SMD Type Product specification FDV301N General Description Features This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors with one DMOS FET. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOIC-16 SOT-223 Mark:301 INVERTER APPLICATION Vcc D D OUT IN G Absolute Maximum Ratings Symbol G S GND S TA = 25oC unless other wise noted Parameter FDV301N Units VDSS, VCC Drain-Source Voltage, Power Supply Voltage 25 V VGSS, VI Gate-Source Voltage, VIN 8 V ID, IO Drain/Output Current 0.22 A - Continuous 0.5 PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) 0.35 W -55 to 150 °C 6.0 kV 357 °C/W THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient http://www.twtysemi.com 4008-318-123 1 of 2 SMD Type Product specification FDV301N Inverter Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Max Units IO (off) Zero Input Voltage Output Current VCC = 20 V, VI = 0 V 1 µA VI (off) Input Voltage VCC = 5 V, IO = 10 µA 0.5 V Output to Ground Resistance VI = 2.7 V, IO = 0.2 A VI (on) RO (on) Min VO = 0.3 V, IO = 0.005 A Typ 1 V 4 5 Ω Typ Max Units Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min 25 OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V IGSS Gate - Body Leakage Current VGS = 8 V, VDS= 0 V V TJ = 55°C ON CHARACTERISTICS mV / oC 25 1 µA 10 µA 100 nA (Note) ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(ON) Static Drain-Source On-Resistance VGS = 2.7 V, ID = 0.2 A mV / oC -2.1 0.65 TJ =125°C VGS = 4.5 V, ID = 0.4 A 0.85 1.5 V Ω 3.8 5 6.3 9 3.1 4 ID(ON) On-State Drain Current VGS = 2.7 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID= 0.4 A 0.2 0.2 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz 9.5 pF 6 pF 1.3 pF S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω VDS = 5 V, ID = 0.2 A, VGS = 4.5 V 3.2 8 ns 6 15 ns 3.5 8 ns 3.5 8 ns 0.49 0.7 nC 0.22 nC 0.07 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.29 A (Note) 0.8 0.29 A 1.2 V Note: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. http://www.twtysemi.com 4008-318-123 2 of 2