NSL12AW High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size 12 VOLTS 3.0 AMPS PNP TRANSISTOR Benefits: • High Specific Current and Power Capability Reduces Required PCB Area • Reduced Parasitic Losses Increases Battery Life COLLECTOR 1, 2, 5, 6 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO –12 Vdc Collector-Base Voltage VCBO –12 Vdc Emitter-Base Voltage VEBO –5.0 Vdc Collector Current – Continuous Collector Current – Peak IC ICM –2.0 –3.0 Adc Electrostatic Discharge ESD 3 BASE 4 EMITTER 6 1 Characteristic Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25°C Derate above 25°C Symbol Max Unit PD (Note 1) 450 mW 3.6 mW/°C 275 °C/W RθJA (Note 1) 2 3 CASE 419B SOT–363/SC–88 STYLE 20 DEVICE MARKING PD (Note 2) 650 mW 5.2 mW/°C Thermal Resistance, Junction to Ambient RθJA (Note 2) 192 °C/W Thermal Resistance, Junction to Lead 6 RθJL 105 °C/W PD Single 1.4 W TJ, Tstg –55 to +150 °C Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range Semiconductor Components Industries, LLC, 2002 11d 11 = Specific Device Code d = Date Code ORDERING INFORMATION Device 1. FR–4, Minimum Pad, 1 oz Coverage 2. FR–4, 1″ Pad, 1 oz Coverage April, 2002 – Rev. 1 4 HBM Class 3 MM Class C THERMAL CHARACTERISTICS Total Device Dissipation TA = 25°C Derate above 25°C 5 NSL12AWT1 1 Package Shipping SOT–416 3000/Tape & Reel Publication Order Number: NSL12AW/D NSL12AW ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max –12 –15 – –12 –25 – –5.0 –7.0 – – –0.02 –0.1 – –0.03 –0.1 – –0.03 –0.1 100 100 100 180 165 160 – 300 – – – – –0.10 –0.14 –0.17 –0.160 –0.235 –0.290 – –0.84 –0.95 – –0.81 –0.95 – 100 – – 50 65 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) V(BR)CEO Collector–Base Breakdown Voltage (IC = –0.1 mAdc, IE = 0) V(BR)CBO Emitter–Base Breakdown Voltage (IE = –0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = –12 Vdc, IE = 0) ICBO Collector–Emitter Cutoff Current (VCES = –12 Vdc, IE = 0) ICES Emitter Cutoff Current (VCES = –5.0 Vdc, IE = 0) IEBO Vdc Vdc Vdc Adc Adc Adc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = –0.5 A, VCE = –1.5 V) (IC = –0.8 A, VCE = –1.5 V) (IC = –1.0 A, VCE = –1.5 V) hFE Collector–Emitter Saturation Voltage (Note 3) (IC = –0.5 A, IB = –10 mA) (IC = –0.8 A, IB = –16 mA) (IC = –1.0 A, IB = –20 mA) VCE(sat) Base–Emitter Saturation Voltage (Note 3) (IC = –1.0 A, IB = –20 mA) VBE(sat) Base–Emitter Turn–on Voltage (Note 3) (IC = –1.0 A, VCE = –1.5 V) VBE(on) Cutoff Frequency (IC = –100 mA, VCE = –5.0 V, f = 100 MHz) V V V fT Output Capacitance (VCB = –1.5 V, f = 1.0 MHz) MHz Cobo 3. Pulsed Condition: Pulse Width < 300 sec, Duty Cycle < 2% http://onsemi.com 2 pF VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) NSL12AW 0.5 0.4 2A 0.3 0.2 1A 800 mA 0.1 IC = 100 mA 500 mA 0 1 10 100 0.2 IC/IB = 100 0.1 IC/IB = 10 0 0.001 1 Figure 2. Collector Emitter Voltage versus Collector Current 1.0 VCE = 1.5 V 300 25°C TA = –55°C 0.9 TA = –55°C 0.8 0.7 25°C 0.6 0.5 125°C 0.4 VCE = 1.5 V 0.3 0 0.001 0.01 0.1 1 0.001 0.01 IC, COLLECTOR CURRENT (AMPS) 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain versus Collector Current Figure 4. Base Emitter Voltage versus Collector Current 1.0 10 0.9 IC, COLLECTOR CURRENT (A) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 0.1 0.01 Figure 1. Collector Emitter Voltage versus Base Current VBE, BASE EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 0.3 IC, COLLECTOR CURRENT (AMPS) 125°C 100 0.4 IB, BASE CURRENT (mA) 400 200 0.5 IC/IB = 10 0.8 IC/IB = 100 0.7 dc 1s 100 ms 10 ms 1 ms 1 0.1 SINGLE PULSE TA = 25°C 0.6 0.01 0.001 0.01 0.1 0.1 1 IC, COLLECTOR CURRENT (AMPS) 1 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 5. Base Emitter Saturation Voltage versus Base Current Figure 6. Safe Operating Area http://onsemi.com 3 r(t), MINIMUM PAD NORMALIZED TRANSIENT THERMAL RESISTANCE NSL12AW 1 D = 0.50 D = 0.20 0.1 D = 0.10 D = 0.05 D = 0.02 0.01 D = 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1 10 100 1000 Figure 7. Normalized Thermal Response PACKAGE DIMENSIONS SOT–363/SC–88 CASE 419B–02 ISSUE H A G 6 5 4 DIM A B C D G H J K N S –B– S 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 D 6 PL 0.2 (0.008) B M M N J C H INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 STYLE 20 PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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