APT26GU30B
APT26GU30B
TYPICAL PERFORMANCE CURVES
300V
POWER MOS 7 IGBT
®
TO-247
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
G
• SSOA rated
C
E
C
• Low Gate Charge
G
• Ultrafast Tail Current shutoff
E
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
VCES
Collector-Emitter Voltage
300
VGE
Gate-Emitter Voltage
±20
VGEM
Gate-Emitter Voltage Transient
±30
IC1
Continuous Collector Current @ TC = 25°C
47
IC2
Continuous Collector Current @ TC = 100°C
26
ICM
Pulsed Collector Current
SSOA
PD
TJ,TSTG
TL
UNIT
APT26GU30B
1
Volts
Amps
85
@ TC = 150°C
85A @ 300V
Switching Safe Operating Area @ TJ = 150°C
187
Total Power Dissipation
Watts
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
300
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
TYP
MAX
4.5
6
Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 25°C)
1.5
2.0
Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 125°C)
1.5
3
(VCE = VGE, I C = 1mA, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
250
2
Gate-Emitter Leakage Current (VGE = ±20V)
Volts
µA
2500
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
nA
4-2004
MIN
Rev B
Characteristic / Test Conditions
050-7459
Symbol
APT26GU30B
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
1200
VGE = 0V, VCE = 25V
120
Reverse Transfer Capacitance
f = 1 MHz
6
Gate-to-Emitter Plateau Voltage
Gate Charge
VGE = 15V
7.0
VCE = 150V
8
10
Input Capacitance
Coes
Output Capacitance
Cres
VGEP
Qge
TYP
Capacitance
Cies
Qg
MIN
Total Gate Charge
3
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
I C = 13A
SSOA
Switching Safe Operating Area
TJ = 150°C, R G = 5Ω, VGE =
MAX
UNIT
pF
V
37
nC
85
A
15V, L = 100µH,VCE = 300V
td(on)
tr
td(off)
tf
Turn-on Delay Time
Current Rise Time
Eoff
Turn-off Switching Energy
td(on)
Turn-on Delay Time
48
6
Inductive Switching (125°C)
VCC = 200V
11
VGE = 15V
70
Turn-off Delay Time
14
I C = 13A
Current Fall Time
Turn-on Switching Energy (Diode)
Eoff
Turn-off Switching Energy
5
ns
100
R G = 20Ω
4
Eon2
µJ
60
Current Rise Time
Turn-on Switching Energy
TBD
TJ = +25°C
5
ns
55
R G = 20Ω
4
Turn-on Switching Energy (Diode)
Eon1
60
14
I C = 13A
Eon2
tf
VGE = 15V
Current Fall Time
Turn-on Switching Energy
td(off)
11
Turn-off Delay Time
Eon1
tr
Inductive Switching (25°C)
VCC = 200V
TBD
TJ = +125°C
80
µJ
95
6
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RΘJC
Junction to Case (IGBT)
0.67
RΘJC
Junction to Case (DIODE)
N/A
Package Weight
5.9
WT
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
050-7459
Rev B
4-2004
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TYPICAL PERFORMANCE CURVES
TC = 125°C
20
TC = 25°C
10
0
FIGURE 1, Output Characteristics(VGE = 15V)
100
TJ = 25°C
TJ = 125°C
0
3
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
2.5
IC = 26A
2
IC = 13A
1.5
IC = 6.5A
1
0.5
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
6
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
TC=125°C
20
10
14
0
1
2
3
4
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC = 13A
TJ = 25°C
VCE = 60V
12
VCE = 150V
10
8
VCE = 240V
6
4
2
0
2
4
6
8
10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
20
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = -55°C
40
VGE, GATE-TO-EMITTER VOLTAGE (V)
60
TC=25°C
30
FIGURE 2, Output Characteristics (VGE = 10V)
16
0
5
10
15
20
25
30
GATE CHARGE (nC)
FIGURE 4, Gate Charge
35
40
2.5
IC = 26A
2.0
IC = 13A
1.5
IC = 6.5A
1.0
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
70
IC, DC COLLECTOR CURRENT(A)
