes: 1. The recommended operating current range for this device is 150 to 400 mA. Typical performance as a function of current is on the following page. 2. RF performance of the chip is determined by packaging and testing 10 devices per wafer. 3. Referenced from 0.1 GHz gain (G P). Part Number Ordering Information Part Number MSA-1000-GP4 Devices Per Tray 100 6-443 16.5 MSA-1000 Typical Scattering Parameters[1,2] (Z = 50 Ω, TA = 25°C, Id = 325 mA) S11 S21 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 0.001 0.005 0.010 0.050 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000 .41 .52 .54 .54 .55 .55 .54 .52 .51 .50 .48 .47 .46 .46 .48 .56 .61 –121 –167 –174 –179 179 178 176 174 174 172 173 175 178 179 –177 –170 –171 15.5 8.7 7.7 7.3 7.2 7.2 7.2 7.2 7.2 7.2 7.2 7.1 6.8 6.4 6.0 4.4 2.7 5.95 2.73 2.41 2.31 2.30 2.30 2.29 2.30 2.29 2.29 2.28 2.26 2.20 2.09 1.99 1.65 1.36 149 156 166 174 173 168 157 146 134 121 108 96 83 62 56 35 12 –17.7 –15.7 –15.6 –15.7 –15.7 –15.7 –15.7 –15.8 –15.8 –15.9 –16.0 –16.2 –16.3 –16.5 –16.6 –17.0 –16.7 .130 .164 .166 .165 .165 .165 .165 .163 .161 .160 .158 .155 .153 .150 .148 .141 .147 22 6 3 1 –1 –1 –3 –4 –5 –5 –6 –7 –7 –8 –10 –1 1 .43 .48 .46 .46 .46 .47 .48 .48 .48 .49 .49 .50 .51 .53 .65 .54 .69 –99 –161 –171 –178 –179 177 176 174 173 172 172 174 175 176 –179 178 –176 0.68 1.02 1.12 1.17 1.17 1.16 1.16 1.16 1.15 1.12 1.10 1.05 1.00 0.94 0.68 .91 .52 Notes: 1. S-parameters are de-embedded from 100 mil BeO package measured data using the package model found in the DEVICE MODELS section. 2. S-parameter data assumes an external 80 pF capacitor. Low frequency performance can be extended using a larger valued capacitor. 6-444 Typical Performance, TA = 25°C (unless otherwise noted) 10 IP3 (dBm) 8 36 30 IP3 P1 dB (dBm) 28 32 6 1.0 GHz 2.0 GHz 4 28 1.5 GHz P1 dB (dBm) GAIN (dB) 32 40 0.5 GHz 2 0 16 18 20 22 24 26 28 30 P1 dB 24 26 1.0 GHz 24 1.0 GHz, 4.0 GHz 22 2.0 GHz 20 150 32 0.5 GHz 200 250 300 350 20 –50 400 +25 +100 POWER OUT (dBm) I d (mA) TEMPERATURE (°C) Figure 1. Typical Gain vs. Power Out, ZO = 25 Ω, Id = 325 mA. Figure 2. Output Power at 1 dB Gain Compression, Third Order Intercept Point vs. Current, ZO = 25 Ω, f=1.0GHz. Figure 3. Output Power at 1 dB Gain Compression vs. Case Temperature, ZO = 25 Ω, Id = 325 mA. 20 GAIN (dB) 16 12 ZO = 50 Ω 8 4 Closed Loop Open Loop 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 FREQUENCY (GHz) Figure 4. Gain vs. Frequency, Id = 325 mA. MSA-1000 Bonding Diagram MSA-1000 Chip Dimensions Capacitor (80 pF typ) Input Trace 3 Output Trace MSA Die 2 2 1 4 2 2 3 4 1 495 µm 19.5 mil (backside contact) A10 2 Ground Numbers refer to pin contacts listed on the Chip Outline. AK 2 2 2 917 µm 36.1 mil Unless otherwise specified, tolerances are ±13 µm/±0.5 mils. Chip thickness is 114 µm/4.5 mil. Bond Pads are 41 µm/1.6 mil typical on each side. Note 1: Output contact is made by die attaching the backside of the die. 6-445