IC, COLLECTOR CURRENT (A)
80
TC=-55°C
40
0
0
1
2
3
4
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
60
50
40
30
4-2004
TC = -55°C
30
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
20
10
0
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
Rev B
IC, COLLECTOR CURRENT (A)
40
IC, COLLECTOR CURRENT (A)
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
APT26GU30B
60
050-7459
60
tr, RISE TIME (ns)
td (OFF), TURN-OFF DELAY TIME (ns)
12
VGE= 15V
10
8
6
4
VCE = 400V
TJ = 25°C, TJ =125°C
RG = 20Ω
L = 100 µH
2
0
30
20
VCE = 200V
RG = 20Ω
L = 100 µH
10
100
20
80
15
TJ = 25 or 125°C,VGE = 15V
10
RG = 20Ω, L = 100µH, VCE = 200V
60
TJ = 25°C, VGE = 15V
40
0
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
250
VCE = 200V
VGE = +15V
Ω
RG = 20Ω
200
TJ = 125°C,VGE =15V
150
100
50
TJ = 25°C,VGE =15V
0
Eoff, 26A
TJ = 125°C
200
Eon2, 26A
150
Eoff, 13A
100
Eon2, 13A
50
Eoff, 6.5A
Eon2, 6.5A
0
TJ = 125°C, VGE = 15V
150
100
50
TJ = 25°C, VGE = 15V
250
VCE = 200V
VGE = +15V
250
200
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (µJ)
300
VCE = 200V
VGE = +15V
Ω
RG = 20Ω
0
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
0
TJ = 125°C, VGE = 15V
20
EOFF, TURN OFF ENERGY LOSS (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
40
25
250
SWITCHING ENERGY LOSSES (µJ)
VGE =15V,TJ=25°C
50
0
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
4-2004
60
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
RG = 20Ω, L = 100µH, VCE = 200V
0
Rev B
VGE =15V,TJ=125°C
70
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
30
5
050-7459
APT26GU30B
80
tf, FALL TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
14
VCE = 200V
VGE = +15V
Ω
RG = 20Ω
Eoff,26A
200
150
Eon2,26A
100
Eoff, 13A
Eon2,13A
50
Eoff, 6.5A
Eon2,6.5A
0
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
1,000
Cies
80
P
Coes
100
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE ( F)
500
50
10
1
APT26GU30B
100
2,000
Cres
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
60
40
20
0
0
50
100 150 200 250 300 350
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.9
0.60
0.50
0.7
0.40
0.5
0.30
Note:
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.70
0.3
0.20
t1
t2
0.10
0
Duty Factor D = t1/t2
0.1
10-5
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
0.05
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
300
RC MODEL
0.0860
0.0342F
0.432F
Case temperature(°C)
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
Fmax = min(f max1 , f max 2 )
50
10
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 200V
RG = 20Ω
5
f max1 =
0.05
t d (on ) + t r + t d(off ) + t f
f max 2 =
Pdiss − Pcond
E on 2 + E off
Pdiss =
10
15 20 25
30
35
40 45
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ − TC
R θJC
4-2004
0.391
100
Rev B
Power
(watts)
0.00537F
050-7459
0.192
FMAX, OPERATING FREQUENCY (kHz)
Junction
temp (°C)
APT26GU30B
APT15DS30
Gate Voltage
10%
TJ = 125°C
td(on)
IC
V CC
tr
V CE
Drain Current
90%
10%
5%
A
D.U.T.
5%
DrainVoltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
*DRIVER SAME TYPE AS D.U.T.
90%
Gate Voltage
A
td(off)
V CE
DrainVoltage
tf
IC
100uH
V CLAMP
90%
10%
Switching Energy
0
A
Drain Current
DRIVER*
Figure 24, EON1 Test Circuit
Figure 23, Turn-off Switching Waveforms and Definitions
T0-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Collector
4-2004
Rev B
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
050-7459
B
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
D.U.T.